January 2005
2005 Fairchild Semiconductor Corporation
FDS4885C Rev D(W)
FDS4885C
Dual N & P-Channel PowerTrench
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
Synchronous rectifier
Backlight inverter stage
Features
Q1:
N-Channel
7.5A, 40V
R
DS(on)
= 22m
@ V
GS
= 10V
R
DS(on)
= 35m
@ V
GS
= 7V
Q2:
P-Channel
6A, 40V
R
DS(on)
= 31m
@ V
GS
= 10V
R
DS(on)
= 42m
@ V
GS
= 4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
S
D
S
S
SO-8
D
D
D
G
D1
D1
D2
D2
S1
G1
S2
G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
V
DSS
Drain-Source Voltage
40
40
V
V
GSS
Gate-Source Voltage
20
20
V
I
D
Drain Current - Continuous
(Note 1a)
7.5
6
A
- Pulsed
20
20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4885C
FDS4885C
13"
12mm
2500 units
FDS4885C
FDS4885C Rev D(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V,
I
D
= 250
A
V
GS
= 0 V,
I
D
= 250
A
Q1
Q2
40
40
V
BV
DSS
T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
I
D
= 250 A, Referenced to 25
C
Q1
Q2
40
30
mV/
C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 32 V,
V
GS
= 0 V
V
DS
= 32 V,
V
GS
= 0 V
Q1
Q2
1
1
A
I
GSSF
Gate-Body Leakage, Forward V
GS
= 20 V,
V
DS
= 0 V
All
100
nA
I
GSSR
Gate-Body Leakage, Reverse V
GS
= 20 V,
V
DS
= 0 V
All
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
A
V
DS
= V
GS
,
I
D
= 250 A
Q1
Q2
2
1
4
1.6
5
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
I
D
= 250 A, Referenced to 25
C
Q1
Q2
9
5
mV/
C
V
GS
= 10 V,
I
D
= 7.5 A
V
GS
= 7 V,
I
D
= 6.5 A
V
GS
= 10 V, I
D
= 7.5 A, T
J
= 125
C
Q1
17
27
26
22
35
36
m
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 6 A
V
GS
= 4.5 V,
I
D
= 5.3 A
V
GS
= 10 V, I
D
= 6 A, T
J
= 125
C
Q2
26
34
37
31
42
47
g
FS
Forward Transconductance
V
DS
= 10 V,
I
D
= 7.5 A
V
DS
= 10 V,
I
D
=6 A
Q1
Q2
14
19
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
900
1560
pF
C
oss
Output Capacitance
Q1
Q2
200
215
pF
C
rss
Reverse Transfer Capacitance
Q1
V
DS
= 20 V, V
GS
= 0 V, f = 1.0 MHz
Q2
V
DS
= 20 V, V
GS
= 0 V, f = 1.0 MHz
Q1
Q2
100
110
pF
R
G
Gate Resistance
V
GS
= 15 mV,
f = 1.0 MHz
Q1
Q2
2
9
FDS4885C
FDS4885C Rev D(W)
Electrical Characteristics
(continued)
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ Max Units
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
Q1
Q2
26
11
42
20
ns
t
r
Turn-On Rise Time
Q1
Q2
36
14
58
25
ns
t
d(off)
Turn-Off Delay Time
Q1
Q2
45
71
72
114
ns
t
f
Turn-Off Fall Time
Q1
V
DD
= 20 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q2
V
DD
= 20 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q1
Q2
33
30
53
48
ns
Q
g
Total Gate Charge
Q1
Q2
15
29
21
41
nC
Q
gs
Gate-Source Charge
Q1
Q2
5
4
nC
Q
gd
Gate-Drain Charge
Q1
V
DS
= 20 V, I
D
= 7.5 A, V
GS
= 10 V
Q2
V
DS
= 20 V, I
D
= 6 A,V
GS
= 10 V
Q1
Q2
4.6
5
nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
1.3
1.3
A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
Q1
Q2
0.7
0.7
1.2
1.2
V
t
rr
Diode Reverse Recovery
Time
Q1
Q2
26
26
nS
Q
rr
Diode Reverse Recovery
Charge
Q1
I
F
= 7.5 A, d
iF
/d
t
= 100 A/s
Q2
I
F
= 6 A, d
iF
/d
t
= 100 A/s
Q1
Q2
18
13
nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 78/W when
mounted on a
0.5 in
2
pad of 2 oz
copper
b) 125/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDS4885C
FDS4885C Rev D(W)
Typical Characteristics: Q1 (N-Channel)
0
4
8
12
16
20
0
0.25
0.5
0.75
1
1.25
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
6.5V
7.0V
8.0V
5.5V
6.0V
0.6
1
1.4
1.8
2.2
2.6
3
3.4
3.8
4.2
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 6.0V
8.0V
6.5V
10V
7.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 7.5A
V
GS
= 10V
0.015
0.025
0.035
0.045
0.055
0.065
0.075
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 3.8A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
35
40
45
50
3
4
5
6
7
8
9
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4885C
FDS4885C Rev D(W)
Typical Characteristics: Q1 (N-Channel)
0
2
4
6
8
10
12
14
0
4
8
12
16
20
24
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 7.5A
V
DS
= 10V
30V
20V
0
200
400
600
800
1000
1200
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= 10.0V
SINGLE PULSE
R
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 135C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS4885C
FDS4885C Rev D(W)
Typical Characteristics: Q2 (P-Channel)
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
V
GS
= -10V
-6.0V
-4.0V
-4.5V
-3.0V
-3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
5
10
15
20
25
30
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= - 3.0V
-3.5V
-6.0V
-4.5V
-4.0V
-10V
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -6A
V
GS
= - 10V
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
1
1.5
2
2.5
3
3.5
4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4885C
FDS4885C Rev D(W)
Typical Characteristics: Q2 (P-Channel)
0
2
4
6
8
10
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -6A
V
DS
= -10V
-20V
-30V
0
400
800
1200
1600
2000
0
5
10
15
20
25
30
35
40
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC
10s
1s
100ms
100
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 135C/W
T
A
= 25C
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 135
o
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4885C
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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