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Электронный компонент: FDS6900AS_NL

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May 2005

2005 Fairchild Semiconductor Corporation FDS6900AS Rev
B(X)
FDS6900AS
Dual N-Ch PowerTrench
SyncFET
TM
General Description
The FDS6900AS is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6900AS contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild's monolithic SyncFET technology.
Features
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.2A, 30V R
DS(on)
= 22m
@ V
GS
= 10V
R
DS(on)
= 28m
@ V
GS
= 4.5V
Q1:
Optimized for low switching losses
Low Gate Charge (11nC typical)
6.9A, 30V
R
DS(on)
= 27m
@ V
GS
= 10V
R
DS(on)
= 34m
@ V
GS
= 4.5V
100%
R
G
(Gate Resistance) Tested
8
1
7
2
6
3
5
4
Dual N-Channel SyncFet
Q1
Q2
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol Parameter
Q2
Q1 Units
V
DSS
Drain-Source
Voltage
30
30
V
V
GSS
Gate-Source
Voltage
20
20
V
I
D
Drain Current - Continuous
(Note 1a)
8.2
6.9 A
-
Pulsed
30
20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6900AS FDS6900AS 13"
12mm
2500
units
FDS6900AS FDS6900AS_NL
(Note 4)
13"
12mm
2500
units
S
D
S
S
SO-
D
D
D
G
G1
S1D2
S1D2
S1D2
D1
D1
G2
S2
Pin 1
SO-8
FDS6900AS
FDS6900AS Rev
B (X)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter Test
Conditions
Type Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V,
I
D
= 1 mA
V
GS
= 0 V,
I
D
= 250 uA
Q2
Q1
30
30
V
BV
DSS
T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 10 mA, Referenced to 25
C
I
D
= 250 A, Referenced to 25
C
Q2
Q1

27
22

mV/
C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 24 V,
V
GS
= 0 V
Q2
Q1
500
1
A
I
GSS
Gate-Body
Leakage
V
GS
=
20 V, V
DS
= 0 V
Q2
Q1
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 A
Q2
Q1
1
1
1.9
1.9
3
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, Referenced to 25
C
I
D
= 250 uA, Referenced to 25
C
Q2
Q1
3.2
4.2
mV/
C
V
GS
= 10 V,
I
D
= 8.2 A
V
GS
= 10 V, I
D
= 8.2 A, T
J
= 125
C
V
GS
= 4.5 V,
I
D
= 7.6 A
Q2
17
23
21
22
36
28
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 6.9 A
V
GS
= 10 V, I
D
= 6.9 A, T
J
= 125
C
V
GS
= 4.5 V,
I
D
= 6.2 A
Q1 22
30
27
27
38
34
m
I
D(on)
On-State
Drain
Current V
GS
= 10 V,
V
DS
= 5 V
Q2
Q1
30
20
A
g
FS
Forward
Transconductance
V
DS
= 5 V,
I
D
= 8.2 A
V
DS
= 5 V,
I
D
= 6.9 A
Q2
Q1
25
21
S
Dynamic Characteristics
C
iss
Input
Capacitance
Q2
Q1
570
600
pF
C
oss
Output
Capacitance
Q2
Q1
180
150
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz

