January 2004
2004 Fairchild Semiconductor Corporation
FDS6676S Rev F1 (W)
FDS6676S
30V N-Channel PowerTrench
SyncFET
TM
General Description
The FDS6676S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS6676S includes
an integrated Schottky diode using Fairchild's
monolithic SyncFET technology.
Applications
DC/DC converter
Motor drives
Features
14.5 A, 30 V.
R
DS(ON)
7.5 m
@ V
GS
= 10 V
R
DS(ON)
9.0 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (43nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
16
V
I
D
Drain Current Continuous
(Note 1a)
14.5
A
Pulsed
50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6676S
FDS6676S
13''
12mm
2500 units
FDS
6676S
FDS6676S Rev F1 (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V,
I
D
= 1 mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 1 mA, Referenced to 25
C
21
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V,
V
GS
= 0 V
500
A
I
GSSF
GateBody Leakage, Forward
V
GS
= 16 V,
V
DS
= 0 V
100
nA
I
GSSR
GateBody Leakage, Reverse
V
GS
= 16 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 1 mA
1
1.4
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 1 mA, Referenced to 25
C
3.8
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 14.5 A
V
GS
= 4.5 V, I
D
= 13.2 A
V
GS
=10 V, I
D
=14.5A, T
J
=125
C
5.25
6.0
8.0
7.5
9.0
12
m
I
D(on)
OnState Drain Current
V
GS
= 10 V,
V
DS
= 5 V
50
A
g
FS
Forward Transconductance
V
DS
= 10 V,
I
D
= 14.5 A
80
S
Dynamic Characteristics
C
iss
Input Capacitance
4665
pF
C
oss
Output Capacitance
826
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
304
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.4
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
11
20
ns
t
r
TurnOn Rise Time
10
20
ns
t
d(off)
TurnOff Delay Time
82
131
ns
t
f
TurnOff Fall Time
V
DD
= 15 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
30
48
ns
Q
g
Total Gate Charge
43
60
nC
Q
gs
GateSource Charge
10
nC
Q
gd
GateDrain Charge
V
DS
= 15 V,
I
D
= 14.5 A,
V
GS
= 5 V
11
nC
DrainSource Diode Characteristics and Maximum Ratings
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 3.5 A
(Note 2)
V
GS
= 0 V, I
S
= 7 A
(Note 2)
390
490
700
mV
t
rr
Diode Reverse Recovery Time
31
nS
I
RM
Diode Reverse Recovery Current
1.8
A
Q
rr
Diode Reverse Recovery Charge
I
F
= 14.5A,
d
iF
/d
t
= 300 A/s
(Note 3)
30
nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 50/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125/W when mounted on a
minimum pad.
See "SyncFET Schottky body diode
characteristics" below
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDS
6676S
FDS6676S Rev F1 (W)
Typical Characteristics
0
10
20
30
40
50
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
2.5V
3.5V
V
GS
= 10V
4.5V
3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.5V
4.5V
3.0V
3.5V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-55
-35
-15
5
25
45
65
85
105
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 14.5A
V
GS
=10V
120
0.004
0.006
0.008
0.01
0.012
0.014
0.016
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 7.3 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS
6676S
FDS6676S Rev F1 (W)
Typical Characteristics
(continued)
0
2
4
6
8
10
0
20
40
60
80
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 14.5A
V
DS
= 10V
20V
15V
0
800
1600
2400
3200
4000
4800
5600
6400
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
10s
100us
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 125C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
JC
(t) = r(t) * R
JC
R
JC
= 125 C/W
T
J
- T
C
= P * R
JC
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS
6676S
FDS6676S Rev F1 (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild's SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6676S.
Figure 12. FDS6676S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6676).
Figure 13. Non-SyncFET (FDS6676) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
DSS
, REVERSE LEAKAGE CURRENT (A)
T
A
= 125
o
C
T
A
= 25
o
C
T
A
= 100
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
FDS
6676S
TIME : 12.5ns/div
typ t
RR
: 31ns
typ I
RM
: 2.4A
CURRENT : 0.8A/div
TIME : 12.5ns/div
typ t
RR
: 31ns
typ I
RM
: 1.8A
CURRENT : 0.8A/di
v
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
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