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Электронный компонент: FDP7045L

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FDP7045L/FDB7045L
FDP7045L/FDB7045L Rev.C
January 2000
1999 Fairchild Semiconductor Corporation
FDP7045L/FDB7045L
N-Channel Logic Level PowerTrench
MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
DS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
100 A, 30 V. R
DS(ON)
= 0.0045 W @ V
GS
= 10 V
R
DS(ON)
= 0.006 W @ V
GS
= 4.5 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High performance PowerTrench technology for
extremely low R
DS(ON)
.
175C maximum junction temperature rating.
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
FDP7045L
FDB7045L
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Maximum Drain Current - Continuous (Note 1)
100
75
- Pulsed (Note 1)
300
A
Total Power Dissipation @ T
C
= 25
C
125
W
P
D
Derate above 25
C
0.85
W/
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
-65 to +175
C
Thermal Characteristics
R
JC
Thermal Resistance, Junction-to-Case
1.2
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDB7045L
FDB7045L
13''
24mm
800
FDP7045L
FDP7045L
Tube
N/A
45
S
D
G
S
G
D
TO-220
FDP Series
D
G
S
TO-263AB
FDB Seri es
FDP7045L/FDB7045L
FDP7045L/FDB7045L Rev.C
Electrical Characteristics
T
C
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250
A
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
22
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
A
I
GSSF
Gate-Body Leakage Current,
Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
1
1.5
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= -250
A, Referenced to 25
C
-5
mV/
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 50 A,
V
GS
= 10 V, I
D
= 50 A, T
J
=125
C
V
GS
= 4.5 V,I
D
= 40 A
0.0039
0.0056
0.0048
0.0045
0.0070
0.0060
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
50
A
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 50 A
120
S
Dynamic Characteristics
C
iss
Input Capacitance
5400
pF
C
oss
Output Capacitance
1170
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
530
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
14
30
ns
t
r
Turn-On Rise Time
114
160
ns
t
d(off)
Turn-Off Delay Time
105
150
ns
t
f
Turn-Off Fall Time
V
DD
= 15 V, I
D
= 50 A,
V
GS
= 10 V
115
160
ns
Q
g
Total Gate Charge
50
70
nC
Q
gs
Gate-Source Charge
16
nC
Q
gd
Gate-Drain Charge
V
DS
= 15 V,
I
D
= 50 A, V
GS
= 5 V
16
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
(Note 2)
75
A
V
SD
Drain-Source Diode Forward
Voltage
V = 0 V, I = 50 A
(Note 2)
0.95
1.2
V
Notes:
1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
FDP7045L/FDB7045L
FDP7045L/FDB7045L Rev.C
Typical Characteristics
0
20
40
60
80
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN-
S
O
URCE
CURRE
NT (
A
)
V
GS
= 10V
3.0V
2.5V
4.5V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
20
40
60
80
I
D
, DRAIN CURRENT (A)
R
DS
(O
N)
,
NO
RMAL
I
Z
E
D
DRAI
N-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANCE
V
GS
= 3.0V
10V
4.0V
5.0V
4.5V
6.0V
7.0V
3.5V
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, O
N
-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
= 38A
T
A
= 125
o
C
T
A
= 25
o
C
0
10
20
30
40
50
60
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
R
EVER
SE
DRAIN CURRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
,
NO
RM
ALI
Z
E
D
D
R
A
IN
-
S
O
U
R
C
E O
N
-
R
E
S
IST
A
N
C
E
I
D
= 50A
V
GS
= 10V
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
FDP7045L/FDB7045L
FDP7045L/FDB7045L Rev.C
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
0.01
0.05
0.1
0.5
1
5
10
50
100
500
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
T
R
AN
S
I
EN
T
T
H
ER
M
A
L
R
ESIST
AN
C
E
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R = 1.2 C/W
JC
JC
JC
T - T = P * R (t)
JC
C
J
P(pk)
t
1
t
2
r
(
t
)
,

