April 1998

FDP7030L / FDB7030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

_________________________________________________________________________________

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol

Parameter

FDP7030L

FDB7030L

Units

DSS

Drain-Source Voltage

GSS

Gate-Source Voltage - Continuous

±20

Drain Current

- Continuous

(Note 1)

100

- Pulsed

(Note 1)

300

Total Power Dissipation @ T

= 25°C

125

Derate above 25°C

0.83

W/°C

STG

Operating and Storage Temperature Range

-65 to 175

°C

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

275

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

1.2

°C/W

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

FDP7030L Rev.D

100 A, 30 V. R

DS(ON)

= 0.007

@ V

=10 V

DS(ON)

= 0.010

@ V

=5 V

Critical DC electrical parameters specified at elevated
temperature.

Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.

High density cell design for extremely low R

DS(ON)

175°C maximum junction temperature rating.

These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency
switching circuits where fast switching, low in-line power
loss, and resistance to transients are needed.

Electrical Characteristics

= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

DRAIN-SOURCE AVALANCHE RATINGS

(Note 1)

DSS

Single Pulse Drain-Source Avalanche Energy

= 15 V, I

= 38 A

200

Maximum Drain-Source Avalanche Current

OFF CHARACTERISTICS

DSS

Drain-Source Breakdown Voltage

= 0 V, I

= 250 µA

DSS

Breakdown Voltage Temp. Coefficient

= 250 µA, Referenced to 25

mV/

DSS

Zero Gate Voltage Drain Current

= 24 V, V

= 0 V

µA

=125 °C

GSSF

Gate - Body Leakage, Forward

= 20 V, V

= 0 V

100

GSSR

Gate - Body Leakage, Reverse

= -20 V, V

= 0 V

-100

ON CHARACTERISTICS

(Note 2)

GS(th)

Gate Threshold Voltage

= V

, I

= 250 µA

1.5

GS(th)

Gate Threshold Voltage Temp.Coefficient

= 250 µA, Referenced to 25

-5

mV/

DS(ON)

Static Drain-Source On-Resistance

= 10 V, I

= 50 A

0.006

0.007

= 125°C

0.009

0.011

= 5 V, I

= 40 A

0.009

0.01

D(on)

On-State Drain Current

= 10 V, V

= 10 V

Forward Transconductance

= 10 V, I

= 50 A

DYNAMIC CHARACTERISTICS

iss

Input Capacitance

= 15 V, V

= 0 V,

f = 1.0 MHz

2150

oss

Output Capacitance

1290

rss

Reverse Transfer Capacitance

420

SWITCHING CHARACTERISTICS

(Note 2)

D(on)

Turn - On Delay Time

= 15 V, I

= 75 A,

= 10 V, R

GEN

= 6

= 10

Turn - On Rise Time

160

225

D(off)

Turn - Off Delay Time

Turn - Off Fall Time

140

195

Total Gate Charge

= 12 V

= 50 A, V

= 4.5 V

Gate-Source Charge

Gate-Drain Charge

DRAIN-SOURCE DIODE CHARACTERISTICS

Maximum Continuos Drain-Source Diode Forward Current

(Note 1)

100

Maximum Pulsed Drain-Source Diode Forward Current

(Note 2)

300

Drain-Source Diode Forward Voltage

= 0 V, I

= 50 A

(Note 2)

1.3

= 125°C

0.85

1.1

Notes
1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

FDP7030L Rev.D

FDP7030L Rev.D

Typical Electrical Characteristics

0.5

1.5

2.5

100

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

8.0

4.0

4.5

5.0

3.5

6.0

V = 10V

3.0

-50

-25

100

125

150

175

0.6

0.8

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

R , NORMALIZED

DS(ON)

V = 10V

I = 50A

1.5

2.5

3.5

4.5

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

125°C

V = 10V

T = -55°C

Figure 5. Transfer Characteristics

100

0.5

1.5

2.5

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

R , NORMALIZED

DS(ON)

4.5

5.0

10.0

4.0

6.0

8.0

V =3.5V

Figure 1. On-Region Characteristics.

0.2

0.4

0.6

0.8

1.2

1.4

0.0001

0.001

0.01

0.1

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

T = 125°C

25°C

-55°C

V =0V

0.005

0.01

0.015

0.02

0.025

V , GATE TO SOURCE VOLTAGE (V)

R , ON-RESISTANCE (OHM)

DS(ON)

125°C

25°C

I =50A

Figure 3. On-Resistance Variation

with Temperature

Figure 4. On-Resistance

Variation with

Gate-to-Source Voltage.

Figure 2. On-Resistance Variation with

Drain Current and Gate

Voltage.

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

FDP7030L Rev.D

Typical Electrical Characteristics

(continued)

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

I = 50A

V = 6.0V

24V

12V

200

500

1000

2000

3000

5000

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

f = 1 MHz
V = 0V

oss

iss

rss

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

0.1

0.5

100

300

500

V , DRAIN-SOURCE VOLTAGE (V))

I , DRAIN CURRENT (A)

100µs

1ms

10ms

100ms

R Limit

DS(ON)

10µs

V = 10V

SINGLE PULSE
R = 1.2 C/W

T = 25 °C

Figure 9. Maximum Safe Operating Area.

0.01

0.1

100

1000

2000

4000

6000

8000

SINGLE PULSE TIME (ms)

POWER (W)

SINGLE PULSE
R =1.2° C/W

T = 25°C

Figure 10. Single Pulse Maximum Power

Dissipation.

0.01

0.05

0.1

0.5

100

500

1000

0.01

0.02

0.03

0.05

0.1

0.2

0.3

0.5

t ,TIME (ms)

TRANSIENT THERMAL RESISTANCE

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R = 1.2 °C/W

T - T = P * R (t)

P(pk)

r(t), NORMALIZED EFFECTIVE

Figure 11. Transient Thermal Response Curve.

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