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Электронный компонент: FDS4559

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April 2002

2000 Fairchild Semiconductor Corporation
FDS4559 Rev C1(W)
FDS4559
60V Complementary PowerTrench
MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild's advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Power management
LCD backlight inverter
Features
Q1: N-Channel
4.5 A, 60 V
R
DS(on)
= 55 m
@ V
GS
= 10V
R
DS(on)
= 75 m
@ V
GS
= 4.5V
Q2: P-Channel
3.5 A, 60 V R
DS(on)
= 105 m
@ V
GS
= 10V
R
DS(on)
= 135 m
@ V
GS
= 4.5V
S
D
S
S
SO-8
D
D
D
G
D1
D1
D2
D2
S1
G1
S2
G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol Parameter
Q1
Q2 Units
V
DSS
Drain-Source
Voltage
60
60
V
V
GSS
Gate-Source
Voltage
20
20
V
I
D
Drain Current - Continuous
(Note 1a)
4.5
3.5 A
-
Pulsed
20
20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.2
(Note 1c)
1
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +175
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4559 FDS4559 13"
12mm 2500
units
FDS4559
FDS4559 Rev C1(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter Test
Conditions
Type Min
Typ Max Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single
Pulse
Drain-Source
Avalanche Energy
V
DD
= 30 V,
I
D
= 4.5 A
Q1
90
mJ
I
AR
Maximum
Drain-Source
Avalanche Current
Q1
4.5
A
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 A
V
GS
= 0 V, I
D
= 250 A
Q1
Q2
60
60
V
BV
DSS
T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 250 A, Referenced to 25
C
I
D
= 250 A, Referenced to 25
C
Q1
Q2

58
49
mV/
C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 48 V, V
GS
= 0 V
V
DS
= 48 V, V
GS
= 0 V
Q1
Q2
1
1
A
I
GSS
Gate-Body
Leakage V
GS
= +20 V, V
DS
= 0 V
V
GS
= +20 V, V
DS
= 0 V
Q1
Q2
+100
+100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
V
DS
= V
GS
, I
D
= 250 A
Q1
Q2
1
1
2.2
1.6
3
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 A, Referenced to 25
C
I
D
= 250 A, Referenced to 25
C
Q1
Q2
5.5
4
mV/
C
Q1 42
72
55
55
94
75
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 4.5 A
V
GS
= 10 V, I
D
= 4.5 A, T
J
= 125
C
V
GS
= 4.5 V, I
D
= 4 A
V
GS
= 10 V, I
D
= 3.5 A
V
GS
= 10 V, I
D
= 3.5 A, T
J
= 125
C
V
GS
= 4.5 V, I
D
= 3.1 A
Q2
82
130
105
105
190
135
m
I
D(on)
On-State
Drain
Current V
GS
= 10 V, V
DS
= 5 V
V
GS
= 10 V, V
DS
= 5 V
Q1
Q2
20
20
A
g
FS
Forward
Transconductance
V
DS
= 10 V, I
D
= 4.5 A
V
DS
= 5 V, I
D
= 3 5 A
Q1
Q2
14
9
S
Dynamic Characteristics
C
iss
Input
Capacitance
Q1
Q2
650
759
pF
C
oss
Output
Capacitance
Q1
Q2
80
90
pF
C
rss
Reverse
Transfer
Capacitance
Q1
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Q2
V
DS
= 30 V, V
GS
= 0 V,
f = 1.0 MHz
Q1
Q2
35
39
pF
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
Q1
Q2
11
7
20
14
ns
t
r
Turn-On
Rise
Time
Q1
Q2
8
10
18
20
ns
t
d(off)
Turn-Off
Delay
Time
Q1
Q2
19
19
35
34
ns
t
f
Turn-Off Fall Time
Q1
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6

Q2
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
Q1
Q2
6
12
15
22
ns
Q
g
Total Gate Charge
Q1
Q2
12.5
15
18
21
nC
Q
gs
Gate-Source
Charge
Q1
Q2
2.4
2.5
nC
Q
gd
Gate-Drain
Charge
Q1
V
DS
= 30 V, I
D
= 4.5 A, V
GS
= 10 V

Q2
V
DS
= 30 V, I
D
= 3.5 A, V
GS
= 10V
Q1
Q2
2.6
3.0
nC
FDS4559
FDS4559 Rev C1(W)

Electrical Characteristics
(continued)
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
1.3
1.3
A
V
SD
Drain-Source
Diode
Forward
Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
Q1
Q2
0.8
0.8
1.2
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 78C/W when
mounted on a
0.5 in
2
pad of 2 oz
copper
b) 125C/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDS4559
FDS4559 Rev C1(W)
Typical Characteristics: Q2
0
3
6
9
12
15
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
-6.0V
-5.0V
-4.5V
-3.5V
V
GS
= -10V
-4.0V
-2.5V
-3.0V
0.8
1
1.2
1.4
1.6
1.8
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANCE
V
GS
= -3.5V
-5.0V
-6.0V
-7.0V
-8.0V
-10V
-4.5V
-4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANC
E
I
D
= -3.5A
V
GS
= -10V
0
0.1
0.2
0.3
0.4
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, O
N
-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
= -1.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
3
6
9
12
15
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
,
R
EVER
SE
DRAIN CURRE
NT (
A
)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4559
FDS4559 Rev C1(W)
Typical Characteristics: Q2
0
2
4
6
8
10
0
4
8
12
16
Q
g
, GATE CHARGE (nC)
-V
GS
, G
A
TE
-
S
O
URCE
V
O
LTAG
E
(
V
)
I
D
= -3.0A
V
DS
= 10V
20V
30V
0
200
400
600
800
1000
1200
0
10
20
30
40
50
60
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACIT
ANCE
(
p
F
)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRAI
N CURRE
NT
(A)
DC
10s
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
0
10
20
30
40
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
)
,
P
E
AK TRANS
IE
NT P
O
WE
R (
W
)
SINGLE PULSE
R
JA
= 135C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS4559
FDS4559 Rev C1(W)
Typical Characteristics: Q1
0
4
8
12
16
20
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN-
S
O
URCE
CURRE
NT (
A
)
V
GS
= 10V
6.0V
5.0V
4.5V
4.0V
3.5V
0.8
1
1.2
1.4
1.6
1.8
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANCE
V
GS
= 4.0V
10V
5.0V
4.5V
6.0V
8.0V
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANC
E
I
D
= 4.5A
V
GS
= 10V
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, O
N
-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
= 2.3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
20
1
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
R
EVER
SE
DRAIN CURRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4559
FDS4559 Rev C1(W)
Typical Characteristics: Q1
0
2
4
6
8
10
0
2
4
6
8
10
12
14
Q
g
, GATE CHARGE (nC)
V
GS
, G
A
TE
-
S
O
URCE
V
O
LTAG
E
(
V
)
I
D
= 4.5A
V
DS
= 10V
20V
30V
0
100
200
300
400
500
600
700
800
900
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACITANCE
(
pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
DC
1s
100ms
10ms
1m
100
s
V
GS
= 10V
SINGLE PULSE
R
JA
= 135
o
C/W
T
A
= 25
o
C
R
DS(ON)
LIMIT
0
10
20
30
40
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
POW
E
R
(W
)
SINGLE PULSE
R
JA
= 135
o
C/W
T
A
= 25
o
C
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
JA
(t) = r(t) + R
JA
R
JA
= 135C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS4559
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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