N
O
R
M
A
L
I
Z
E
D

E
F
F
E
C
T
I
V
E
1
0
1000
2000
3000
4000
5000
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R
JC
= 1.2
o
C/W
T
C
= 25
o
C
0
1000
2000
3000
4000
5000
6000
7000
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JC
= 1.2
o
C/W
T
C
= 25
o
C
100ms
10ms
1ms
100
s
10
s
0
2
4
6
8
10
0
20
40
60
80
100
Q
g
, GATE CHARGE (nC)
I
D
= 50A
V
DS
= 5V
10V
15V
TO-220 Tape and Reel Data and Package Dimensions
August 1999, Rev. B
0.165
TO-220 Tube Packing
Configuration:
Figur e 1.0
Note/Comments
Packaging Option
TO-220 Packaging Information
Standard
(no
f l ow code )
Packaging type
Rail/Tube
Qty per Tube/Box
45
Box Dimension (mm)
530x130x83
Max qty per Box
1,080
Weight per unit (gm)
1.4378
S62Z
BULK
300
114x102x51
1,500
1.4378
FSCINT Label
FSCINT Label
114mm x 102mm x 51mm
EO70 Immed iate Box
530mm x 130mm x 83mm
Intermediate bo x
300 units per
EO70 box
5 EO70 boxe s per per
Interm ediate Bo x
1500 uni ts maxi mum
qu ant it y per intermediate box
An ti-stati c
Bubbl e Sheet s
45 un it s per Tube
Conduct ive Plas ti c B ag
1080 uni ts maxi mum
qu ant it y per bo x
530mm x 130mm x 83mm
Intermediate bo x
FSCINT Label
12 Tube s per Bag
Note: All dim ensions are in inches
F9852
NDP4060L
F9852
NDP4060L
F9852
NDP4060L
F9852
NDP4060L
F9852
NDP4060L
F9852
NDP4060L
F9852
NDP4060L
F9852
NDP4060L
F9852
NDP4060L
F9852
NDP4060L
F9852
NDP4060L
F9852
NDP4060L
1.300
.015
0.080
0.032
.003
0.275
0.275
0.160
0.800
0.450
.030
20.000
+0.031
-0.065
0.123
+0.001
-0.003
LOT:
CBVK741B019
NSID:
FDP7060
D/C1:
D9842
SPEC REV:
B2
SPEC:
QTY:
1080
QA REV:
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
(FSCINT)
FSCINT Labe l samp le
TO-220 Tube
Configuration:
Figure 4.0
TO-220 Packaging
Information:
Figure 2.0
TO-220 bulk Packing
Configuration:
Figure 3.0
2 bag s per Box
Packaging Description:
TO-220 parts are ship ped normally in tube. The tube is
made of PVC plastic treated with anti -stati c agent.These
tubes in standard option are placed inside a dissipative
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made of recyclable corrugated pa per. One box contains
two ba gs maximum (see fig. 1.0). And one or several o f
these boxes are placed inside a labeled shipp ing bo x
whic h c omes in different sizes dependi ng on the nu mber
of parts ship ped. The other option comes in bulk as
described in the Packagin g Information table. The unit s in
this option are placed inside a small box laid w ith anti-
static bubble sheet. These smaller boxes are individually
labeled and placed ins ide a larger box (see fig. 3.0).
These larger or intermediate boxes then will b e placed
finally inside a labeled shipping box whic h still comes in
different sizes depending on the number of units shipped.
TO-220 (FS PKG Code 37)
TO-220 Tape and Reel Data and Package Dimensions, continued
September 1998, Rev. A
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
TO-263AB/D
2
PAK Packaging
Configuration: Figure 1.0
Components
TO-263AB/D
2
PAK Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
TO-263AB/D
2
PAK Packaging Information
Standard
(no flow code)
L86Z
Packaging type
Reel Size
TNR
13" Dia
Rail/Tube
-
Qty per Reel/Tube/Bag
800
45
Box Dimension (mm)
359x359x57
530x130x83
Max qty per Box
800
1,080
Weight per unit (gm)
1.4378
1.4378
Weight per Reel
1.6050
-
Moisture Sensitive
Label
DRYPACK Bag
ESD Label
F63TNR Label
359mm x 359mm x 57mm
Standard Intermediate box
TO-263AB/D
2
PAK Unit Orientation
FD
B60
3AL
F98
35
FD
B60
3AL
F98
35
FD
B60
3AL
F98
35
FD
B60
3AL
F98
35
F63TNR Label sample
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Antistatic Cover Tape
ESD Label
EL ECT RO ST AT IC
SEN SIT IVE DEVI CES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
CAUTION
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Customized
Label
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D/C1: D9842 QTY1:
SPEC REV:
SPEC:
QTY: 800
D/C2:
QTY2:
CPN:
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Leader Tape
1520mm minimum or
95 empty pockets
Trailer Tape
400mm minimum or
25 empty pockets
Packaging Description:
TO-263/D
2
PAK parts are shipped in tape. The carrier tape
is made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
800 units per 13" or 330cm diameter reel. The reels are
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static coated). This and some other options are further
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TO-263AB/D
2
PAK Tape and Reel Data and Package
Dimensions
September 1999, Rev. B
P1
A0
D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
24mm
13" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.961 +0.078/-0.000
24.4 +2/0
1.197
30.4
0.941 0.1.079
23.9 27.4
See detail AA
Dim A
max
13" Diameter Option
Dim A
Max
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum component rotation
0.9mm
maximum
0.9mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
10 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
TO-263AB/D
2
PAK Embossed Carrier Tape
Configuration: Figure 3.0
TO-263AB/D
2
PAK Reel Configuration:
Figure 4.0
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
T
D
2
PAK
O263AB/
(24mm)
10.60
+/-0.10
15.80
+/-0.10
24.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
22.25
min
11.50
+/-0.10
16.0
+/-0.1
4.0
+/-0.1
4.90
+/-0.10
0.450
+/-0.150
21.0
+/-0.3
0.06
+/-0.02
TO-263AB/D
2
PAK Tape and Reel Data and Package Dimensions, continued
August 1999, Rev. B
TO-263AB/D
2
PAK (FS PKG Code 45)
TO-263AB/D
2
PAK Tape and Reel Data and Package Dimensions, continued
August 1998, Rev. A
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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SyncFETTM
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UHCTM
VCXTM
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrench
QFETTM
QSTM
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SuperSOTTM-6
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Rev. D