November 2005
FDP88
76 N-
Channel
Powe
rTr
e
nc
h
MO
SFET
2005 Fairchild Semiconductor Corporation
FDP8876 Rev. A
www.fairchildsemi.com
1
FDP8876
N-Channel PowerTrench
MOSFET
30V, 71A, 8.5m
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Features
r
DS(ON)
= 8.5m
, V
GS
= 10V, I
D
= 40A
r
DS(ON)
= 10.3m
, V
GS
= 4.5V, I
D
= 40A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
D
G
S
TO-220AB
FDP SERIES
DRAIN
DRAIN
GATE
SOURCE
(FLANGE)
MOSFET Maximum Ratings
T
A
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
30
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current
70
A
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V)
64
A
Pulsed
Figure 4
A
E
AS
Single Pulse Avalanche Energy (Note 1)
180
mJ
P
D
Power dissipation
70
W
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
o
C
R
JC
Thermal Resistance Junction to Case TO-263
2.14
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-263,1in
2
copper pad area
62
o
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP8876
FDP8876
TO-220AB
Tube
N/A
50 units
FDP88
76 N-
Channel
Powe
rTr
enc
h
MO
SFET
FDP8876 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
30
-
-
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V
1
A
V
GS
= 0V
T
A
= 150
o
C
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
= 20V
-
-
100
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
1.2
-
2.5
V
r
DS(ON)
Drain to Source On Resistance
I
D
= 40A, V
GS
= 10V
-
6.1
8.7
m
I
D
= 40A, V
GS
= 4.5V
-
7.7
10.5
I
D
= 40, V
GS
= 10V,
T
A
= 175
o
C
-
11
14
Dynamic Characteristics
C
ISS
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
1700
-
pF
C
OSS
Output Capacitance
-
340
-
pF
C
RSS
Reverse Transfer Capacitance
-
210
-
pF
R
G
Gate Resistance
V
GS
=0.5V, f = 1MHz
-
2.3
-
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 0V to 10V V
DD
= 15V
I
D
= 40A
I
g
= 1.0mA
-
32
45
nC
Q
g(5)
Total Gate Charge at 5V
V
GS
= 0V to 5V
-
17
24
nC
Q
g(TH)
Threshold Gate Charge
V
GS
= 0V to 1V
-
1.6
2.4
nC
Q
gs
Gate to Sourse Gate Charge
-
4.7
-
nC
Q
gs2
Gate Charge Threshold to Plateau
-
3.1
-
nC
Q
gd
Gate to Drain "Miller" Charge
-
7.0
-
nC
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 40A
V
GS
= 10V, R
GS
= 10
-
-
189
ns
t
d(ON)
Turn-On Delay Time
-
9
-
ns
t
r
Rise Time
-
97
-
ns
t
d(OFF)
Turn-Off Delay Time
-
51
-
ns
t
f
Fall Time
-
39
-
ns
t
OFF
Turn-Off Time
-
-
135
ns
Drain-Source Diode Characteristic
V
SD
Source to Drain Diode Voltage
I
SD
= 40A
-
-
1.25
V
I
SD
= 3.2A
-
-
1.0
V
t
rr
Reverse Recovery Time
I
SD
= 40A, dI
SD
/dt=100A/
s
-
-
22
ns
Q
RR
Reverse Recovered Charge
I
SD
= 40A, dI
SD
/dt=100A/
s
-
-
9
nC
Notes:
1: Starting T
J
=25
O
C,L=1mH,I
AS
=19A,V
DD
=27V,V
GS
=10V
2: Pulse width=100s
FDP88
76 N-
Channel
Powe
rTr
enc
h
MO
SFET
FDP8876 Rev. A
www.fairchildsemi.com
3
Typical Characteristics
T
A
= 25C unless otherwise noted
Figure 1. On Region Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
0
20
40
60
80
100
PULSE DURATION=80
S
DUTY CYCLE=0.5%MAX
VGS=3V
VGS=3.5V
VGS=4.5V
VGS=10V
I D
,
D
RA
I
N
DU
RR
E
NT(
A
)
VDS,DRAIN TO SOURSE VOLTAGE(V)
TC=25
oC
Figure 2.
