2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
April 2005
FDS6676AS Rev. A (X)
FDS6676AS 30V N-Channel P
o
werT
renc
h
SyncFETTM
FDS6676AS
30V N-Channel PowerTrench
SyncFETTM
Features
14.5 A, 30 V. R
DS(ON)
max= 6.0 m
@ V
GS
= 10 V
R
DS(ON)
max= 7.25 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (45nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
Applications
DC/DC converter
Low side notebook
General Description
The FDS6676AS is designed to replace a single SO-8 MOSFET
and Schottky diode in synchronous DC:DC power supplies.
This 30V MOSFET is designed to maximize power conversion
efficiency, providing a low R
DS(ON)
and low gate charge. The
FDS6676AS includes an integrated Schottky diode using Fair-
child's monolithic SyncFET technology.
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current
Continuous
(Note 1a)
14.5
A
Pulsed
50
P
D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6676AS
FDS6676AS
13''
12mm 2500
units
FDS6676AS
FDS6676AS_NL
(Note 3)
13''
12mm 2500
units
S
D
S
S
SO-8
D
D
D
G
5
6
7
8
4
3
2
1
2
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FDS6676AS Rev. A (X)
FDS6676AS 30V N-Channel P
o
werT
renc
h
SyncFETTM
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 1 mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 1 mA, Referenced to 25
C
28
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
A
I
GSS
GateBody Leakage
V
GS
=
20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
1
1.5
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 1 mA, Referenced to 25
C
3.3
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V, I
D
= 14.5 A
V
GS
= 4.5 V, I
D
= 13.2 A
V
GS
= 10 V, I
D
= 14.5A, T
J
= 125
C
4.9
5.9
6.7
6.0
7.25
8.5
m
I
D(on)
OnState Drain Current
V
GS
= 10 V, V
DS
= 5 V
50
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 14.5 A
66
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
2510
pF
C
oss
Output Capacitance
710
pF
C
rss
Reverse Transfer Capacitance
270
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.6
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
10
20
ns
t
r
TurnOn Rise Time
12
22
ns
t
d(off)
TurnOff Delay Time
43
69
ns
t
f
TurnOff Fall Time
29
46
ns
t
d(on)
TurnOn Delay Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
17
31
ns
t
r
TurnOn Rise Time
22
35
ns
t
d(off)
TurnOff Delay Time
34
54
ns
t
f
TurnOff Fall Time
29
46
ns
Q
g(TOT)
Total Gate Charge at Vgs=10V
V
DD
= 15 V, I
D
= 14.5 A,
45
63
nC
Q
g
Total Gate Charge at Vgs=5V
25
35
nC
Q
gs
GateSource Charge
7
nC
Q
gd
GateDrain Charge
8
nC
3
www.fairchildsemi.com
FDS6676AS Rev. A (X)
FDS6676AS 30V N-Channel P
o
werT
renc
h
SyncFETTM
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
3.
FDS6676AS_NL is a lead free product. The FDS6676AS_NL marking will appear on the reel label.
DrainSource Diode Characteristics and Maximum Ratings
V
SD
DrainSource Diode Forward Voltage
V
GS
= 0 V, I
S
= 3.5 A
(Note 2)
V
GS
= 0 V, I
S
= 7 A
(Note 2)
0.4
0.5
0.7
V
t
rr
Diode Reverse Recovery Time
I
F
= 14.5A,
d
iF
/d
t
= 300 A/s
(Note 3)
27
nS
I
RM
Diode Reverse Recovery Current
1.9
A
Q
rr
Diode Reverse Recovery Charge
26
nC
a) 50/W when mounted
on a 1 in
2
pad of 2 oz
copper
b) 105/W when mounted
on a .04 in
2
pad of 2 oz
copper
c) 125/W when mounted
on a minimum pad.
See "SyncFET
Schottky body diode
characteristics" below
Electrical Characteristics
T
A
= 25C unless otherwise noted (Continued)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
4
www.fairchildsemi.com
FDS6676AS Rev. A (X)
FDS6676AS 30V N-Channel P
o
werT
renc
h
SyncFETTM
Typical Characteristics
0
10
20
30
40
50
0
0.25
0.5
0.75
1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
2.5V
3.5V
V
GS
= 10V
4.5V
3.0V
6.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
4.5V
3.5V
4.0V
10V
6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-55
-35
-15
5
25
45
65
85
105
125
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 14.5A
V
GS
=10V
0.004
0.006
0.008
0.01
0.012
0.014
0.016
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 7.3 A
T
A
= 125
C
T
A
= 25
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
C
25
C
-55
C
V
DS
= 5V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
C
25
C
-55
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
5
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FDS6676AS Rev. A (X)
FDS6676AS 30V N-Channel P
o
werT
renc
h
SyncFETTM
Typical Characteristics
FDS6676AS Rev A (X)
0
2
4
6
8
10
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 14.5A
V
DS
= 10V
20V
15V
0
500
1000
1500
2000
2500
3000
3500
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
C/W
T
A
= 25
C
10ms
10s
100
s
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 125
C/W
T
A
= 25
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
JC
(t) = r(t) * R
JC
R
JC
= 125
C/W
T
J
- T
C
= P * R
JC
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
2
t
1
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
6
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FDS6676AS Rev. A (X)
FDS6676AS 30V N-Channel P
o
werT
renc
h
SyncFETTM
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in paral-
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6676AS.
Figure 12. FDS6676AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recov-
ery characteristics of the body diode of an equivalent size MOS-
FET produced without SyncFET (FDS6676).
Figure 13. Non-SyncFET (FDS6676) body diode
reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
0.8A/DIV
10nS/DIV
0.8A/DIV
10nS/DIV
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
DSS
, REVERSE LEAKAGE CURRENT (A)
T = 125
T
A
= 25
T
A
= 100
A
C
C
C
7
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FDS6676AS Rev. A (X)
FDS6676AS 30V N-Channel P
o
werT
renc
h
SyncFETTM
Typical Characteristics
V
DS
L
Figure 15. Unclamped Inductive
Load Test Circuit
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveform
Figure 19. Switching Time
Test Circuit
Figure 19. Switching Time Waveforms
Figure 16. Unclamped Inductive
Waveforms
R
GE
DUT
V
GS
I
AS
0.01
V
DD
+
tp
0V
vary t
P
to obtain
required peak I
AS
V
GS
t
AV
t
P
I
AS
V
DS
V
DD
BV
DSS
V
DS
R
L
R
GEN
DUT
V
DD
V
GS
Pulse Width
1s
Duty Cycle
0.1%
V
GS
+
t
r
t
f
t
d(ON)
t
d(OFF)
t
ON
t
OFF
Pulse Width
10%
10%
90%
10%
90%
50%
90%
50%
0V
0V
V
GS
V
DS
V
GS
Q
GS
Q
GD
Q
G(TOT)
10V
Charge, (nC)
DUT
V
DD
V
GS
I
g(REF)
+
+
-
Same type as
Drain Current
1 F
10 F
10V
50k
8
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FDS6676AS Rev. A (X)
FDS6676AS 30V N-Channel P
o
werT
renc
h
SyncFETTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
Not In Production
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