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Электронный компонент: FDQ7238AS_NF40

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June 2005
2005 Fairchild Semiconductor Corporation
FDQ7238AS Rev A(X)
FDQ7238AS
Dual Notebook Power Supply N-Channel PowerTrench
in SO-14 Package
General Description
The FDQ7238AS is designed to replace two single SO-
8 MOSFETs in DC to DC power supplies. The high-side
switch (Q1) is designed with specific emphasis on
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild's SyncFET
TM
technology. The FDQ7238AS
includes a patented combination of a MOSFET
monolithically integrated with a Schottky diode.
Features
Q2: 14 A, 30V. R
DS(on)
= 8.7 m
@ V
GS
= 10V
R
DS(on)
= 10.5 m
@ V
GS
= 4.5V
Q1: 11 A, 30V. R
DS(on)
= 13.2 m
@ V
GS
= 10V
R
DS(on)
= 16 m
@ V
GS
= 4.5V
SO-14
G1
G2
Vin
S2
S2
S2
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol Parameter
Q2
Q1 Units
V
DSS
Drain-Source
Voltage
30
30
V
V
GSS
Gate-Source
Voltage
20
20
V
14 11
I
D
Drain Current - Continuous
(Note 1a)
-
Pulsed
50 50
A
2.4 1.8
P
D
Power Dissipation for Single Operation
(Note 1a & 1b)
(Note 1c & 1d)
1.3 1.1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
-
55 to +150
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a & 1b)
52 68
R
JA
(Note 1c & 1d)
94 118
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDQ7238AS FDQ7238AS 13"
16mm 2500
units
FDQ7238AS FDQ7238AS_NL
(Note 3)
13"
16mm
2500
units
FDQ7238AS FDQ7238AS_NF40
(Note 4)
13"
16mm
2500
units
FDQ7238AS
pin 1
FDQ7238AS Rev A (X)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter Test
Conditions
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V,
I
D
= 1 mA
V
GS
= 0 V,
I
D
= 250
A
Q2
Q1
30
30
V
BV
DSS
T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 10 mA, Referenced to 25
C
I
D
= 250
A, Referenced to 25
C
Q2
Q1

25
24
mV/
C
V
DS
= 24 V,
V
GS
= 0 V
Q2
Q1
500
1
A
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V,
T
J
= 125
C
Q2
Q1
5.6
40
mA
A
I
GSS
Gate-Body
Leakage
V
GS
=
20 V,
V
DS
= 0 V
ALL
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
A
Q2
Q1
1
1
1.8
1.7
3
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, Referenced to 25
C
I
D
= 250
A, Referenced to 25
C
Q2
Q1
-
3
-
4
mV/
C
V
GS
= 10 V,
I
D
= 14 A
V
GS
= 4.5 V,
I
D
= 13 A
V
GS
= 10 V, I
D
= 14A, T
J
= 125
C
Q2

7.2
8.7
10
8.7
10.5
12.5
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 11 A
V
GS
= 4.5 V,
I
D
= 10 A
V
GS
= 10 V, I
D
= 11, T
J
= 125
C
Q1 11
13
15
13.2
16
19
m
I
D(on)
OnState Drain Current
V
GS
= 10 V,
V
DS
= 5 V
V
GS
= 10 V,
V
DS
= 5 V
Q2
Q1
50
50
A
g
FS
Forward
Transconductance
V
DS
= 10 V,
I
D
= 14 A
V
DS
= 10 V,
I
D
= 11 A
Q2
Q1
58
43
S
Dynamic Characteristics
C
iss
Input
Capacitance
Q2
Q1
1530
920
pF
C
oss
Output
Capacitance
Q2
Q1
440
190
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz

