2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDP55N06/FDPF55N06 Rev. A
F
D
P55N06/FDPF55N06 60V N-Chan
nel MOSFET
UniFET
TM
FDP55N06/FDPF55N06
60V N-Channel MOSFET
Features
55A, 60V, R
DS(on)
= 0.022
@V
GS
= 10 V
Low gate charge ( typical 30 nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP55N06
FDPF55N06
Units
V
DSS
Drain-Source Voltage
60
V
I
D
Drain Current
- Continuous (T
C
= 25C)
55
55 *
A
- Continuous (T
C
= 100C)
34.8
34.8 *
A
I
DM
Drain Current
- Pulsed
(Note 1)
220
220 *
A
V
GSS
Gate-Source Voltage
25
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
480
mJ
I
AR
Avalanche Current
(Note 1)
55
A
E
AR
Repetitive Avalanche Energy
(Note 1)
11.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25C)
114
48
W
- Derate above 25C
0.9
0.4
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8
from case for 5 seconds
300
C
Symbol
Parameter
FDP55N06
FDPF55N06
Units
R
JC
Thermal Resistance, Junction-to-Case
1.1
2.58
C/W
R
JS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
C/W
2
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FDP55N06/FDPF55N06 Rev. A
F
D
P55N06/FDPF55N06 60V N-Chan
nel MOSFET
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP55N06
FDP55N06
TO-220
50
FDPF55N06
FDPF55N06
TO-220F
50
Electrical Characteristics
T
C
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
60
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature Coefficient
I
D
= 250
A, Referenced to 25C
--
0.05
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 60 V, V
GS
= 0 V
--
--
1
A
V
DS
= 48 V, T
C
= 150C
--
--
10
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 20 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -20 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2.0
--
4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 27.5 A
--
0.018
0.022
g
FS
Forward Transconductance
V
DS
= 25 V, I
D
= 27.5 A
(Note 4)
--
33
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
1160
1510
pF
C
oss
Output Capacitance
--
375
490
pF
C
rss
Reverse Transfer Capacitance
--
60
90
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 30 V, I
D
= 55 A,
R
G
= 25
(Note 4, 5)
--
30
65
ns
t
r
Turn-On Rise Time
--
130
265
ns
t
d(off)
Turn-Off Delay Time
--
70
150
ns
t
f
Turn-Off Fall Time
--
95
195
ns
Q
g
Total Gate Charge
V
DS
= 48 V, I
D
= 55A,
V
GS
= 10 V
(Note 4, 5)
--
30
37
nC
Q
gs
Gate-Source Charge
--
6.5
--
nC
Q
gd
Gate-Drain Charge
--
7.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
55
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
220
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 55 A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 55 A,
dI
F
/ dt = 100 A/
s
(Note 4)
--
40
--
ns
Q
rr
Reverse Recovery Charge
--
55
--
C
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.6mH, I
AS
= 55A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25C
3. I
SD
55A, di/dt 200A/s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300s, Duty cycle 2%
5. Essentially independent of operating temperature
3
www.fairchildsemi.com
FDP55N06/FDPF55N06 Rev. A
F
D
P55N06/FDPF55N06 60V N-Chan
nel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
* Notes :
1. 250s Pulse Test
2. T
C
= 25
o
C
I
D
,
D
r
ai
n C
ur
r
ent
[
A
]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
* Notes :
1. V
DS
= 30V
2. 250s Pulse Test
I
D
,
D
r
ai
n C
u
r
r
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
0
25
50
75
100
125
150
175
200
0.02
0.03
0.04
0.05
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
o
C
R
DS
(
O
N)
[O
],
D
r
ai
n-
S
o
ur
ce O
n
-
R
esi
s
t
a
n
c
e
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
150
o
C
* Notes :
1. V
GS
= 0V
2. 250s Pulse Test
25
o
C
I
DR
,
R
ev
er
s
e D
r
ai
n C
ur
r
ent
[
A
]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Note :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
a
p
a
ci
t
anc
es [
p
F]
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
30
0
2
4
6
8
10
12
V
DS
= 30V
V
DS
= 48V
* Note : I
D
= 55A
V
GS
,
G
a
te
-
S
o
u
r
c
e
V
o
l
t
age
[
V
]
Q
G
, Total Gate Charge [nC]
4
www.fairchildsemi.com
FDP55N06/FDPF55N06 Rev. A
F
D
P55N06/FDPF55N06 60V N-Chan
nel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DS
S
, (N
o
r
m
a
liz
e
d
)
D
r
ai
n-S
ource Breakdow
n Vol
t
a
g
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
GS
= 10 V
2. I
D
= 27.5 A
R
DS(
O
N)
,
(
N
or
malized)
D
r
ain-
Sour
ce On-
R
e
s
ist
a
nce
T
J
, Junction Temperature [
o
C]
Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FDP55N06
for FDPF55N06
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
1 ms
10 s
DC
10 ms
100 s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drai
n
C
u
rrent [A
]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
100 ms
1 ms
10 s
DC
10 ms
100 s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drai
n
C
u
rrent [A
]
V
DS
, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
25
50
75
100
125
150
0
10
20
30
40
50
60
I
D
, D
ra
i
n
C
u
rr
en
t [A]
T
C
, Case Temperature [
o
C]
5
www.fairchildsemi.com
FDP55N06/FDPF55N06 Rev. A
F
D
P55N06/FDPF55N06 60V N-Chan
nel MOSFET
Typical Performance Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve for FDP55N06
Figure 11-2. Transient Thermal Response Curve for FDPF55N06
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* Notes :
1. Z
? JC
(t) = 1.1
o
C/W M ax.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
? JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
?J
C
(t
),
T
h
er
ma
l
Re
s
p
o
n
s
e
t
1
, Square W ave Pulse Duration [sec]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* N otes :
1. Z
? JC
(t) = 2.58
o
C /W M ax.
2. D uty Factor, D =t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
? JC
(t)
single pulse
D =0.5
0.02
0.2
0.05
0.1
0.01
Z
?J
C
(
t
)
,
Ther
mal
R
e
s
ponse
t
1
, Sq uare W ave Pulse D uration [sec]
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
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FDP55N06/FDPF55N06 Rev. A
F
D
P55N06/FDPF55N06 60V N-Chan
nel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
www.fairchildsemi.com
FDP55N06/FDPF55N06 Rev. A
F
D
P55N06/FDPF55N06 60V N-Chan
nel MOSFET
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
8
www.fairchildsemi.com
FDP55N06/FDPF55N06 Rev. A
F
D
P55N06/FDPF55N06 60V N-Chan
nel MOSFET
9
www.fairchildsemi.com
FDP55N06/FDPF55N06 Rev. A
F
D
P55N06/FDPF55N06 60V N-Chan
nel MOSFET
Mechanical Dimensions
(7.00)
(0.70)
MAX1.47
(30
)
#1
3.30
0.10
15.80
0.20
15.87
0.20
6.68
0.20
9.75
0.30
4.70
0.20
10.16
0.20
(1.00x45
)
2.54
0.20
0.80
0.10
9.40
0.20
2.76
0.20
0.35
0.10
3.18
0.10
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
0.50
+0.10
0.05
TO-220F
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
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OCXTM
OCXProTM
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PACMANTM
POPTM
Power247TM
PowerEdgeTM
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
Rev. I16
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
WireTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
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