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FDS4435A
FDS4435A Rev.
D
FDS4435A
P-Channel Logic Level PowerTrench
MOSFET
October 2001
Features
-9 A, -30 V. R
DS(ON)
= 0.017 W
@ V
GS
= -10 V
R
DS(ON)
= 0.025 W
@ V
GS
= -4.5 V
Low gate charge (21nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
2001
Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current
- Continuous
(Note 1a)
-9
A
- Pulsed
-50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS4435A
FDS4435A
13''
12mm
2500 units
S
D
S
S
SO-8
D
D
D
G
5
6
8
3
1
7
4
2
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductors advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for notebook computer appli-
cations: load switching and power management, battery
charging circuits, and DC/DC conversion.
FDS4435A
FDS4435A Rev.
D
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250
A
-30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= -250
A,Referenced to 25
C
-26
mV/
C
V
DS
= -24 V, V
GS
= 0
-1
I
DSS
Zero Gate Voltage Drain Current
T
J
= 125
C
-10
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250
A -1 -1.7 -2 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= -250
A,Referenced to 25
C
4.2
mV/
C
V
GS
= -10 V, I
D
= -9 A
0.015
0.017
T
J
= 125
C
0.021
0.030
R
DS(on)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -7 A
0.023
0.025
I
D(on)
On-State Drain Current
V
GS
= -10 V, V
DS
= -5 V
-40
A
g
FS
Forward Transconductance
V
DS
= -10 V, I
D
= -9 A
25
S
Dynamic Characteristics
C
iss
Input Capacitance
2010
pF
C
oss
Output Capacitance
590
pF
C
rss
Reverse Transfer Capacitance
V
DS
= -15 V, V
GS
= 0 V
f = 1.0 MHz
260
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
12
22
ns
t
r
Turn-On Rise Time
15
27
ns
t
d(off)
Turn-Off Delay Time
100
140
ns
t
f
Turn-Off Fall Time
V
DD
= -15 V, I
D
= -1 A
V
GS
= -10 V, R
GEN
= 6
55
80
ns
Q
g
Total Gate Charge
21
30
nC
Q
gs
Gate-Source Charge
6
nC
Q
gd
Gate-Drain Charge
V
DS
= -15 V, I
D
= -9 A
V
GS
= -5 V,
8
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
-2.1
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
0.75
-1.2
V
t
rr
Source-Drain Reverse Recovery Time
I
F
= -10 A, dl
F
/dt = 100 A/
S
36
80
ns
Notes:
1: R
qJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
qJC
is guaranteed by design while R
qCA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
a) 50 C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105 C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125 C/W when mounted
on a minimum pad.
FDS4435A
FDS4435A Rev.
D
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
10
20
30
40
50
-I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
,
NO
RM
ALI
Z
E
D
DR
A
I
N-
S
O
URC
E
O
N
-
R
E
S
I
S
T
A
N
C
E
V
GS
= -3.5V
-5.0V
-6.0V
-7.0V
-8.0V
-10V
-4.5V
-4.0V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
,
RE
V
E
RS
E
DR
AI
N CU
RR
E
N
T
(
A
)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
0
10
20
30
40
0
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
,
DRA
I
N
CURRE
NT
(
A
)
T
J
= -55
O
C
25
O
C
125
O
C
V
DS
= -5V
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N
)
, ON RE
S
I
S
T
A
NCE
(
O
HM
)
T
J
= 125
O
C
T
J
= 25
O
C
I
D
= -4.5A
-V , DRAIN-SOURCE VOLTAGE (V)
-
I
,
DRA
I
N
-
S
O
U
RC
E
C
URR
E
N
T
(
A
)
DS
D
-4.5V
-2.5V
-4.0V
-6.0V
-3.5V
-3.0V
V = -10V
GS
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
O
C)
N
O
R
M
ALI
Z
ED
O
N
-
R
ESI
ST
AN
C
E
V
GS
= -10V
I
D
= -9A
FDS4435A
FDS4435A Rev.
D
Typical Characteristics
(continued)
0.001
0.01
0.1
1
10
100
300
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
PO
W
E
R
(W
)
SINGLE PULSE
R =125C/W
T = 25C
JA
A
Figure 7. Gate-Charge Characteristics
Figure 8. Capacitance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TI M E (s e c )
T
R
AN
SI
EN
T
T
H
E
R
M
A
L
R
E
S
I
ST
AN
C
E
r
(
t
),
N
O
R
M
AL
I
Z
ED
E
F
F
E
C
T
I
V
E
1
S i n g l e P u l s e
D = 0.5
0.1
0 .0 5
0 .0 2
0.0 1
0.2
D u t y C y c l e, D = t /t
1
2
R (t) = r(t) * R
R = 125C / W
J A
J A
J A
T - T = P * R ( t)
JA
A
J
P(p k )
t
1
t
2
0
500
1000
1500
2000
2500
0
5
10
15
20
25
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
A
PA
C
I
T
A
N
C
E (p
F
)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
0
2
4
6
8
10
0
5
10
15
20
25
30
35
Q
g
, GATE CHARGE (nC)
-V
GS
,
GA
T
E
-SOU
R
C
E
VOL
T
A
G
E (V)
I
D
= -8.8A
V
DS
= -5V
-10V
-15V
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
,
DRA
I
N
CURRE
NT (A
)
DC
10s
1s
100ms
10ms
1ms
100
s
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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