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Электронный компонент: FDPF44N25T

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2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
F
D
PF4
4N25 2
50V N-Chann
el MOSFE
T
UniFET
TM
FDPF44N25 Rev A
FDPF44N25
250V N-Channel MOSFET
Features
18A, 250V, R
DS(on)
= 0.069
@V
GS
= 10 V
Low gate charge ( typical 47 nC)
Low C
rss
( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild's proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
TO-220F
FDPF Series
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDPF44N25
Unit
V
DSS
Drain-Source Voltage
250
V
I
D
Drain Current
- Continuous (T
C
= 25
C)
- Continuous (T
C
= 100
C)
18
10.8
A
A
I
DM
Drain Current
- Pulsed
(Note 1)
72
A
V
GSS
Gate-Source voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
2055
mJ
I
AR
Avalanche Current
(Note 1)
18
A
E
AR
Repetitive Avalanche Energy
(Note 1)
5.6
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
C)
- Derate above 25
C
56
0.45
W
W/
C
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300
C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
R
JC
Thermal Resistance, Junction-to-Case
--
2.23
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
--
62.5
C/W
2
www.fairchildsemi.com
F
D
PF4
4N25 2
50V N-Chann
el MOSFE
T
FDPF44N25 Rev A
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDPF44N25
FDPF44N25T
TO-220F
Potting Type
--
--
50
FDPF44N25
FDPF44N25
TO-220F
--
--
50
Electrical Characteristics
T
C
= 25C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Typ.
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
A
250
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.25
--
V/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 250V, V
GS
= 0V
V
DS
= 200V, T
C
= 125
C
--
--
--
--
1
10
A
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30V, V
DS
= 0V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30V, V
DS
= 0V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
3.0
--
5.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 9A
--
0.058
0.069
g
FS
Forward Transconductance
V
DS
= 40V, I
D
= 9A
(Note 4)
--
32
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
2210
2870
pF
C
oss
Output Capacitance
--
450
585
pF
C
rss
Reverse Transfer Capacitance
--
60
90
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 125V, I
D
= 44A
R
G
= 25
(Note 4, 5)
--
53
117
ns
t
r
Turn-On Rise Time
--
402
814
ns
t
d(off)
Turn-Off Delay Time
--
85
179
ns
t
f
Turn-Off Fall Time
--
112
234
ns
Q
g
Total Gate Charge
V
DS
= 200V, I
D
= 44A
V
GS
= 10V
(Note 4, 5)
--
47
61
nC
Q
gs
Gate-Source Charge
--
18
--
nC
Q
gd
Gate-Drain Charge
--
24
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
18
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
72
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 18A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
S
= 44A
dI
F
/dt =100A/
s
(Note 4)
--
195
--
ns
Q
rr
Reverse Recovery Charge
--
1.8
--
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10.1mH, I
AS
= 18A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
C
3. I
SD
18A, di/dt 200A/s, V
DD
BV
DSS
, Starting T
J
= 25
C
4. Pulse Test: Pulse width
300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
3
www.fairchildsemi.com
F
D
PF4
4
N25 2
50V N-Chann
e
l MOSFE
T
FDPF44N25 Rev A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2
4
6
8
10
12
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
Notes :

1. V
DS
= 40V
2. 250s Pulse Test
I
D
,
Dr
ain Curr
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :

1. 250s Pulse Test
2. T
C
= 25
I
D
,
Dr
ain
Cur
r
e
n
t
[
A
]
V
DS
, Drain-Source Voltage [V]
0
25
50
75
100
125
150
0.04
0.06
0.08
0.10
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N)
[
],
Dr
ai
n-
Sou
r
ce
O
n
-
R
es
is
t
a
n
c
e
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
150
Notes :

1. V
GS
= 0V
2. 250s Pulse Test
25
I
DR
,
Rev
e
r
s
e D
r
ain Cur
r
ent

[
A
]
V
SD
, Source-Drain voltage [V]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;

1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
apa
ci
t
a
n
c
es [pF]
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
60
70
0
2
4
6
8
10
12
V
DS
= 125V
V
DS
= 50V
V
DS
= 200V
Note : I
D
= 44A
V
GS
, G
a
te-Sou
r
c
e Vo
ltag
e
[V]
Q
G
, Total Gate Charge [nC]
4
www.fairchildsemi.com
F
D
PF4
4
N25 2
50V N-Chann
e
l MOSFE
T
FDPF44N25 Rev A
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :

1. V
GS
= 0 V
2. I
D
= 250 A
BV
DS
S
,
(Nor
m
a
liz
e
d
)
D
r
ai
n-S
o
urce B
r
e
a
kd
ow
n
V
o
l
t
age
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :

1. V
GS
= 10 V
2. I
D
= 9 A
R
DS
(O
N)
, (N
ormal
i
z
ed)
Dr
ain
-
S
o
u
r
ce
O
n
-R
es
ista
nc
e
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
s
100 ms
1 ms
DC
10 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Dr
ain Cur
r
en
t [A]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
10
20
I
D
,
Dr
ain C
u
r
r
e
nt
[
A
]
T
C
, Case Temperature [ ]
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
- 2
1 0
- 1
1 0
0
N o te s :

1 . Z
J C
( t) = 2 .2 3 /W M a x .
2 . D u ty F a c to r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(t), The
r
mal
R
e
s
pon
se
t
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
t
1
P
DM
t
2
5
www.fairchildsemi.com
F
D
PF4
4
N25 2
50V N-Chann
e
l MOSFE
T
FDPF44N25 Rev A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
www.fairchildsemi.com
F
D
PF4
4
N25 2
50V N-Chann
e
l MOSFE
T
FDPF44N25 Rev A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
www.fairchildsemi.com
F
D
PF4
4
N25 2
50V N-Chann
e
l MOSFE
T
FDPF44N25 Rev A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to affect
its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
WireTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16