July 2005
2005 Fairchild Semiconductor Corporation
FDS6299S Rev C (W)
FDS6299S
30V N-Channel PowerTrench
SyncFET
TM
General Description
The FDS6299S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS6299S includes
a patented combination of a MOSFET monolithically
integrated with a Schottky diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore low side switch
Point of load low side switch
Features
21 A, 30 V.
R
DS(ON)
= 3.9 m
@ V
GS
= 10 V
R
DS(ON)
= 5.1 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
100%
R
G
(Gate Resistance) tested
Termination is Lead-free and RoHS Compliant
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source
Voltage
20
V
Drain Current Continuous
(Note 1a)
21
I
D
Pulsed
105
A
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6299S
FDS6299S
13''
12mm
2500 units
FDS6299S
FDS6299S Rev C (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V,
I
D
= 1 mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 1 mA, Referenced to 25
C
32 mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V,
V
GS
= 0 V
500
A
I
GSS
GateBody
Leakage
V
GS
= 20 V, V
DS
= 0 V
100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
1
1.7
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 1 mA, Referenced to 25
C
4 mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 21 A
V
GS
= 4.5 V, I
D
= 19 A
V
GS
=10 V, I
D
=21 A, T
J
=125
C
3.3
4.1
4.5
3.9
5.1
5.6
m
g
FS
Forward
Transconductance
V
DS
= 10 V,
I
D
= 21 A
94
S
Dynamic Characteristics
C
iss
Input
Capacitance
3880
pF
C
oss
Output
Capacitance
1030
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
310 pF
R
G
Gate
Resistance
V
GS
= 15 mV, f = 1.0 MHz
0.4
1.8
3.1
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
12
22
ns
t
r
TurnOn Rise Time
12
22
ns
t
d(off)
TurnOff Delay Time
60
96
ns
t
f
TurnOff
Fall
Time
V
DD
= 15 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
35
56 ns
Q
g(TOT)
Total Gate Charge at V
GS
=10V
58
81
nC
Q
g
Total Gate Charge at V
GS
=5V
31
43
nC
Q
gs
GateSource
Charge
11
nC
Q
gd
GateDrain
Charge
V
DS
= 15 V,
I
D
= 21 A
8 nC
DrainSource Diode Characteristics and Maximum Ratings
V
SD
DrainSource Diode Forward Voltage V
GS
= 0 V, I
S
= 3.5 A
(Note 2)
420
700 mV
t
rr
Diode Reverse Recovery Time
32
ns
I
RM
Diode Reverse Recovery Current
2.1
A
Q
rr
Diode Reverse Recovery Charge
I
F
= 21 A,
dI
F
/dt = 300 A/s
(Note
3)
34 nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 50/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%.
3. See "SyncFET Schottky body diode characteristics" below.
FDS6299S
FDS6299S Rev C (W)
Typical Characteristics
0
15
30
45
60
75
90
105
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
D
R
A
I
N
CUR
RE
NT (
A
)
2.5V
3.5V
V
GS
= 10V
4.0V
3.0V
4.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
15
30
45
60
75
90
105
I
D
, DRAIN CURRENT (A)
R
DS
(O
N)
,
NO
R
M
ALI
Z
ED
D
RAI
N-
S
O
UR
CE
O
N
-
R
E
S
I
S
T
AN
CE
V
GS
= 3.0V
4.5V
4.0V
3.5V
10V
5.0V
6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
,
NO
RM
AL
IZ
ED
DRA
IN-S
OU
RCE O
N
-RE
S
IS
TA
NCE
I
D
= 21A
V
GS
=10V
0.002
0.004
0.006
0.008
0.01
0.012
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, ON
-R
ES
IS
TA
NC
E
(OH
M
)
I
D
= 10.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
15
30
45
60
75
90
105
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
D
RAI
N C
U
R
R
E
N
T
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
RE
VE
R
S
E
DR
AI
N C
U
R
R
E
N
T
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6299S
FDS6299S Rev C (W)
Typical Characteristics
(continued)
0
2
4
6
8
10
0
10
20
30
40
50
60
Q
g
, GATE CHARGE (nC)
V
GS
, GA
T
E
-S
OU
RC
E V
O
LTAG
E
(
V
)
I
D
= 21A
V
DS
= 10V
20V
15V
0
800
1600
2400
3200
4000
4800
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CA
PA
CI
TA
NC
E (pF
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
D
R
A
I
N CU
RR
E
N
T (
A
)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
10s
100us
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(
pk
)
,
P
E
AK T
R
ANS
IE
NT PO
WER (
W
)
SINGLE PULSE
R
JA
= 125C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t
)
,
NORM
AL
I
Z
ED
E
F
F
E
C
T
I
V
E T
R
AN
SI
ENT
T
H
ER
M
A
L
RES
I
ST
AN
CE
R
JC
(t) = r(t) * R
JC
R
JC
= 125 C/W
T
J
- T
C
= P * R
JC
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6299S
FDS6299S Rev C (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild's SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6299S.
Figure 12. FDS6299S SyncFET body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
DS
S
, R
E
V
E
RS
E LE
AK
AG
E C
U
R
R
E
N
T
(A
)
T
A
= 125
o
C
T
A
= 25
o
C
T
A
= 100
o
C
Figure 13. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
CURRE
NT : 0
.
8
A
/div
TIME : 12.5ns/div
FDS6299S
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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