2004 Fairchild Semiconductor Corporation
FDS7066ASN3 Rev A (W)
August 2004
FDS7066ASN3
30V N-Channel PowerTrench
SyncFET
TM
General Description
The FDS7066ASN3 is designed to replace a single SO-
8 FLMP MOSFET and Schottky diode in synchronous
DC:DC power supplies. This 30V MOSFET is designed
to maximize power conversion efficiency, providing a
low R
DS(ON)
and low gate charge. The FDS7066ASN3
includes an integrated Schottky diode using Fairchild's
monolithic SyncFET technology. The performance of
the FDS7066ASN3 as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS7066N3 in parallel with a Schottky diode.
Applications
DC/DC converter
Features
19 A, 30 V
R
DS(ON)
= 4.8 m
@ V
GS
= 10 V
R
DS(ON)
= 6.0 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
4
5
3
6
2
7
1
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source
Voltage
20
V
I
D
Drain Current Continuous
(Note 1a)
19 A
Pulsed
60
P
D
Power Dissipation for Single Operation
(Note 1a)
3.0
(Note 1b)
1.7
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
0.5
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7066ASN3
FDS7066ASN3
13''
12mm
2500 units
FDS7066ASN3
FDS7066ASN3 Rev A (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V, I
D
= 1 mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, Referenced to 25
C
26
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
A
I
GSS
GateBody
Leakage
V
GS
=
20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
1
1.5
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, Referenced to 25
C
3
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V, I
D
= 19 A
V
GS
= 4.5 V, I
D
= 17.5 A
V
GS
= 10 V, I
D
= 19 A, T
J
= 125
C
4
5
6
4.8
6.0
7.2
m
I
D(on)
OnState Drain Current
V
GS
= 10 V, V
DS
= 5 V
30
A
g
FS
Forward
Transconductance V
DS
= 10 V, I
D
= 19 A
76
S
Dynamic Characteristics
C
iss
Input
Capacitance
2460
pF
C
oss
Output
Capacitance
710
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
260 pF
R
G
Gate
Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.7
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
10
20
ns
t
r
TurnOn Rise Time
12
22
ns
t
d(off)
TurnOff Delay Time
44
70
ns
t
f
TurnOff
Fall
Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
28 45 ns
Q
g
(TOT)
Total Gate Charge at Vgs=10V
V
DD
= 15 V, I
D
= 19 A, V
GS
= 5 V
44
62
nC
Q
g
Total Gate Charge at Vgs=5V
24
34
nC
Q
gs
GateSource
Charge
7
nC
Q
gd
GateDrain
Charge
8 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Schottky Diode Forward Current
4.3
A
V
SD
DrainSource Schottky Diode
Forward Voltage
V
GS
= 0 V, I
S
= 4.3 A
(Note 2)
0.5
0.7
V
t
RR
Reverse
Recovery
Time
25
ns
Q
RR
Reverse Recovery Charge
I
F
= 19 A
diF/dt = 300 A/us
23 nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 40C/W
when
mounted on a 1in
2
pad
of 2 oz copper
b)
85C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDS7066ASN3
FDS7066ASN3 Rev A (W)
Typical Characteristics
0
10
20
30
40
50
60
0
0.25
0.5
0.75
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DR
AI
N C
URR
EN
T (
A
)
V
GS
= 10V
3.5V
2.5V
4.0V
3.0V
4.5V
6.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
50
60
I
D
, DIRAIN CURRENT (A)
R
DS
(O
N)
,
NO
R
M
ALI
Z
ED
DR
AI
N-
SO
U
RCE
O
N
-
R
E
S
I
S
T
A
N
C
E
V
GS
= 3.0V
10V
4.0V
4.5V
6.0V
3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
,
NO
RMAL
I
Z
E
D
DR
AI
N-
S
O
URC
E
ON
-R
E
S
I
S
T
ANC
E
I
D
= 19A
V
GS
= 10V
0
0.004
0.008
0.012
0.016
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N)
, O
N
-R
ES
IS
TA
NC
E (
O
H
M
)
I
D
= 9.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DR
AI
N CU
RRE
NT
(A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5.0V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVER
SE DR
A
I
N
CU
R
R
EN
T (A
)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7066ASN3
FDS7066ASN3 Rev A (W)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
GS
,
GA
T
E
-S
OU
RC
E
V
O
LTAG
E
(V)
I
D
= 19A
V
DS
= 10V
15V
20V
0
500
1000
1500
2000
2500
3000
3500
0
6
12
18
24
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
A
P
ACI
T
ANC
E (
p
F
)
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
D
RAI
N C
URR
E
N
T
(
A
)
DC
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 85
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.01
0.1
1
10
100
t
1
, TIME (sec)
P(
pk), PEA
K TR
A
N
SIEN
T POWER
(W)
SINGLE PULSE
R
JA
= 85C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t
)
,
NORMAL
I
Z
ED
EF
F
E
CT
I
V
E
T
RANS
I
E
NT
TH
ERMAL
RE
SI
ST
ANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 85
o
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS7066ASN3
FDS7066ASN3 Rev A (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild's SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky diode
in parallel with a MOSFET. Figure 12 shows the reverse
recovery characteristic of the FDS7066ASN3.
Figure 12. FDS7066ASN3 SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent
size MOSFET produced without SyncFET (FDS7066N3).
Figure 13. Non-SyncFET (FDS7066N3) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
0.001
0.01
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
DS
S
, REV
E
RSE LEA
KAGE CURRE
NT (A)
T
A
= 100
o
C
T
A
= 25
o
C
T
A
= 125
o
C
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
FDS7066ASN3
0.
08A
/di
v
12.5 nS/div
0.0
8
A/
di
v
12.5 nS/div
FDS7066ASN3 Rev A (W)
Dimensional Outline and Pad Layout
FDS7066ASN3
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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