10
20
30
40
50
60
70
80
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
R
DS(
O
N)
, NO
RMAL
I
Z
ED
D
RAI
N
T
O
SO
URCE O
N
-RESI
S
T
ANCE
I
D
,DRAIN CURRENT
3v
3.5v
4v
4.5v
5v
10v
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
On-Resistance Variation with Drain
Current and Gate Voltage
Figure 3.
-80
-40
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
TJ, JUNCTION TEMPERATURE (
oC)
R
DS(ON)
,
NO
RM
AL
I
Z
E
D
DRAI
N
-
S
O
U
RCE
ON
-R
E
S
I
S
T
ANC
E
PULSE DURATION=80
S
DUTY CYCLE=0.5%MAX
ID = 40A
VGS = 10V
On Resistance Variation with
Temperature
Figure 4.
3
4
5
6
7
8
9
10
0.006
0.008
0.010
0.012
0.014
0.016
PULSE DURATION=80
S
DUTY CYCLE=0.5%MAX
TA = 25
o
C
R
DS
(O
N)
,
ON
-RE
S
I
S
TANC
E
(
O
HM
)
VGS, GATE TO SOURCE VOLTAGE (V)
ID=40A
TA = 125
o
C
On-Resistance Variation with
Gate-to-Source Votlage
Figure 5. Transfer Characteristics
I
D
, DRAIN CU
RREN
T
(A)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
40
80
120
160
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
-25oC
25oC
I S
,
REVE
R
S
E
DRA
I
N
C
URR
ENT
(A
)
VSD, BODY DIODE FORWARD VOLTAGE (V)
125oC
VGS=0V
Body Diode Forward Voltage Variation
With Source Current and Temperature
FDP88
76 N-
Channel
Powe
rTr
enc
h
MO
SFET
FDP8876 Rev. A
www.fairchildsemi.com
4
Figure 7.
0
5
10
15
20
25
30
35
0
2
4
6
8
10
V
GS
,
G
A
T
E TO
S
O
U
R
C
E VOLTA
G
E(
V)
Qg,GATE CHARGE(nC)
VDD=15V
WAVEFORMS IN
DESCENDING ORDER:
ID=40A,ID=5A
Gate Charge characteristics
Figure 8.
100
1000
0.1
1
10
30
5000
C,
CAP
ACIT
ANCE
(pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
= C
GD
Saturation characteristics
Figure 9. Unclamped Inductive Switching
Capability
1
10
100
0.001
0.01
0.1
1
10
100
I
AS
,
A
V
A
L
AN
CH
E CU
RRE
N
T (
A
)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
Figure 10.
0.1
1
10
100
1000
1
10
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRA
I
N
CUR
RE
N
T
(A
)
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
s
1ms
DC
100
s
10ms
Safe Operating Area
Figure 11. Maximum Continuous Drain Current vs
Case Temperature
0
20
40
60
80
25
50
75
100
125
150
175
I
D
, DR
AI
N CU
R
R
E
N
T
(A
)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 4.5V
V
GS
= 10V
Figure 12. Normalized Drain to Source Breake
Down Voltage vs Junction Temperature
R
JC
= 2.14
o
C/W
T
J
= 25
o
C
SINGLE PULSE
10
-5
10
-4
10
-3
10
0
10
1
10
-2
10
-1
60
100
800
t, PULSE WIDTH (s)
P
(P
K)
, PE
AK
TRA
NS
I
ENT
POW
E
R
(
W
)
Typical Characteristics
T
A
= 25C unless otherwise noted
FDP88
76 N-
Channel
Powe
rTr
enc
h
MO
SFET
FDP8876 Rev. A
www.fairchildsemi.com
5
Figure 13.
0.01
0.1
1
2
10
-5
10
-4
10
-3
10
0
10
1
10
-1
10
-2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
qJC
x R
qJC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
t, RECTANGULAR PULSE DURATION (s)
Z
JC
, NORMALIZE
D
THE
RMA
L IM
PE
DANC
E
Normolized Maximum Transient Thermal Impedance
Typical Characteristics
T
A
= 25C unless otherwise noted
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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