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Электронный компонент: FDR8305

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FD8305N
FD8305N Rev. C
FDR8305N
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
Load switch
Motor driving
Power Management
November 1999
Features
4.5 A, 20 V. R
DS(ON)
= 0.022
@ V
GS
= 4.5 V
R
DS(ON)
= 0.028
@ V
GS
= 2.5 V.
Low gate charge (16.2nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
Small footprint (38% smaller than a standard SO-8);low
profile package (1 mm thick); power handling capability
similar to SO-8.
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source Voltage
8
V
I
D
Drain Current
- Continuous
(Note 1a)
4.5
A
- Pulsed
20
P
D
Power Dissipation for Single Operation
(Note 1a)
0.8
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
156
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.8305
FDR8305N
13''
12mm
3000 units
D1
D2
D2
D1
G1
G2
S1
S2
SuperSOT -8
TM
1
5
7
8
6
4
3
2
FD8305N
FD8305N Rev. C
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
20
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to
25
C
14
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
1
A
I
GSSF
Gate-Body Leakage Current,
Forward
V
GS
= 8 V, V
DS
= 0 V
100
nA
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= -8 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
0.4
0.85
1.5
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to
25
C
-3
mV/
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 4.5 V, I
D
= 4.5 A
V
GS
=4.5 V, I
D
=4.5 A, T
J
=125
C
V
GS
= 2.5 V, I
D
= 4 A
0.015
0.026
0.020
0.022
0.040
0.028
I
D(on)
On-State Drain Current
V
GS
= 4.5 V, V
DS
= 5 V
10
A
g
FS
Forward Transconductance
V
DS
= 4.5 V, I
D
= 4.5 A
24
S
Dynamic Characteristics
C
iss
Input Capacitance
1600
pF
C
oss
Output Capacitance
380
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
200
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
12
22
ns
t
r
Turn-On Rise Time
15
27
ns
t
d(off)
Turn-Off Delay Time
35
55
ns
t
f
Turn-Off Fall Time
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
18
30
ns
Q
g
Total Gate Charge
16.2
23
nC
Q
gs
Gate-Source Charge
2.5
nC
Q
gd
Gate-Drain Charge
V
DS
= 10 V, I
D
= 4.5 A,
V
GS
= 4.5 V
5.5
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
0.67
A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 0.67 A
(Note
2)
0.65
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
JC
is guaranteed by design while R
CA
is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy equally.
156
O
C/W on a minimum mounting
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FD8305N
FD8305N Rev. C
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
0.8
1
1.2
1.4
1.6
1.8
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
,
NO
RM
AL
I
Z
E
D
DRA
IN
-
S
O
URCE
O
N
-
R
E
S
I
S
T
A
N
C
E
V
GS
= 2.0V
2.5V
4.0V
3.5V
4.5V
3.0V
0
0.01
0.02
0.03
0.04
0.05
0.06
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, ON
-
R
ES
IS
T
A
N
C
E
(
O
H
M
)
I
D
= 2.3A
T
A
= 125
o
C
T
A
= 25
o
C
0
4
8
12
16
20
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DRA
I
N
CURRE
NT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, R
E
V
E
R
S
E
DR
AI
N CU
RRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
,
NO
RM
AL
I
Z
E
D
DR
AI
N-
S
O
URCE
O
N
-RE
S
I
S
TA
NCE
I
D
= 4.5A
V
GS
= 4.5V
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRA
I
N

CURRE
NT (A
)
V
GS
= 4.5V
3.0V
2.5V
2.0V
1.5V
FD8305N
FD8305N Rev. C
Typical Characteristics
(continued)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0
500
1000
1500
2000
2500
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACI
TA
N
C
E
(p
F)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
0
1
2
3
4
5
0
4
8
12
16
20
Q
g
, GATE CHARGE (nC)
V
GS
,
GA
T
E
-SO
U
R
C
E VOL
T
A
G
E
(V)
I
D
= 4.5A
V
DS
= 5V
10V
15V
0
10
20
30
40
50
0.0001
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
PO
W
E
R
(
W
)
SINGLE PULSE
R
JA
=156
o
C/W
T
A
=25
o
C
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
R
A
N
S
I
E
N
T
T
H
ER
M
A
L
R
ESIST
A
N
C
E
1
Single Pulse
0.05
0.02
0.2
r
(
t
)
,
NO
RM
AL
I
Z
E
D

