2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
March 2005
FDS6990AS Rev. A
FDS6990AS Dual 30V N-Channel P
o
werT
renc
h
SyncFETTM
FDS6990AS
Dual 30V N
-
Channel PowerTrench
SyncFETTM
Features
7.5 A, 30 V. R
DS(ON)
= 22 m
@ V
GS
= 10 V
R
DS(ON)
= 28 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky diode
Low gate charge (10nC typical)
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability
Applications
DC/DC converter
Motor drives
General Description
The FDS6990AS is designed to replace a dual SO-8 MOSFET
and two Schottky diodes in synchronous DC:DC power sup-
plies. This 30V MOSFET is designed to maximize power con-
version efficiency, providing a low R
DS(ON)
and low gate charge.
Each MOSFET includes integrated Schottky diodes using Fair-
child's monolithic SyncFET technology. The performance of the
FDS6990AS as the low-side switch in a synchronous rectifier is
similar to the performance of the FDS6990A in parallel with a
Schottky diode.
Absolute Maximum Ratings
T
A
=25C unless otherwise noted
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current
Continuous
(Note 1a)
7.5
A
Pulsed
20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6990AS
FDS6990AS
13"
12mm 2500
units
FDS6990AS
FDS6990AS_NL (Note 4)
13"
12mm
2500 units
D2
D2
D1
D1
S2
G2
S1
G1
Pin 1
SO-8
4
5
3
6
2
7
1
8
Q1
Q2
2
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FDS6990AS Rev. A
FDS6990AS Dual 30V N-Channel P
o
werT
renc
h
SyncFETTM
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 1 mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 1 mA, Referenced to 25
C
31
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
A
I
GSS
GateBody Leakage
V
GS
=
20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
1
1.7
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 1 mA, Referenced to 25
C
3
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V, I
D
= 7.5 A
V
GS
= 10 V, I
D
= 7.5 A, T
J
= 125
C
V
GS
= 4.5 V, I
D
= 6.5 A
17
26
21
22
35
28
m
I
D(on)
OnState Drain Current
V
GS
= 10 V, V
DS
= 5 V
20
A
g
FS
Forward Transconductance
V
DS
= 15 V, I
D
= 10 A
29
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
550
pF
C
oss
Output Capacitance
330
pF
C
rss
Reverse Transfer Capacitance
60
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
3.1
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
8
16
ns
t
r
TurnOn Rise Time
5
10
ns
t
d(off)
TurnOff Delay Time
24
38
ns
t
f
TurnOff Fall Time
4
88
ns
t
d(on)
TurnOn Delay Time
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
9
18
ns
t
r
TurnOn Rise Time
8
16
ns
t
d(off)
TurnOff Delay Time
14
24
ns
t
f
TurnOff Fall Time
5
10
ns
Q
g(TOT)
Total Gate Charge at Vgs = 10V
V
DD
= 15 V, I
D
= 10 A, V
GS
= 5 V
10
14
nC
Q
g
Total Gate Charge at Vgs = 5V
6
8
nC
Q
gs
GateSource Charge
1.5
nC
Q
gd
GateDrain Charge
2.0
nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
2.9
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.3 A (Note 2)
0.6
0.7
V
t
rr
Diode Reverse Recovery Time
I
F
= 10A,
18
nS
Q
rr
Diode Reverse Recovery Charge
d
iF
/d
t
= 300 A/s (Note 3)
11
nC
3
www.fairchildsemi.com
FDS6990AS Rev. A
FDS6990AS Dual 30V N-Channel P
o
werT
renc
h
SyncFETTM
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
3. See "SyncFET Schottky body diode characteristics" below.
4. FDS6990AS_NL is a lead free product. The FDS6990AS_NL marking will appear on the reel label.
a) 78C/W when mounted
on a 0.5 in
2
pad of 2 oz
copper
b) 125C/W when
mounted on a 0.02 in
2
pad of 2 oz copper
c) 135C/W when
mounted on a
minimum pad.
4
www.fairchildsemi.com
FDS6990AS Rev. A
FDS6990AS Dual 30V N-Channel P
o
werT
renc
h
SyncFETTM
Typical Characteristics
0
5
10
15
20
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
3.0V
4.0V
2.5V
3.5V
V
GS
= 10V
4.5V
0.8
1
1.2
1.4
1.6
1.8
2
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
6.0V
4.0V
10V
5.0V
4.5V
3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 7.5A
V
GS
= 10V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 3.75A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
20
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
5
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FDS6990AS Rev. A
FDS6990AS Dual 30V N-Channel P
o
werT
renc
h
SyncFETTM
Typical Characteristics
0
2
4
6
8
10
0
2
4
6
8
10
12
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=7.5A
V
DS
= 10V
15V
20V
0
300
600
900
1200
1500
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s
100s
100s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 135
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 135
C/W
T
A
= 25
C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
R
JA
(t) = r(t) * R
JA
R
JA
= 135
C/W
T
J
T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
6
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FDS6990AS Rev. A
FDS6990AS Dual 30V N-Channel P
o
werT
renc
h
SyncFETTM
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in paral-
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6990AS.
Figure 12. FDS6990AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent size
MOSFET produced without SyncFET (FDS6990A).
Figure 13. Non-SyncFET (FDS6990A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
12.5nS/Div
0.4A/Div
0.4A/Div
12.5nS/Div
0.000001
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
I
DSS
, REVERSE LEAKAGE CURRENT (A)
T
A
= 125
C
T
A
= 25
C
T
A
= 100
C
7
www.fairchildsemi.com
FDS6990AS Rev. A
FDS6990AS Dual 30V N-Channel P
o
werT
renc
h
SyncFETTM
Typical Characteristics
(continued)
V
DS
L
Figure 15. Unclamped Inductive
Load Test Circuit
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveform
Figure 19. Switching Time
Test Circuit
Figure 20. Switching Time Waveforms
Figure 16. Unclamped Inductive
Waveforms
R
GE
DUT
V
GS
I
AS
0.01
V
DD
+
tp
0V
vary t
P
to obtain
required peak I
AS
V
GS
t
AV
t
P
I
AS
V
DS
V
DD
BV
DSS
V
DS
R
L
R
GEN
DUT
V
DD
V
GS
Pulse Width
1s
Duty Cycle
0.1%
V
GS
+
t
r
t
f
t
d(ON)
t
d(OFF)
t
ON
t
OFF
Pulse Width
10%
10%
90%
10%
90%
50%
90%
50%
0V
0V
V
GS
V
DS
V
GS
Q
GS
Q
GD
Q
G(TOT)
10V
Charge, (nC)
DUT
V
DD
V
GS
I
g(REF)
+
+
-
Same type as DUT
Drain Current
1 F
10 F
10V
50k
8
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FDS6990AS Rev. A
FDS6990AS Dual 30V N-Channel P
o
werT
renc
h
SyncFETTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
Not In Production
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