FDS4435
FDS4435 Rev. D
FDS4435
P-Channel Logic Level PowerTrench
TM
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
This device is well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
DC/DC converter
Load switch
Motor drives
June 1999
Features
-8.8 A, -30 V. R
DS(ON)
= 0.020
@ V
GS
= -10 V
R
DS(ON)
= 0.035
@ V
GS
= -4.5 V
Low gate charge (17nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
1999 Fairchild Semiconductor Corporation
$EVROXWH 0D[LPXP 5DWLQJV
U
$
2!$8yrurvrrq
6\PERO
3DUDPHWHU
5DWLQJV
8QLWV
W
'66
9hvTprWyhtr
"
W
W
*66
BhrTprWyhtr
!
W
D
'
9hv8r 8v
Ir h
''
6
Qyrq
$
Q
'
Qr9vvhvsTvtyrPrhv
Ir h
!$
X
Ir i
!
Ir p
U
-
U
VWJ
PrhvthqThtrEpvUrrhrShtr
$$ $
8
7KHUPDO &KDUDFWHULVWLFV
S
-$
UurhySrvhprEpv6ivr
Ir h
$
8X
S
-&
UurhySrvhprEpv8hr
Ir
!$
8X
3DFNDJH 0DUNLQJ DQG 2UGHULQJ ,QIRUPDWLRQ
'HYLFH 0DUNLQJ
'HYLFH
5HHO 6L]H
7DSH :LGWK
4XDQWLW\
A9T##"$
A9T##"$
"
!
!$v
6
'
6
6
62
'
'
'
*
FDS4435
FDS4435 Rev. D
(OHFWULFDO &KDUDFWHULVWLFV
U
$
2!$8yrurvrrq
6\PERO
3DUDPHWHU
7HVW &RQGLWLRQV
0LQ 7\S 0D[ 8QLWV
2II &KDUDFWHULVWLFV
7W
'66
9hvTpr7rhxqWyhtr
W
*6
2WD
'
2!$
6
"
W
7W
'66
U
-
7rhxqWyhtrUrrhr
8rssvpvr
D
'
2!$
6Srsrrprq!$
8
!!
W
8
D
'66
arBhrWyhtr9hv8r
W
'6
2!#WW
*6
2W
6
D
*66)
Bhr7qGrhxhtr8r
Ahq
W
*6
2!WW
'6
2W
6
D
*665
Bhr7qGrhxhtr8r
Srrr
W
*6
2!WW
'6
2W
6
2Q &KDUDFWHULVWLFV
Ir!
W
*6WK
BhrUuruyqWyhtr
W
'6
2W
*6
D
'
2!$
6
$
"
W
W
*6WK
U
-
BhrUuruyqWyhtr
Urrhr8rssvpvr
D
'
2!$
6Srsrrprq!$
8
#
W
8
S
'6RQ
Thvp9hvTpr
PSrvhpr
W
*6
2 WD
'
2''6
W
*6
2 WD
'
2''6U
-
2 !$
8
W
*6
2#$WD
'
2%&6
&
!"
!#
!
"!
"$
D
'RQ
PThr9hv8r
W
*6
2 WW
'6
2$W
#
6
t
)6
AhqUhpqphpr
W
'6
2 WD
'
2$6
!
T
'\QDPLF &KDUDFWHULVWLFV
8
LVV
D8hhpvhpr
%
A
8
RVV
P8hhpvhpr
#%$
A
8
UVV
SrrrUhsr8hhpvhpr
W
'6
2 $WW
*6
2W
s2 HC
!
A
6ZLWFKLQJ &KDUDFWHULVWLFV
Ir!
GRQ
UP9ryhUvr
'
U
UPSvrUvr
"
!$
GRII
UPss9ryhUvr
'"
!
I
UPssAhyyUvr
W
''
2 $WD
'
2 6
W
*6
2 WS
*(1
2%
"'
%
R
J
UhyBhr8uhtr
&
!$
8
R
JV
BhrTpr8uhtr
$
8
R
JG
Bhr9hv8uhtr
W
'6
2 $WD
'
2'$6
W
*6
2$W
&
8
'UDLQ6RXUFH 'LRGH &KDUDFWHULVWLFV DQG 0D[LPXP 5DWLQJV
D
6
Hhv8v9hvTpr9vqrAhq8r
!
6
W
6'
9hvTpr9vqrAhq
Wyhtr
W
*6
2WD
6
2! 6
Ir!
&"
!
W
Notes:
1: R
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
a) 50
C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105
C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125
C/W on a minimum
mounting
pad.
FDS4435
FDS4435 Rev. D
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variationwith Source Current
and Temperature.
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage
'
!
#
%
'
!
!!
!#
!
