June 2003
2003 Fairchild Semiconductor Corporation
FDS7766S Rev C (W)
FDS7766S
30V N-Channel PowerTrench
MOSFET
General Description
The FDS7766S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS7766S includes
an integrated Schottky diode using Fairchild's
monolithic SyncFET technology.
Applications
Synchronous rectifier
DC/DC converter
Features
17 A, 30 V
R
DS(ON)
= 5.5 m
@ V
GS
= 10 V
R
DS(ON)
= 6.5 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Fast switching
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
16
V
I
D
Drain Current Continuous
(Note 1a)
17
A
Pulsed
60
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1.0
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7766S
FDS7766S
13''
12mm
2500 units
FDS7766S
FDS7766S Rev C (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V, I
D
= 1 mA
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 15 mA, Referenced to 25C
23
mV/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
500
A
I
GSS
GateBody Leakage
V
GS
= 16 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
1
1.3
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 15 mA, Referenced to 25C
2
mV/C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V, I
D
= 17 A
V
GS
= 4.5 V, I
D
= 15.5 A
V
GS
= 10 V, I
D
= 17 A, T
J
= 125C
4.0
4.6
5.7
5.5
6.5
7.2
m
I
D(on)
OnState Drain Current
V
GS
= 10 V, V
DS
= 5 V
30
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 17 A
91
S
Dynamic Characteristics
C
iss
Input Capacitance
4785
pF
C
oss
Output Capacitance
825
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
290
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.3
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
12
22
ns
t
r
TurnOn Rise Time
12
22
ns
t
d(off)
TurnOff Delay Time
82
132
ns
t
f
TurnOff Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
30
49
ns
Q
g
Total Gate Charge
41
58
nC
Q
gs
GateSource Charge
11
nC
Q
gd
GateDrain Charge
V
DS
= 15 V, I
D
= 17 A,
V
GS
= 5 V
9
nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
3.5
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 3.5 A
(Note 2)
0.4
0.7
V
t
rr
27
ns
Q
rr
Schottky Diode Reverse Recovery I
F
= 17 A,
d
iF
/d
t
= 300 A/s
(Note 2)
28
nC
Notes: 1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 50C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size pape
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDS7766S
FDS7766S Rev C (W)
Typical Characteristics
0
10
20
30
40
50
60
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
2.5V
4.5V
V
GS
= 10V
6.0V
3.0V
2.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.5V
6.0V
3.0V
3.5V
10V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 17A
V
GS
=10V
0
0.004
0.008
0.012
0.016
0.02
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 8.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.01
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7766S
FDS7766S Rev C (W)
Typical Characteristics
0
2
4
6
8
10
0
20
40
60
80
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 17A
V
DS
= 10V
20V
15V
0
1000
2000
3000
4000
5000
6000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
10s
100us
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 125C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 125 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS7766S
FDS7766S Rev C (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild's SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDS7766S.
Figure 12. FDS7766S SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS7766).
Figure 13. Non-SyncFET (FDS7766) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.00001
0.0001
0.001
0.01
0.1
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
I
DSS
, REVERSE LEAKAGE CURRENT (A)
T
A
= 100
o
C
T
A
= 25
o
C
T
A
= 125
o
C
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature
FD
S7766S
0.08A/
0.
8A/div
12.5 nS/div
0.
8A/div
12.5 nS/div
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
Not In Production
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