Q2
Q1
70
70
pF
R
G
Gate
Resistance
Q2
Q1
2.8
2.2
4.9
3.8
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
Q2
Q1
10
9
19
18
ns
t
r
Turn-On
Rise
Time
Q2
Q1
5
4
10
8
ns
t
d(off)
Turn-Off Delay Time
Q2
Q1
26
23
42
32
ns
t
f
Turn-Off
Fall
Time
V
DD
= 15 V,
I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q2
Q1
3
3
6
6
ns
t
d(on)
Turn-On Delay Time
Q2
Q1
11
10
20
19
ns
t
r
Turn-On
Rise
Time
Q2
Q1
15
9
27
18
ns
t
d(off)
Turn-Off Delay Time
Q2
Q1
16
14
29
25
ns
t
f
Turn-Off
Fall
Time
V
DD
= 15 V,
I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Q2
Q1
6
4
12
8
ns
FDS6900
A
S
FDS6900AS Rev
B (X)
Electrical Characteristics
(continued)
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Switching Characteristics
(Note 2)
Q
g
(TOT)
Total Gate Charge at Vgs=10V
Q2
Q1
10
11
15
15
nC
Q
g
Total Gate Charge at Vgs=5V
Q2
Q1
5.8
6.1
8.2
8.5
nC
Q
gs
GateSource Charge
Q2
Q1
1.6
1.7
nC
Q
gd
GateDrain Charge
Q2:
V
DS
= 15 V, I
D
= 8.2A
Q1:
V
DS
= 15 V, I
D
= 6.9A
Q2
Q1
2.1
2.2
nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
2.3
1.3
A
T
rr
Reverse
Recovery
Time
15
ns
Q
rr
Reverse Recovery Charge
I
F
= 8.2 A,
d
iF
/d
t
= 300 A/s
(Note
3)
Q2
6 nC
T
rr
Reverse
Recovery
Time
19
ns
Q
rr
Reverse Recovery Charge
I
F
= 6.9 A,
d
iF
/d
t
= 100 A/s
(Note
3)
Q1
10 nC
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
V
GS
= 0 V, I
S
= 5 A
(Note 2)
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
Q2
Q2
Q1
0.6
0.7
0.7
0.7
1.0
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 78C/W
when
mounted on a
0.5in
2
pad of 2
oz copper
b) 125C/W
when
mounted on a
0.02 in
2
pad of
2 oz copper
c) 135C/W
when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
3. See "SyncFET Schottky body diode characteristics" below.
4. FDS6900AS_NL is a lead free product. The FDS6900AS_NL marking will appear on the reel label.
FDS6900
A
S
FDS6900AS Rev
B (X)
Typical Characteristics: Q2
0
10
20
30
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRA
I
N
CUR
RE
NT

(
A
)
4.5V
3.0V
V
GS
= 10V
4.0V
6.0V
2.5V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N
)
,
NO
R
M
ALI
Z
ED
DR
AI
N-
SO
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
V
GS
= 3.0V
6.0V
10V
4.5V
4.0V
5.0V
3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RM
A
L
I
Z
ED
DRAI
N-SO
UR
CE ON
-RES
IST
A
N
C
E
I
D
= 8.2A
V
GS
= 10V
0.01
0.02
0.03
0.04
0.05
0.06
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N)
,
ON-
R
ESISTAN
CE (
O
HM)
I
D
= 4A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DR
AI
N CUR
R
ENT
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,

REV
E
R
S
E
D
RAI
N
C
URR
EN
T
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6900
A
S
FDS6900AS Rev
B (X)
Typical Characteristics: Q2
0
2
4
6
8
10
0
3
6
9
12
Q
g
, GATE CHARGE (nC)
V
GS
,
GATE
-SO
U
R
C
E VOLTA
G
E
(V)
I
D
=8.2A
V
DS
= 10V
20V
15V
0
200
400
600
800
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CA
PA
CI
TA
NCE
(p
F
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRA
I
N
CU
RRE
NT
(A
)
DC
10s
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(
pk
)
,
PEAK T
R
AN
SIE
N
T

P
O
WER (
W
)
SINGLE PULSE
R
JA
= 135C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NO
RMALIZE
D
EFFECT
IVE TRAN
SIENT
TH
ER
MA
L R
ESISTA
N
C
E
R
JA
(t) = r(t) * R
JA
R
JA
= 135 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6900
A
S
FDS6900AS Rev
B (X)
Typical Characteristics Q1
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRA
I
N
CUR
RE
NT

