December 2004
2004 Fairchild Semiconductor Corporation
FDS6690AS Rev A(X)
FDS6690AS
30V N-Channel PowerTrench
SyncFET
TM
General Description
The FDS6690AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS6690AS
includes an integrated Schottky diode using Fairchild's
monolithic SyncFET technology. The performance of
the FDS6690AS as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS6690A in parallel with a Schottky diode.
Applications
DC/DC converter
Low side notebooks
Features
10 A, 30 V. R
DS(ON)
max= 12 m
@ V
GS
= 10 V
R
DS(ON)
max= 15 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky diode
Low gate charge (16nC typical)
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source
Voltage
20
V
I
D
Drain Current Continuous
(Note 1a)
10
A
Pulsed
50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6690AS
FDS6690AS
13''
12mm
2500 units
FDS6690AS FDS6690AS_NL
(Note 4)
13''
12mm
2500 units
FDS6690AS
FDS6690AS Rev A (X)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 1 mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 1 mA, Referenced to 25
C
28
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V,
V
GS
= 0 V
500
A
I
GSS
GateBody
Leakage
V
GS
=
20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
1
1.6
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 1 mA, Referenced to 25
C
3
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 10 A
V
GS
= 4.5 V,
I
D
= 8.5 A
V
GS
=10 V, I
D
=10A, T
J
=125
C
10
12
15
12
15
19
m
I
D(on)
OnState Drain Current
V
GS
= 10 V,
V
DS
= 5 V
50
A
g
FS
Forward
Transconductance V
DS
= 15 V,
I
D
= 10 A
45
S
Dynamic Characteristics
C
iss
Input
Capacitance
910
pF
C
oss
Output
Capacitance
270
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
100 pF
R
G
Gate
Resistance
V
GS
= 15 mV, f = 1.0 MHz
2.0
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
8 16 ns
t
r
TurnOn Rise Time
5
10
ns
t
d(off)
TurnOff Delay Time
25
40
ns
t
f
TurnOff
Fall
Time
V
DS
= 15 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
6 12 ns
t
d(on)
TurnOn
Delay
Time
11
20 ns
t
r
TurnOn Rise Time
11
20
ns
t
d(off)
TurnOff Delay Time
15
27
ns
t
f
TurnOff
Fall
Time
V
DS
= 15 V,
I
D
= 1 A,
V
GS
= 4.5 V,
R
GEN
= 6
8 16 ns
Q
g
(TOT)
Total Gate Charge at Vgs=10V
16
23
nC
Q
g
Total Gate Charge at Vgs=5V
9
13
nC
Q
gs
GateSource
Charge
2.3
nC
Q
gd
GateDrain
Charge
V
DD
= 15 V, I
D
= 10 A
3.0 nC
FDS6690
A
S
FDS6690AS Rev A (X)
Electrical Characteristics
TA = 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
3.5
A
V
SD
DrainSource
Diode
Forward
Voltage
V
GS
= 0 V, I
S
= 3.5 A
(Note 2)
0.6
0.7 V
T
rr
Diode Reverse Recovery Time
I
F
= 10A,
16
nS
Q
rr
Diode Reverse Recovery Charge
d
iF
/d
t
= 300 A/s
(Note
3)
9
nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 50/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
3. See "SyncFET Schottky body diode characteristics" below.
4. FDS6690AS_NL is a lead free product. The FDS6690AS_NL marking will appear on the reel label.
FDS6690
A
S
FDS6690AS Rev A (X)
Typical Characteristics
0
10
20
30
40
50
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DR
AI
N
CU
RRE
N
T
(A
)
4.0V
4.5V
3.0V
2.5V
V
GS
= 10V
6.0V
0.6
1
1.4
1.8
2.2
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
DS
(O
N
)
,
NO
RMA
L
I
Z
ED
DR
AI
N
-
S
O
UR
CE
O
N
-
R
E
S
I
S
T
AN
CE
V
GS
= 4.0V
6.0V
4.0V
10V
5.0V
4.5V
3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.7
0.85
1
1.15
1.3
1.45
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
,
NO
RM
AL
IZ
ED
DRA
IN-
S
O
URCE
O
N
-R
ESI
ST
ANCE
I
D
= 10A
V
GS
= 10V
0
0.01
0.02
0.03
0.04
0.05
0.06
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, ON
-R
ES
IS
TA
NC
E
(OH
M
)
I
D
= 5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DRA
IN
CURRE
NT
(A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVE
RSE
DRAI
N CURRE
NT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6690
A
S
FDS6690AS Rev A (X)
Typical Characteristics
0
2
4
6
8
10
0
3
6
9
12
15
18
21
Q
g
, GATE CHARGE (nC)
V
GS
, G
A
TE-SOUR
C
E
VO
LTA
GE
(
V
)
I
D
=10A
V
DS
= 10V
15V
20V
0
200
400
600
800
1000
1200
1400
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CA
P
A
C
I
T
ANC
E
(
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DR
AI
N
CU
RRE
N
T
(A
)
DC
10s
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(
pk), PEA
K TR
A
N
SIEN
T POWER
(W)
SINGLE PULSE
R
JA
= 125C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), N
O
RM
A
L
IZ
E
D
E
F
F
E
C
T
IV
E
TR
AN
SIE
N
T T
H
E
R
M
A
L RE
SIST
AN
CE
R
JA
(t) = r(t) * R
JA
R
JA
= 125 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6690
A
S
FDS6690AS Rev A (X)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild's SyncFET process embeds a Schottky
diode in parallel with PowerTrench MOSFET.
This diode exhibits similar characteristics to a
discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery
characteristic of the FDS6690AS.
Figure 12. FDS6690AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the
reverse recovery characteristics of the body diode
of an equivalent size MOSFET produced without
SyncFET (FDS6690A).
Figure 13. Non-SyncFET (FDS6690A)
body diode reverse recovery
characteristic.
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage.
This will increase the power in the device.
0.000001
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
DS
S
,
REVE
RSE
LE
AKAGE
C
URRENT
(A
)
T
A
= 125
o
C
T
A
= 25
o
C
T
A
= 100
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
3A/DIV
FDS6690
A
S
10nS/DIV
3A/DIV
0V
FDS6690AS Rev A (X)
Typical Characteristics
V
DS
L
Figure 15. Unclamped Inductive Load Test
Circuit
Figure 16. Unclamped Inductive
Waveforms
Figure 20. Switching Time Waveforms
R
GE
DUT
V
GS
I
AS
0.01
V
DD
+
-
tp
0V
vary t
P
to obtain
required peak I
AS
V
GS
t
AV
t
P
I
AS
V
DS
V
DD
BV
DSS
Figure 19. Switching Time Test
Circuit
V
DS
R
L
R
GEN
DUT
V
DD
V
GS
Pulse Width
1
s
Duty Cycle
0.1
%
V
GS
+
-
t
r
t
f
t
d(ON)
t
d(OFF
)
t
ON
t
OFF
Pulse Width
10%
10%
90%
10%
90%
50%
90%
50%
0V
0V
V
GS
V
DS
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveform
V
GS
Q
GS
Q
GD
Q
G(TOT)
10V
Charge, (nC)
DUT
V
DD
V
GS
I
g(REF
+
-
+
-
Same type as
Drain Current
1
F
10
F
10V
50k
FDS6690AS
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
IntelliMAXTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
Rev. I15
ACExTM
ActiveArrayTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
PDF 
ZIP