Q2
Q1
160
120
pF
R
g
Gate
Resistance
V
GS
= 15mV, f = 1.0 MHz
Q2
Q1
1.9
1.9

FDQ7238
A
S
FDQ7238AS Rev A (X)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter Test
Conditions
Type
Min
Typ Max Units
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
Q2
Q1
12
9
21
18
ns
t
r
Turn-On
Rise
Time
Q2
Q1
13
5
23
10
ns
t
d(off)
Turn-Off Delay Time
Q2
Q1
30
27
49
43
ns
t
f
Turn-Off
Fall
Time
V
DD
= 15 V,
I
D
= 1 A,
V
GS
= 10V,
R
GEN
= 6
Q2
Q1
19
4
35
8
ns
t
d(on)
Turn-On Delay Time
Q2
Q1
17
11
30
20
ns
t
r
Turn-On
Rise
Time
Q2
Q1
18
15
32
26
ns
t
d(off)
Turn-Off Delay Time
Q2
Q1
28
16
44
29
ns
t
f
Turn-Off
Fall
Time
V
DD
= 15 V,
I
D
= 1 A,
V
GS
= 4.5V,
R
GEN
= 6
Q2
Q1
13
9
23
18
ns
Q
g(TOT)
Total Gate Charge, V
GS
= 10V
Q2
Q1
28
17
39
24
nC
Q
g(TOT)
Total Gate Charge, V
GS
= 5V
Q2
Q1
15
9
21
19
nC
Q
gs
Gate-Source
Charge
Q2
Q1
4.1
2.7
nC
Q
gd
Gate-Drain
Charge
Q2
V
DS
= 15 V, I
D
= 14A

Q1
V
DS
= 15 V, I
D
= 11A
Q2
Q1
4.9
3.3
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
3.4
2.1
A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 3.4 A
(Note 2)
V
GS
= 0 V,
I
S
= 1.9 A
(Note 2)
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
Q2
Q1
0.5
0.4
0.7
0.7
1.2
V
t
rr
Diode Reverse Recovery Time
22
ns
Q
rr
Diode Reverse Recovery Charge
I
F
= 14A
dI
F
/dt = 300 A/s
Q2
15 nC
t
rr
Diode Reverse Recovery Time
16
ns
Q
rr
Diode Reverse Recovery Charge
I
F
= 11A
dI
F
/dt = 100 A/s
Q1
5 nC
NOTE :
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
3. FDQ7238AS_NL is a lead free product. The FDQ7238AS_NL marking will appear on the reel label.
4. FDQ7238AS_NF40 is a lead free product. The FDQ7238AS_NF40 marking will appear on the reel label.
a) 68C/W
when
mounted on a 1in
2
pad
of 2 oz copper (Q1).
b) 52C/W
when
mounted on a 1in
2
pad
of 2 oz copper (Q2).
c) 118C/W
when
mounted
on a minimum pad of 2 oz
copper (Q1).
d)
94C/W when mounted on
a minimum pad of 2 oz
copper (Q2).
FDQ7238
A
S
FDQ7238AS Rev A (X)
Typical Characteristics: Q2
0
10
20
30
40
50
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DR
AI
N C
URR
EN
T (
A
)
3.0V
4.0V
3.5V
V
GS
= 10V
6.0V
2.5V
4.5V
0.6
1
1.4
1.8
2.2
2.6
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
DS
(O
N
)
,
NOR
M
AL
I
Z
E
D
DRA
I
N
-
S
OU
RC
E
ON
-R
E
S
I
S
TA
NC
E
V
GS
= 3.0V
4.5V
10.0V
6.0V
3.5V
4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(O
N
)
,
NO
RM
AL
I
Z
E
D
D
R
A
I
N
-
S
O
UR
CE
O
N
-R
ES
IS
TA
NCE
I
D
= 14A
V
GS
=10V
0.004
0.008
0.012
0.016
0.02
0.024
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(O
N)
,
ON
-
R
ES
I
S
TA
NC
E (OHM)
I
D
= 7A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,

