2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDP79N15 / FDPF79N15 Rev. A
F
D
P79N15 / FDPF79N15 150V N-Ch
annel MOSFET
May 2006
UniFET
TM
FDP79N15 / FDPF79N15
150V N-Channel MOSFET
Features
79A, 150V, R
DS(on)
= 0.03
@V
GS
= 10 V
Low gate charge ( typical 56 nC)
Low Crss ( typical 96pF)
Fast switching
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
FDP79N15 FDPF79N15
Unit
V
DSS
Drain-Source Voltage
150
V
I
D
Drain Current
- Continuous (T
C
= 25
C)
- Continuous (T
C
= 100
C)
79
50
79*
50*
A
A
I
DM
Drain Current
- Pulsed
(Note 1)
316
316*
A
V
GSS
Gate-Source voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1669
mJ
I
AR
Avalanche Current
(Note 1)
79
A
E
AR
Repetitive Avalanche Energy
(Note 1)
46.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
C)
- Derate above 25
C
463
3.7
31
0.25
W
W/
C
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP79N15
FDPF79N15
Unit
R
JC
Thermal Resistance, Junction-to-Case
0.27
--
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
C/W
2
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FDP79N15 / FDPF79N15 Rev. A
F
D
P79N15 / FDPF79N15 150V N-Ch
annel MOSFET
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP79N15
FDP79N15
TO-220
-
-
50
FDPF79N15
FDPF79N15
TO-220F
-
-
50
Electrical Characteristics
T
C
= 25C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
A, T
J
= 25
C
150
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.15
--
V/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 150V, V
GS
= 0V
V
DS
= 120V, T
C
= 125
C
--
--
--
--
1
10
A
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30V, V
DS
= 0V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30V, V
DS
= 0V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
3.0
--
5.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 39.5A
--
0.025
0.03
g
FS
Forward Transconductance
V
DS
= 40V, I
D
= 39.5A
(Note 4)
--
46
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
2620
3410
pF
C
oss
Output Capacitance
--
730
950
pF
C
rss
Reverse Transfer Capacitance
--
96
140
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 75V, I
D
= 79A
R
G
= 25
(Note 4, 5)
--
50
112
ns
t
r
Turn-On Rise Time
--
200
410
ns
t
d(off)
Turn-Off Delay Time
--
55
120
ns
t
f
Turn-Off Fall Time
--
38
85
ns
Q
g
Total Gate Charge
V
DS
= 120V, I
D
= 79A
V
GS
= 10V
(Note 4, 5)
--
56
73
nC
Q
gs
Gate-Source Charge
--
18
--
nC
Q
gd
Gate-Drain Charge
--
21
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
79
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
316
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 79A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0V, I
S
= 79A
dI
F
/dt =100A/
s
(Note 4)
--
136
--
ns
Q
rr
Reverse Recovery Charge
--
2.1
--
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.357mH, I
AS
= 79A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
C
3. I
SD
79A, di/dt 200A/s, V
DD
BV
DSS
, Starting T
J
= 25
C
4. Pulse Test: Pulse width
300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
3
www.fairchildsemi.com
FDP79N15 / FDPF79N15 Rev. A
F
D
P79N15 / FDPF79N15 150V N-Ch
annel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250s Pulse Test
2. T
C
= 25
I
D
,
Drai
n Cu
r
ren
t
[A]
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
12
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250s Pulse Test
I
D
,
D
r
ain Cur
r
ent
[
A
]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperatue
0
25
50
75
100
125
150
175
200
0.02
0.03
0.04
0.05
0.06
0.07
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(ON
)
[
],
Drain-
Sour
ce O
n
-
R
esista
nce
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
0
10
1
10
2
150
Notes :
1. V
GS
= 0V
2. 250s Pulse Test
25
I
DR
, Rev
e
rse
Dra
i
n C
u
r
r
ent
[A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Ca