E
F
F
E
C
T
I
V
E
D = 0.5
0.1
0.01
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R = 156 C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
2
JA
A
J
P(pk)
t
1
t
2
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRA
I
N
CURRE
NT (A)
R
DS(ON)
LIMIT
DC
10s
1s
100ms
10ms
1ms
100
s
V
GS
= 4.5 V
SINGLE PULSE
R
JA
=156
o
C/W
T
A
=25
o
C
SSOT-8 Packaging
Configuration:
Figure 1.0
Components
Lead er Tape
500mm mi nimum or
62 empty poc kets
Traile r Tape
300mm mi nimum or
38 empty pockets
SSOT-8 Tape Leader and Trailer
Configuration:
Figur e 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SSOT-8 Packaging Information
Standard
(no
f l ow c ode )
D84Z
Packaging type
Reel Size
TNR
13" D ia
TNR
7" Dia
Qty per Reel/Tube/Bag
3,000
500
Box Dimension (mm)
343x64x343
184x187x47
Max qty per Box
6,000
1,000
Weight per unit (gm)
0.0416
0.0416
Weight per Reel (kg)
0.5615
0.0980
184mm x 187mm x 47mm
Pizza Box fo r D84Z Option
F63TNR
Label
F63TNR Labe l
F63TNR Labe l sa mpl e
343mm x 342mm x 64mm
Intermediate bo x fo r Standar d
and L 99Z Opti ons
F63TNR
Label
LOT: CBVK741B019
FSID: FDR835N
D/C1: D9842 QTY1:
SPEC REV:
SPEC:
QTY: 3000
D/C2:
QTY2:
CPN:
N/F: F (F63TNR)3
SSOT-8 Unit Orientation
F852
831N
F852
831N
F852
831N
F852
831N
F852
831N
Pin 1
F63TNR Labe l
Anti static Cover Tape
Customized La bel
Static Dissi pat ive
Emboss ed Carrier Tape
Packaging Description:
SSOT-8 parts are shipped in tape. The carrier tape is
made from a di ssipat ive (carbo n filled) po ly carbon ate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film ,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped w ith
3,000 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 unit s per 7" or
177cm diameter reel. This and some other options are
further described in the Packagin g Information table.
These full reels are in di vidu ally barcod e labeled and
placed inside a standard intermediate box (ill ustrated in
figure 1.0) made of recyclable corrugated brow n paper.
One box contains two reels maximum. And t hese boxes
are placed ins ide a barcode labeled shipp ing bo x whic h
comes in di fferent sizes depend in g on t he nu mber of parts
shippe d.
SuperSOT
TM
-8 Tape and Reel Data and Package Dimensions
August 1999, Rev. C
1998 Fairchild Semiconductor Corporation
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
SSOT-8
(12mm)
4.47
+/-0.10
5.00
+/-0.10
12.0
+/-0.3
1.55
+/-0.05
1.50
+/-0.10
1.75
+/-0.10
10.25
mi n
5.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
1.37
+/-0.10
0.280
+/-0.150
9.5
+/-0.025
0.06
+/-0.02
P1
A0
D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
12mm
7" Dia
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
5.906
150
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 0.606
11.9 15.4
12mm
13" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 0.606
11.9 15.4
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes : A0, B0, and K0 di mens ions are deter mined with r espec t to t he EIA/Jedec RS-481
rotati ona l and lateral movement requi remen ts (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Si de or Front Sectional View)
Component Rotation
User Direction of Feed
SSOT-8 Embossed Carrier Tape
Configuration:
Figur e 3.0
SSOT-8 Reel Configuration: Figur e 4.0
SuperSOT
TM
-8 Tape and Reel Data and Package Dimensions, continued
July 1999, Rev. C
SuperSOT
TM
-8 (FS PKG Code 34, 35)
1 : 1
Scale 1:1 on letter size paper
Di mensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0416
SuperSOT
TM
-8 Tape and Reel Data and Package Dimensions, continued
September 1998, Rev. A
TRADEMARKS
ACExTM
CoolFETTM
CROSSVOLTTM
E
2
CMOS
TM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
SyncFETTM
TinyLogicTM
UHCTM
VCXTM
ISOPLANARTM
MICROWIRETM
POPTM
PowerTrench
QFETTM
QSTM
Quiet SeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
Rev. D