DR
AI
N
CU
RRE
N
T
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, R
EVER
SE
DRAI
N CU
RRENT
(A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDQ7238
A
S
FDQ7238AS Rev A (X)
Typical Characteristics : Q2
0
2
4
6
8
10
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-
S
O
U
R
C
E VOLTA
G
E
(V)
I
D
= 14A
V
DS
= 10V
20V
15V
0
500
1000
1500
2000
2500
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CA
P
A
C
I
T
ANC
E
(
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DR
AIN
CURR
ENT
(
A
)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 94
o
C/W
T
A
= 25
o
C
10ms
1ms
100s
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
)
,
PE
A
K
T
R
AN
SI
EN
T P
O
W
E
R
(W
)
SINGLE PULSE
R
JA
= 94C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(t)
,
NO
RM
AL
IZ
ED
EF
F
E
CT
IV
E
T
RANS
IE
NT
T
H
ER
M
A
L
R
E
S
I
S
T
ANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 94C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1d.
Transient thermal response will change depending on the circuit board design
FDQ7238
A
S
FDQ7238AS Rev A (X)
Typical Characteristics : Q2
SyncFET Schottky Body Diode
Characteristics
Fairchild's SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDQ7238AS Q2.
Figure 12. FDQ7238AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without
SyncFET(FDS6670A).

Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power dissipated in the device.
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
DSS
,
R
EVE
RSE
LEA
KAGE
CUR
R
ENT
(
A
)
T
A
= 25
o
C
T
A
= 100
o
C
T
A
= 125
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
FDQ7238
A
S
TIME : 12nS/div
CURREN
T
: 0.
8A
/div
TIME : 12nS/div
CURREN
T
: 0.
4A
/div
FDQ7238AS Rev A (X)
Typical Characteristics: Q1
0
10
20
30
40
50
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DR
AI
N C
URR
EN
T (
A
)
3.0V
4.0V
3.5V
V
GS
= 10V
6.0V
2.5V
4.5V
0.6
1
1.4
1.8
2.2
2.6
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
DS
(O
N
)
,
NOR
M
AL
I
Z
E
D
DRA
I
N
-
S
OU
RC
E
ON
-R
E
S
I
S
TA
NC
E
V
GS
= 3.0V
4.5V
10.0V
6.0V
3.5V
4.0V
Figure 15. On-Region Characteristics.
Figure 16. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N
)
, NO
RM
AL
IZ
ED
DRAI
N-S
O
U
RCE ON
-RE
S
IS
TA
NCE
I
D
= 11A
V
GS
= 10V
0.008
0.012
0.016
0.02
0.024
0.028
0.032
0.036
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(O
N)
,
ON
-
R
ES
I
S
TA
NC
E (OHM)
I
D
= 5.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 17. On-Resistance Variation with
Temperature.
Figure 18. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,

DR
AI
N
CU
RRE
N
T
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, R
EVER
SE
DRAI
N CU
RRENT
(A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 19. Transfer Characteristics.
Figure 20. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDQ7238
A
S
FDQ7238AS Rev A (X)
Typical Characteristics: Q1
0
2
4
6
8
10
0
4
8
12
16
20
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-
S
O
U
R
C
E VOLTA
G
E
(V)
I
D
= 11A
V
DS
= 10V
20V
15V
0
300
600
900
1200
1500
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CA
P
A
C
I
T
ANC
E
(
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 21. Gate Charge Characteristics.
Figure 22. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DR
AIN
CURR
ENT
(
A
)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 118
o
C/W
T
A
= 25
o
C
10ms
1ms
100s
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
)
,
PE
A
K
T
R
AN
SI
EN
T P
O
W
E
R
(W
)
SINGLE PULSE
R
JA
= 118C/W
T
A
= 25C
Figure 23. Maximum Safe Operating Area.
Figure 24. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t
)
,

NORM
AL
I
Z
ED
EF
F
E
C
T
I
V
E
T
R
AN
SI
E
N
T
T
H
ER
M
A
L
R
ESI
ST
A
N
C
E
R
JA
(t) = r(t) * R
JA
R
JA
= 118 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 25. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c
Transient thermal response will change depending on the circuit board design.
FDQ7238
A
S
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
Rev. I16
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
WireTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM