2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
May 2005
FDS4410A Rev. B
FDS4410A Single N-Channel,
Logic-Le
vel,
P
o
werT
renc
h
MOSFET
FDS4410A
Single N
-
Channel, Logic-Level, PowerTrench
MOSFET
Features
10 A, 30 V.
R
DS(ON)
= 13.5 m
@ V
GS
= 10 V
R
DS(ON)
= 20 m
@ V
GS
= 4.5 V
Fast switching speed
Low gate charge
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability
General Description
This N-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor's advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Absolute Maximum Ratings
T
A
=25C unless otherwise noted
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
DrainSource Voltage
30
V
V
GSS
GateSource Voltage
20
V
I
D
Drain Current
Continuous
(Note 1a)
10
A
Pulsed
50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.0
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
(Note 1b)
125
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4410A
FDS4410A
13"
12mm 2500
units
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
5
3
6
2
7
1
8
2
www.fairchildsemi.com
FDS4410A Rev. B
FDS4410A Single N-Channel,
Logic-Le
vel,
P
o
werT
renc
h
MOSFET
Electrical Characteristics
T
A
= 25C unless otherwise noted
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
2. Test: Pulse Width < 300s, Duty Cycle < 2.0%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 A, Referenced to 25
C
25
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55C
10
I
GSS
GateBody Leakage
V
GS
=
20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.9
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 A, Referenced to 25
C
5
mV/
C
R
DS(on)
Static DrainSource OnResistance
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 9 A
V
GS
= 10 V, I
D
= 10 A, T
J
= 125
C
9.8
12.0
13.7
13.5
20
23
m
I
D(on)
OnState Drain Current
V
GS
= 10 V, V
DS
= 5 V
50
A
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 10 A
48
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V, f = 1.0 MHz
1205
pF
C
oss
Output Capacitance
290
pF
C
rss
Reverse Transfer Capacitance
115
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
2.4
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
V
DS
= 15 V, I
D
= 1 A, V
GS
= 10 V,
R
GEN
= 6
9
19
ns
t
r
TurnOn Rise Time
5
10
ns
t
d(off)
TurnOff Delay Time
28
44
ns
t
f
TurnOff Fall Time
9
19
ns
Q
g
Total Gate Charge
V
DD
= 15 V, I
D
= 10 A, V
GS
= 5 V
12
16
nC
Q
gs
GateSource Charge
3.4
nC
Q
gd
GateDrain Charge
4.0
nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
2.1
A
V
SD
DrainSource Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.1 A (Note 2)
0.74
1.2
V
t
rr
Diode Reverse Recovery Time
I
F
= 10A, d
iF
/d
t
= 100 A/s
24
nS
Q
rr
Diode Reverse Recovery Charge
27
nC
a) 50C/W when mounted on a
1 in
2
pad of 2 oz copper
b) 125C/W when mounted on
a minimum pad.
Scale 1 : 1 on letter size paper
3
www.fairchildsemi.com
FDS4410A Rev. B
FDS4410A Single N-Channel,
Logic-Le
vel,
P
o
werT
renc
h
MOSFET
Typical Characteristics
0
10
20
30
40
50
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRAIN
CURRENT
(A)
3.0V
6.0V
3.5.V
4.0V
V
GS
= 10V
4.5V
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
DS(ON)
,
NORMALIZED
DRAIN-SOURCE
ON-RESISTANC
E
V
GS
= 3.0V
3.5V
4.5V
10V
6.0V
4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
C)
R
DS(ON)
,
NORMALIZED
DRAIN-SOURCE
ON-RESISTANCE
I
D
= 10A
V
GS
= 10V
0
0.01
0.02
0.03
0.04
0.05
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
,
ON-RESISTANCE
(OHM)
I
D
= 5 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DRAIN
CURRENT
(A)
T
A
= 125
o
C
-55
o
C
V
DS
= 5V
25
o
C
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
REVERSE
DRAIN
CURRENT
(A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
4
www.fairchildsemi.com
FDS4410A Rev. B
FDS4410A Single N-Channel,
Logic-Le
vel,
P
o
werT
renc
h
MOSFET
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
V
GS
,
GATE-SOURCE
VOLTAGE
(V
)
I
D
= 10 A
V
DS
= 10V
20V
15V
0
400
800
1200
1600
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE
(pF
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRAIN
CURRENT
(A)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
100
s
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
P(pk),
PEAK
TRANSIENT
POWER
(W)
SINGLE PULSE
R
JA
= 125
C/W
T
A
= 25
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIM E (sec)
r(t),
NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESISTANCE
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the cir cuit board design.
R
JA
(t) = r(t) * R
JA
R
JA
= 125
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
P(pk)
t
1
t
2
5
www.fairchildsemi.com
FDS4410A Rev. B
FDS4410A Single N-Channel,
Logic-Le
vel,
P
o
werT
renc
h
MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
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