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Электронный компонент: FDS6984S

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September 2002
2002 Fairchild Semiconductor Corporation
FDS6986S Rev C1(W)
FDS6986S
Dual Notebook Power Supply N-Channel PowerTrench
SyncFET
TM
General Description
The FDS6986S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6986S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild's monolithic SyncFET technology.
Features
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
7.9A, 30V
R
DS(on)
= 20 m
@ V
GS
= 10V
R
DS(on)
= 28 m
@ V
GS
= 4.5V
Q1:
Optimized for low switching losses
Low gate charge (6.5 nC typical)
6.5A, 30V
R
DS(on)
= 29 m
@ V
GS
= 10V
R
DS(on)
= 38 m
@ V
GS
= 4.5V
S
D
S
S
SO-8
D
D
D
G
S1
/D
2
Pin 1
SO-8
D
2/S
1
D
2/S1
D
1
D
1
G
1
S2
G
2
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol Parameter
Q2
Q1 Units
V
DSS
Drain-Source
Voltage
30
30
V
V
GSS
Gate-Source
Voltage
20
16
V
I
D
Drain Current - Continuous
(Note 1a)
7.9
6.5 A
-
Pulsed
30
20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6986S FDS6986S 13"
12mm
2500
units
FD
S6986S
background image
FDS6986S Rev C1 (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter Test
Conditions
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, I
D
= 250 uA
Q2
Q1
30
30
V
BV
DSS
T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 1 mA, Referenced to 25
C
I
D
= 250 A, Referenced to 25
C
Q2
Q1

20
23
mV/
C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 24 V, V
GS
= 0 V
Q2
Q1
500
1
A
I
GSSF
Gate-Body Leakage, Forward V
GS
= 20 V, V
DS
= 0 V
V
GS
= 16 V, V
DS
= 0 V
Q2
Q1
100
NA
I
GSSR
Gate-Body Leakage, Reverse V
GS
= 20 V, V
DS
= 0 V
V
GS
= 16 V, V
DS
= 0 V
Q2
Q1
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 A
Q2
Q1
1
1
2.4
1.6
3
3
V
I
D
= 1 mA, Referenced to 25
C
Q2 6
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 uA, Referenced to 25
C
Q1 4
mV/
C
V
GS
= 10 V, I
D
= 7.9 A
V
GS
= 10 V, I
D
= 7.9 A, T
J
= 125
C
V
GS
= 4.5 V, I
D
= 7 A
Q2
16
24
23
20
32
28
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 6.5 A
V
GS
= 10 V, I
D
= 6.5 A, T
J
= 125
C
V
GS
= 4.5 V, I
D
= 5.6 A
Q1 25
37
30
29
49
38
m
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
Q2
Q1
30
20
A
g
FS
Forward
Transconductance
V
DS
= 5 V, I
D
= 7.9 A
V
DS
= 5 V, I
D
= 6.5 A
Q2
Q1
23
22
S
Dynamic Characteristics
C
iss
Input
Capacitance
Q2
Q1
1233
695
pF
C
oss
Output
Capacitance
Q2
Q1
344
117
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz

Q2
Q1
106
58
pF
R
G
Gate
Resistance
V
GS
= 15mV, f = 1.0 MHz
Q2
Q1
1.4
1.7
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
Q2
Q1
8
7
16
14
ns
t
r
Turn-On
Rise
Time
Q2
Q1
5
4.5
10
9
ns
t
d(off)
Turn-Off
Delay
Time
Q2
Q1
25
20
40
36
ns
t
f
Turn-Off Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q2
Q1
11
2.5
20
5
ns
Q
g
Total Gate Charge
Q2
Q1
11
6.5
16
9
nC
Q
gs
Gate-Source
Charge
Q2
Q1
5
2.5
nC
Q
gd
Gate-Drain
Charge
Q2:
V
DS
= 15 V, I
D
= 7.9 A, V
GS
= 5 V

Q1:
V
DS
= 15 V, I
D
= 6.5 A, V
GS
= 5 V
Q2
Q1
4
1.3
nC
FD
S6986S
background image
FDS6986S Rev C1 (W)
Electrical Characteristics
(continued)
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
3.0
1.3
A
t
RR
Reverse Recovery Time
17
ns
Q
RR
Reverse Recovery Charge
I
F
= 10 A,
d
iF
/d
t
= 300 A/s
(Note
3)
Q2
12.5 nC
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 3.5 A
(Note
2)
V
GS
= 0 V, I
S
= 1.3 A
(Note
2)
Q2
Q1
0.5
0.74
0.7
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 78C/W
when
mounted on a
0.5in
2
pad of 2
oz copper
b) 125C/W
when
mounted on a
0.02 in
2
pad of
2 oz copper
c) 135C/W
when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
3. See "SyncFET Schottky body diode characteristics" below.
background image
FDS6986S Rev C1 (W)
Typical Characteristics: Q2
0
10
20
30
40
50
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
5.0V
4.5V
4.0V
3.5V
V
GS
= 10V
6.0V
0.6
1
1.4
1.8
2.2
2.6
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
6.0V
8.0V
10V
5.0V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.7
1
1.3
1.6
1.9
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 10A
V
GS
= 10V
0
0.01
0.02
0.03
0.04
0.05
0.06
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1.5
2.5
3.5
4.5
5.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FD
S6986S
background image
FDS6986S Rev C1 (W)
Typical Characteristics: Q2
0
2
4
6
8
10
0
3
6
9
12
15
18
21
Q
g
, GATE CHARGE (nC)
I
D
=10A
V
DS
= 5V
15V
10V
0
400
800
1200
1600
2000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
SINGLE PULSE
R
JA
= 135C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
FD
S6986S
background image
FDS6986S Rev C1 (W)
Typical Characteristics Q1
0
5
10
15
20
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
3.0V
4.5V
2.5V
3.5V
V
GS
= 10V
6.0V
0.75
1
1.25
1.5
1.75
2
2.25
0
5
10
15
20
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANCE
V
GS
= 3.0V
3.5V
4.5V
6.0V
10V
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANC
E
I
D
= 6.5A
V
GS
= 10V
0.015
0.025
0.035
0.045
0.055
0.065
0.075
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, O
N
-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
= 3.3 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
20
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
R
EVER
SE
DRAIN CURRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FD
S6986S
background image
FDS6986S Rev C1 (W)
Typical Characteristics Q1
0
2
4
6
8
10
0
3
6
9
12
Q
g
, GATE CHARGE (nC)
V
GS
, G
A
TE
-
S
O
URCE
V
O
LTAG
E
(
V
)
I
D
= 6.5A
V
DS
= 5V
15V
10V
0
200
400
600
800
1000
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACITANCE
(
pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
100s
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
P
(
pk
)
,
P
E
AK TRANS
IE
NT P
O
WE
R (
W
)
SINGLE PULSE
R
JA
= 135C/W
T
A
= 25C
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
JA
(t) = r(t) + R
JA
R
JA
= 135 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FD
S6986S
background image
FDS6986S Rev C1 (W)
Typical Characteristics
(continued) This section copied from FDS6984S datasheet
SyncFET Schottky Body Diode
Characteristics
Fairchild's SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 22 shows the
reverse recovery characteristic of the FDS6986S.
Figure 22. FDS6986S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).

Figure 23. Non-SyncFET (FDS6690A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
DS
S
,
R
EVER
SE L
E
AKAG
E
CURRE
NT
(
A
)
125
o
C
25
o
C
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
FD
S6986S
10nS/DIV
3A
/
D
I
V
10nS/DIV
3A
/
D
I
V
0V
background image
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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