pa
c
i
t
a
nc
es
[
p
F
]
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
60
0
2
4
6
8
10
12
V
DS
= 75V
V
DS
= 30V
V
DS
= 120V
Note : I
D
= 79A
V
GS
, G
a
te-S
ou
rc
e V
o
l
t
a
g
e [V]
Q
G
, Total Gate Charge [nC]
4
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FDP79N15 / FDPF79N15 Rev. A
F
D
P79N15 / FDPF79N15 150V N-Ch
annel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250 A
BV
DSS
,
(Nor
ma
l
i
z
e
d)
Dr
ain-S
our
c
e Br
eak
dow
n
Volt
ag
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 34.5 A
R
DS
(
O
N)
, (N
orma
l
i
z
ed
)
D
r
a
in-
S
o
u
r
ce
O
n
-
R
es
ist
a
nc
e
T
J
, Junction Temperature [
o
C]
Figure 9-1. Maximum Safe Operating Area
Figure 9-2. Maximum Safe Operating Area
for FDP79N15
for FDPF79N15
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
DC
100ms
10ms
1ms
100
s
10
s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
,
D
r
ain
Cu
rr
en
t
[A]
V
DS
, Drain-SourceVoltage[V]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
DC
100ms
10ms
1ms
100
s
10
s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
,
D
r
ain Cu
rr
ent [A]
V
DS
, Drain-SourceVoltage[V]
Figure 10. Maximum Drain Current
vs. Case Temperature
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
I
D
,
D
r
ain
Cur
ren
t [
A
]
T
C
, Case Temperature [ ]
5
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FDP79N15 / FDPF79N15 Rev. A
F
D
P79N15 / FDPF79N15 150V N-Ch
annel MOSFET
Typical Performance Characteristics
(Continued)
Figure 11-1. Transient Thermal Response Curve for FDP79N15
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* Notes :
1. Z
JC
(t) = 0.27
0
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
?J
C
(t
), Th
erma
l
R
es
p
on
se
t
1
, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
Figure 11-2. Transient Thermal Response Curve for FDPF79N15
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* Notes :
1. Z
JC
(t) = 0.67
0
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
?J
C
(t
), Th
erma
l
R
es
p
on
se
t
1
, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
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FDP79N15 / FDPF79N15 Rev. A
F
D
P79N15 / FDPF79N15 150V N-Ch
annel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
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FDP79N15 / FDPF79N15 Rev. A
F
D
P79N15 / FDPF79N15 150V N-Ch
annel MOSFET
8
www.fairchildsemi.com
FDP79N15 / FDPF79N15 Rev. A
F
D
P79N15 / FDPF79N15 150V N-Ch
annel MOSFET
Mechanical Dimensions
4.50
0.20
9.90
0.20
1.52
0.10
0.80
0.10
2.40
0.20
10.00
0.20
1.27
0.10
3.60
0.10
(8.70)
2.80
0.10
15.90
0.20
10.08
0.30
18.95MAX.
(1.70)
(3.70)
(3.00)
(1.46)
(1.00)
(45
)
9.20
0.20
13.08
0.20
1.30
0.10
1.30
+0.10
0.05
0.50
+0.10
0.05
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
TO-220
Dimensions in Millimeters
9
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FDP79N15 / FDPF79N15 Rev. A
F
D
P79N15 / FDPF79N15 150V N-Ch
annel MOSFET
Mechanical Dimensions
(Continued)
(7.00)
(0.70)
MAX1.47
(30
)
#1
3.30
0.10
15.80
0.20
15.87
0.20
6.68
0.20
9.75
0.30
4.70
0.20
10.16
0.20
(1.00x45
)
2.54
0.20
0.80
0.10
9.40
0.20
2.76
0.20
0.35
0.10
3.18
0.10
2.54TYP
[2.54
0.20
]
2.54TYP
[2.54
0.20
]
0.50
+0.10
0.05
TO-220F
Dimensions in Millimeters
10
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10
www.fairchildsemi.com
F
D
P79N15 / FDPF79N15 150V N-Ch
annel MOSFET
Rev. I19
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
ScalarPumpTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TCMTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UniFETTM
UltraFET
VCXTM
WireTM
FACT Quiet SeriesTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FDP79N15 / FDPF79N15 Rev. A
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