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Электронный компонент: FDR4420A

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June 1998
FDR4420A
Single N-Channel, Logic Level, PowerTrench
TM
MOSFET

General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDR4420A
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Draint Current - Continuous
(Note 1a)
11
A
- Pulsed
40
P
D
Maximum Power Dissipation
(Note 1a)
1.8
W
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
20
C/W
FDR4420 Rev.D
11 A, 30 V. R
DS(ON)
= 0.009
@ V
GS
= 10 V,
R
DS(ON)
= 0.013
@ V
GS
= 4.5 V.
Fast switching speed.
Low gate charge.
Small footprint 38% smaller than a standard SO-8.
Low profile package(1mm thick).
Power handling capability similar to SO-8.
The SuperSOT-8 family of N-Channel Logic Level MOSFETs
have been designed to provide a low profile, small footprint
alternative to industry standard SO-8 little foot type product.
These MOSFETs are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been tailored to
minimize the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where small package size is required
without compromising power handling and fast switching.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
1
5
6
7
8
4
3
2
D
S
D
D
S
D
D
G
SuperSOT -8
TM
pin
1
4420A
1998 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
30
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
20
mV /
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
A
T
J
= 55C
10
A
I
GSS
Gate - Body Leakage Current
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSS
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
/
T
J
Gate Threshold Voltage Temp.Coefficient
I
D
= 250 A, Referenced to 25
o
C
-6
mV /
o
C
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.4
3
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 11A
0.0075
0.009
T
J
=125C
0.0125
0.016
V
GS
= 4.5 V, I
D
= 9 A
0.01
0.013
I
D(ON)
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
30
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 11 A
25
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
2560
pF
C
oss
Output Capacitance
560
pF
C
rss
Reverse Transfer Capacitance
280
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 1
11
20
ns
t
r
Turn - On Rise Time
15
27
ns
t
D(off)
Turn - Off Delay Time
25
40
ns
t
f
Turn - Off Fall Time
21
34
ns
Q
g
Total Gate Charge
V
DS
= 15 V, I
D
= 9.3 A,
V
GS
= 5 V
23
33
nC
Q
gs
Gate-Source Charge
7
nC
Q
gd
Gate-Drain Charge
11
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
1.5
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 1.5 A
(Note 2)
0.7
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by design
while R
CA
is determined by the user's board design. R
JA
shown below for single device operation on FR-4 board in still air.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDR4420 Rev.D
b. 125
O
C/W on a 0.026 in
2
of pad
of 2oz copper.
a. 70
O
C/W on a 1 in
2
pad of 2oz
copper.
c. 135
O
C/W on a 0.005 in
2
of pad
of 2oz copper.
FDR4420 Rev.D
0
0.4
0.8
1.2
1.6
2
0
8
16
24
32
40
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
3.5V
4.0V
4.5V
DS
D
V =10V
GS
6.0V
3.0V
2.5V
0
8
16
24
32
40
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 3.0V
GS
D
R , NORMALIZED
DS(ON)
10
6.0
5.0
4.5
3.5
4.0
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
V =10V
GS
I = 11A
D
R NORMALIZED
DS(ON)
Figure 3. On-Resistance Variation
with Temperature.
1
1.5
2
2.5
3
3.5
4
0
10
20
30
40
50
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
25C
125C
V = 10V
DS
GS
D
T = -55C
J
Figure 5. Transfer Characteristics.
2
4
6
8
10
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
V ,GATE-SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
I = 5.5A
D
GS
R ,(
OHM
)
DS(ON)
T = 125 C
A
o
25 C
o
Figure 4. On Resistance Variation with
Gate-To-Source Voltage.
0
0.2
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
5
40
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
T = 125C
J
25C
-55C
V =0V
GS
SD
S
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDR4420 Rev.D
Typical Electrical Characteristics
(continued)
Figure 9. Maximum Safe Operating Area.
0
10
20
30
40
50
60
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I = 11A
D
V = 5V
DS
15V
10V
Figure 7. Gate Charge Characteristics.
0.1
0.2
0.5
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
5
20
100
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
1s
100ms
10s
10ms
RDS(ON) LIMIT
1ms
100us
DC
V = 10V
SINGLE PULSE
R = 135C/W
T = 25C
GS
A
JA
Figure 10. Single Pulse Maximum Power
Dissipation.
0.0001
0.001
0.01
0.1
1
10
100
300
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R = 135C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
r(t), NORMALIZED EFFECTIVE
Figure 11.Transient Thermal Response Curve
.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
0.1
0.3
1
3
10
30
200
500
1000
2000
3000
5000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C iss
f = 1 MHz
V = 0V
GS
C oss
C rss
Figure 8. Capacitance Characteristics.
0.0001
0.001
0.01
0.1
1
10
100 300
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R = 135C/W
T = 25C
JA
A