September 2004
2004 Fairchild Semiconductor Corporation
FDS7296N3 Rev C(W)
FDS7296N3
30V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET in the thermally enhanced
SO8 FLMP package has been designed specifically to
improve the overall efficiency of DC/DC converters.
Providing a balance of low R
DS(ON)
and Qg it is ideal for
synchronous rectifier applications in both isolated and
non-isolated topologies. It is also well suited for high
and low side switch applications in Point of Load
converters.
Applications
Secondary side Synchronous rectifier
Synchronous Buck VRM and POL Converters
Features
15 A, 30 V
R
DS(ON)
= 8 m
@ V
GS
= 10 V
R
DS(ON)
= 11 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
Optimized for low Qgd to enable fast switching and
reduced CdV/dt gate coupling.
SO-8 FLMP for enhanced thermal performance in an
industry-standard package outline.
S
D
S
S
SO-8
D
D
D
G
NC
S
S
S
G
D
Pin 1
Bottomless
SO-8
NC
NC
NC
4
5
3
6
2
7
1
8
Bottom-side
Drain Contact
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current Continuous
(Note 1a)
15
A
Pulsed
60
P
D
Power Dissipation for Single Operation
(Note 1a)
3.0
(Note 1b)
1.5
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
40
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
0.5
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7296N3
FDS7296N3
13''
12mm
2500 units
FD
S7296
N
3
FLMP SO-8
FDS7296N3 Rev C(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
W
DSS
Drain-Source Avalanche Energy
Single Pulse, V
DD
= 27 V, I
D
=15 A
189
mJ
I
AR
Drain-Source Avalanche Current
15
A
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V,
I
D
= 250
A
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
28
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V,
V
GS
= 0 V
1
A
I
GSS
GateBody Leakage
V
GS
=
20 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
1
1.8
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
0.5
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 15 A
V
GS
= 4.5 V,
I
D
= 13 A
V
GS
= 10 V, I
D
= 15 A,T
J
= 125
C
6.5
8.2
9.7
8
11
13
m
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 15 A
58
S
Dynamic Characteristics
C
iss
Input Capacitance
1540
pF
C
oss
Output Capacitance
430
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
140
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.0
Switching Characteristics (Note 2)
t
d(on)
TurnOn Delay Time
10
20
ns
t
r
TurnOn Rise Time
4
9
ns
t
d(off)
TurnOff Delay Time
27
44
ns
t
f
TurnOff Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
14
25
ns
Q
g
Total Gate Charge
V
DS
= 15 V, I
D
= 15 A, V
GS
= 5 V
12.7
18
nC
Q
g
Total Gate Charge
23
32
nC
Q
gs
GateSource Charge
4.2
nC
Q
gd
GateDrain Charge
V
DS
= 15 V, I
D
= 15 A, V
GS
=10 V
3.5
nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
2.5
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 2.5 A
(Note 2)
0.7
1.2
V
t
rr
Diode Reverse Recovery Time
27
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 15 A,
d
iF
/d
t
= 100 A/s
19
nC
FD
S7296
N
3
FDS7296N3 Rev C(W)
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 40C/W
when
mounted on a 1in
2
pad
of 2 oz copper
b)
85C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FD
S7296
N
3
FDS7296N3 Rev C(W)
Typical Characteristics
0
10
20
30
40
50
60
0
0.25
0.5
0.75
1
1.25
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRA
IN CU
RRE
NT
(
A
)
3.5V
6.0V
V
GS
=10V
4.0V
3.0V
4.5V
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
R
DS
(O
N)
,
NO
R
M
AL
I
Z
E
D
DRA
I
N
-S
O
URCE
O
N
-
R
E
S
I
S
TA
NCE
V
GS
= 3.5V
6.0V
4.0V
10V
4.5V
5.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(O
N)
,
N
O
RM
AL
I
Z
E
D
DR
AI
N-S
O
URC
E
O
N
-
R
E
S
I
S
T
AN
CE
I
D
= 15A
V
GS
= 10V
0.006
0.01
0.014
0.018
0.022
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N
)
,
ON
-R
ESI
ST
A
N
C
E
(OH
M
)
I
D
= 7.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DRA
I
N
CUR
RE
NT (
A
)
T
A
=125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRA
IN CURR
ENT
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FD
S7296
N
3
FDS7296N3 Rev C(W)
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
V
GS
,
G
A
TE
-S
O
URCE
V
O
LTA
G
E
(
V
)
I
D
= 15A
V
DS
= 10V
20V
15V
0
400
800
1200
1600
2000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACI
TA
NCE
(pF
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRAI
N C
URRE
NT
(A)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 85
o
C/W
T
A
= 25
o
C
10ms
1ms
100s
10s
0
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
),
P
E
A
K
TRA
N
S
I
E
N
T P
O
W
E
R (W
)
SINGLE PULSE
R
JA
= 85C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t
)
,
N
O
R
M
AL
I
Z
ED EF
F
E
CT
I
VE T
RANSI
E
NT
T
H
ERM
A
L
R
ESI
ST
ANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 85 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FD
S7296
N
3
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