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Электронный компонент: FDS7764S

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September 2002
2002 Fairchild Semiconductor Corporation
FDS7764S Rev D (W)
FDS7764S
30V N-Channel PowerTrench
SyncFET
TM
General Description
The FDS7764S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS7764S includes
an integrated Schottky diode using Fairchild's
monolithic SyncFET technology.
Applications
DC/DC converter
Motor drives
Features
13.5 A, 30 V. R
DS(ON)
= 7.5 m
@ V
GS
= 10 V
R
DS(ON)
= 9.0 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (25 nC typical)
High performance trench technology for extremely
low R
DS(ON)
and fast switching
High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source
Voltage
16
V
I
D
Drain Current Continuous
(Note 1a)
13.5 A
Pulsed
50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
30
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7764S
FDS7764S
13''
12mm
2500 units
FD
S7764S
SO8
background image
FDS7764S Rev D (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V, I
D
= 1 mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, Referenced to 25
C
23 mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
A
I
GSSF
GateBody Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
100
nA
I
GSSR
GateBody Leakage, Reverse
V
GS
= 16 V , V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
0.8
1.4
2
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 10 mA, Referenced to 25
C
2
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 13.5 A
V
GS
= 4.5 V,
I
D
= 12 A
V
GS
= 10 V, I
D
=13.5A, T
J
= 125
C
6
7
8
7.5
9
10
m
g
FS
Forward
Transconductance V
DS
= 10 V,
I
D
= 13.5 A
72
S
Dynamic Characteristics
C
iss
Input
Capacitance
2800 pF
C
oss
Output
Capacitance
530
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
195 pF
R
G
Gate
Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.4
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
9
18
ns
t
r
TurnOn
Rise
Time
7
14
ns
t
d(off)
TurnOff
Delay
Time
46
74
ns
t
f
TurnOff Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
16 29 ns
Q
g
Total Gate Charge
25
35
nC
Q
gs
GateSource
Charge
6
nC
Q
gd
GateDrain
Charge
V
DS
= 15 V, I
D
= 13.5 A,
V
GS
= 5 V
6 nC
FD
S7764S
background image
FDS7764S Rev D (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min Typ
Max
Units
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
3.5
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 3.5 A
(Note 2)
450
700 mV
t
rr
Diode Reverse Recovery Time
25
ns
Q
rr
Diode Reverse Recovery Charge
I
F
= 3.5 A,
d
iF
/d
t
= 300 A/s
(Note
2)
40 nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 50/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FD
S7764S
background image
FDS7764S Rev D (W)
Typical Characteristics
0
10
20
30
40
50
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRAI
N CURRE
NT (
A
)
2.5V
4.0V
V
GS
= 10V
5.0V
3.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
,
NO
RMALI
ZE
D
DRAI
N-
S
O
URCE
O
N
-
R
E
S
I
S
TANCE
V
GS
= 2.5V
6.0V
3.0V
3.5V
10V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
,
NO
RMALI
Z
E
D
DRAI
N-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANCE
I
D
= 13.5A
V
GS
=10V
0.004
0.008
0.012
0.016
0.02
0.024
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
,
O
N
-
R
E
S
I
S
TANCE
(
O
HM)
I
D
= 6.8A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DRAI
N CURRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
R
EVER
SE
DRAIN CURRE
NT
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FD
S7764S
background image
FDS7764S Rev D (W)
Typical Characteristics
0
2
4
6
8
10
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
GS
,
G
ATE
-
S
O
URCE
V
O
LTAG
E
(
V
)
I
D
= 13.5A
V
DS
= 10V
20V
15V
0
800
1600
2400
3200
4000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACI
TANCE
(pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (A)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
10s
100us
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
)
,
P
E
AK TRANS
I
E
NT P
O
WE
R (
W
)
SINGLE PULSE
R
JA
= 125C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(t),
N
O
R
M
A
L
I
Z
E
D
E
FFE
C
T
I
V
E
T
RANS
I
E
NT
T
H
E
R
MAL
RE
S
I
S
T
ANCE
R
JC
(t) = r(t) * R
JC
R
JC
= 125 C/W
T
J
- T
C
= P * R
JC
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FD
S7764S