(
A
)
V
GS
= 10V
6.0V
3.0V
3.5V
4.5V
2.5V
4.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
R
DS
(O
N)
,
NO
R
M
ALI
Z
ED
DR
AI
N-
SO
U
RCE
O
N
-
R
E
S
I
S
T
A
N
C
E
V
GS
= 3.0V
4.5V
6.0V
4.0V
10V
3.5V
5.0V
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
,
NO
RM
AL
IZ
ED
D
RAIN
-
SO
UR
CE O
N
-
R
ES
IST
A
N
C
E
I
D
= 6.9A
V
GS
= 10V
0.02
0.03
0.04
0.05
0.06
0.07
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(O
N)
, ON-R
ESIS
T
AN
CE

(OH
M
)
I
D
= 3.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 14. On-Resistance Variation with
Temperature.
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
20
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DR
AI
N CU
RRE
NT
(A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
,
REV
E
R
S
E D
RAI
N C
URR
ENT
(
A
)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 16. Transfer Characteristics.
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6900
A
S
FDS6900AS Rev
B (X)
Typical Characteristics Q1
0
2
4
6
8
10
0
2
4
6
8
10
12
Q
g
, GATE CHARGE (nC)
V
GS
,
GA
TE-
S
O
U
R
C
E

VOLT
AG
E
(
V
)
I
D
= 6.9A
V
DS
= 10V
15V
20V
0
200
400
600
800
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CA
P
ACI
TA
NC
E (p
F
)
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Figure 18. Gate Charge Characteristics.
Figure 19. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, D
RAI
N

C
URR
EN
T (
A
)
DC
10s
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
)
,
P
E
A
K

TR
AN
SI
EN
T P
O
W
E
R
(W
)
SINGLE PULSE
R
JA
= 135C/W
T
A
= 25C
Figure 20. Maximum Safe Operating Area.
Figure 21. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t
)
,
N
O
R
M
A
L
I
Z
ED
EF
FEC
T
I
V
E TR
A
N
SI
EN
T
T
H
ER
MA
L R
ESI
STA
N
C
E
R
JA
(t) = r(t) * R
JA
R
JA
= 135
o
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 22. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6900
A
S
FDS6900AS Rev
B (X)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild's SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 23
shows the reverse recovery characteristic of the
FDS6900AS.
Figure 23. FDS6900AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 24 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690).
Figure 24. Non-SyncFET (FDS6690) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.000001
0.00001
0.0001
0.001
0.01
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
DS
S
,

REVE
RSE
LE
AKAGE
C
URRENT
(A
)
125
o
C
25
o
C
100
o
C
Figure 25. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature


























FDS6900
A
S
Current
:
1.6A/DIV
Time: 10nS/DIV
Time: 10nS/DIV
C
u
rrent
:
1.6A
/D
IV
FDS6900AS Rev
B (X)

Typical Characteristics


V
DS
L
Figure 26. Unclamped Inductive Load Test
Circuit
Figure 27. Unclamped Inductive
Waveforms
Figure 31. Switching Time Waveforms
R
GE
DUT
V
GS
I
AS
0.01
V
DD
+
-
tp
0V
vary t
P
to obtain
required peak I
AS
V
GS
t
AV
t
P
I
AS
V
DS
V
DD
BV
DSS
Figure 30. Switching Time Test
Circuit
V
DS
R
L
R
GEN
DUT
V
DD
V
GS
Pulse Width
1
s
Duty Cycle
0.1
%
V
GS
+
-
t
r
t
f
t
d(ON)
t
d(OFF
)
t
ON
t
OFF
Pulse Width
10%
10%
90%
10%
90%
50%
90%
50%
0V
0V
V
GS
V
DS
Figure 28. Gate Charge Test Circuit
Figure 29. Gate Charge Waveform
V
GS
Q
GS
Q
GD
Q
G(TOT)
10V
Charge, (nC)
DUT
V
DD
V
GS
I
g(REF
+
-
+
-
Same type as
Drain Current
1
F
10
F
10V
50k
FDS6900AS
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
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