"
#
$
D
'
9S6DI8VSS@IU6
S
'
6
2
1
I
P
S
H
6
G
D
a
@
9
9
S
6
D
I
T
P
V
S
8
@
P
I
S
@
T
D
T
U
6
I
8
@
W
*6
2"$W
$W
%W
&W
'W
W
#$W
#W
!
"
#
$
!
"
#
$
W
'6
9S6DITPVS8@WPGU6B@W
D
'
9
S
6
D
I
8
V
S
S
@
I
U
6
"W
%W
$W
#$W
#W
"$W
W
*6
2 W
!
"
#
$
%
&
!
#
%
'
W
*6
B6U@UPTPVS8@WPGU6B@W
S
'
6
2
1
P
I
S
@
T
D
T
U
6
I
8
@
P
C
H
D
'
2##6
U
$
2 !$
R
8
U
$
2!$
R
8
!
"
#
$
!
"
#
$
W
*6
B6U@UPTPVS8@WPGU6B@W
D
'
9
S
6
D
I
8
V
S
S
@
I
U
6
U
$
2$$
R
8
!$
R
8
!$
R
8
W
'6
2$W
!
#
%
'
!
#
W
T9
7P9`9DP9@APSX6S9WPGU6B@W
D
6
S
@
W
@
S
T
@
9
S
6
D
I
8
V
S
S
@
I
U
6
W
*6
2W
U
$
2 !$
R
8
!$
R
8
$$
R
8
%
'
!
#
%
$
!$
!$
$
&$
!$
$
U
-
EVI8UDPIU@HQ@S6UVS@
R
8
S
'
6
2
1
I
P
S
H
6
G
D
a
@
9
9
S
6
D
I
T
P
V
S
8
@
P
I
S
@
T
D
T
U
6
I
8
@
D
'
2''6
W
*6
2 W
FDS4435
FDS4435 Rev. D
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
"
!
$
!
$
!
$
UDH @ rp
U
S
6
I
T
D
@
I
U
U
C
@
S
H
6
G
S
@
T
D
T
U
6
I
8
@
I
P
S
H
6
G
D
a
@
9
@
A
A
@
8
U
D
W
@
Tvtyr Qyr
92$
$
!
!
98pyr92
S2S
S2 !$8 X
E 6
E 6
E 6
UU2Q S
E6
6
E
Qx
$
$
!
!$
$
$
!
!$
"
W
'6
9S6DIUPTPVS8@WPGU6B@W
8
6
Q
6
8
D
U
6
I
8
@
A
8
,66
8
266
8
566
s2 HC
W
*6
2W
!
#
%
'
$
$
!
!$
"
"$
R
J
B6U@8C6SB@8
W
*
6
B
6
U
@
T
P
V
S
8
@
W
P
G
U
6
B
@
W
D
'
2''6
W
'6
2$W
W
$W
W
'6
9S6DITPVS8@WPGU6B@W
D
'
9
S
6
D
I
8
V
S
S
@
I
U
6
98
S
'621
GDHDU
W
*6
2 W
TDIBG@QVGT@
S
-$
2 !$
R
8X
U
$
2!$
R
8
!
"
#
$
TDIBG@QVGT@UDH@T@8
Q
P
X
@
S
X
TDIBG@QVGT@
S
-$
2 !$
R
8X
U
$
2!$
R
8
SOIC(8lds) Packaging
Configuration: Figure 1.0
Components
Leader Tape
1680mm minimum or
210 empty pockets
Trailer Tape
640mm minimum or
80 empty pockets
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packaging Option
SOIC (8lds) Packaging Information
Standard
(no flow code)
L86Z
F011
Packaging type
Reel Size
TNR
13" Dia
Rail/Tube
-
TNR
13" Dia
Qty per Reel/Tube/Bag
2,500
95
4,000
Box Dimension (mm)
343x64x343
530x130x83
343x64x343
Max qty per Box
5,000
30,000
8,000
D84Z
TNR
7" Dia
500
184x187x47
1,000
Weight per unit (gm)
0.0774
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
0.9696
0.1182
F63TN Label
ESD Label
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
LOT: CBVK741B019
FSID: FDS9953A
D/C1: D9842 QTY1:
SPEC REV:
SPEC:
QTY: 2500
D/C2:
QTY2:
CPN:
N/F: F (F63TNR)3
F852
NDS
9959
SOIC-8 Unit Orientation
F
85
2
NDS
99
59
Pin 1
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Antistatic Cover Tape
ESD Label
EL ECT RO ST AT IC
SEN SIT IVE DEVI CES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Customized
Label
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
F
85
2
NDS
99
59
F
85
2
NDS
99
59
F
85
2
NDS
99
59
SO-8 Tape and Reel Data and Package Dimensions
July 1999, Rev. B
PDF 
ZIP