September 2005
2005 Fairchild Semiconductor Corporation
FDS8670 Rev C (W)
FDS8670
30V N-Channel PowerTrench
MOSFET
General Description
This device has been designed specifically to improve
the efficiency of DC-DC converters. Using new
techniques in MOSFET construction, the various
components of gate charge and capacitance have been
optimized to reduce switching losses. Low gate
resistance and very low Miller charge enable excellent
performance with both adaptive and fixed dead time
gate drive circuits. Very low Rds(on) has been
maintained to provide an extremely versatile device.
Applications
High Efficiency DC-DC Converters:
Notebook Vcore Power Supply
Telecom Brick Synchronous Rectifier
Multi purpose Point Of Load
Features
21 A, 30 V
Max R
DS(ON)
= 3.7 m
@ V
GS
= 10 V
Max
R
DS(ON)
= 5.0 m
@ V
GS
= 4.5 V
High performance trench technology for extremely low
R
DS(ON)
and gate charge
Minimal Qgd (5.5 nC typical)
100%
R
G
tested (0.9
typical)
RoHS Compliant
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source
Voltage
16
V
Drain Current Continuous
(Note 1a)
21
I
D
Pulsed
105
A
Power Dissipation
(Note 1a)
2.5
(Note 1b)
1.2
P
D
(Note 1c)
1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8670
FDS8670
13''
12mm
2500 units
FDS86
7
0 3
0
V N-Chan
nel PowerTrench
MOSFET
FDS8670 Rev C (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V,
I
D
= 250 A
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
39 mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V,
V
GS
= 0 V
1
A
I
GSS
GateBody
Leakage
V
GS
= 16 V, V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.4
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
5 mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 21 A
V
GS
= 4.5 V, I
D
= 18 A
V
GS
=10 V, I
D
=21 A, T
J
=125
C
3.3
4.2
4.4
3.7
5.0
5.5
m
g
FS
Forward
Transconductance V
DS
= 10 V,
I
D
= 21 A
118
S
Dynamic Characteristics
C
iss
Input
Capacitance
4040 pF
C
oss
Output
Capacitance
1730 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
160 pF
R
G
Gate
Resistance
f = 1.0 MHz
0.2 0.9 1.5
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
12
21
ns
t
r
TurnOn Rise Time
11
20
ns
t
d(off)
TurnOff Delay Time
56
90
ns
t
f
TurnOff
Fall
Time
V
DD
= 15 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
68
108 ns
Q
g(TOT)
Total Gate Charge at V
GS
= 10V
58.5
82
nC
Q
g(TOT)
Total Gate Charge at V
GS
= 5V
30
42
nC
Q
gs
GateSource
Charge
9.5
nC
Q
gd
GateDrain
Charge
V
DD
= 15 V, I
D
= 21 A
5.5 nC
DrainSource Diode Characteristics and Maximum Ratings
V
SD
DrainSource
Diode
Forward
Voltage
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
0.7
1.2 V
t
rr
Diode Reverse Recovery Time
51
ns
I
RM
Diode Reverse Recovery Current
1.5
A
Q
rr
Diode Reverse Recovery Charge
I
F
= 21 A,
dI
F
/dt = 100 A/s
37 nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 50/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDS86
70 3
0
V N-Chan
nel PowerTrench
MOSFET
FDS8670 Rev C (W)
Typical Characteristics
0
17.5
35
52.5
70
87.5
105
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DR
AI
N C
U
R
R
E
NT
(A
)
3.0V
V
GS
= 10V
3.5V
4.5V
6.0V
2.5V
0.4
1
1.6
2.2
2.8
3.4
0
35
70
105
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N
)
, NO
R
M
A
L
I
Z
E
D
DRAI
N
-
S
O
URC
E
ON-
R
ES
IS
TAN
C
E
V
GS
= 2.5V
6.0V
4.0V
4.5V
10V
3.5V
3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N
)
, NO
RM
AL
IZ
ED
DRAI
N-S
O
U
RCE ON
-RE
S
IS
TA
NCE
I
D
= 21A
V
GS
= 10V
0.002
0.005
0.008
0.011
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(O
N)
, ON
-RES
ISTA
NC
E
(OHM)
I
D
= 10.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
35
70
105
1
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAI
N
CU
RREN
T
(A)
T
A
=125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
REVERSE
D
R
A
I
N CU
RREN
T
(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS86
70 3
0
V N-Chan
nel PowerTrench
MOSFET
FDS8670 Rev C (W)
Typical Characteristics
(continued)
0
2
4
6
8
10
0
10
20
30
40
50
60
Q
g
, GATE CHARGE (nC)
V
GS
, G
A
T
E
-SO
U
R
C
E VO
L
T
AG
E (V)
I
D
= 21A
V
DS
= 10V
15V
20V
0
1000
2000
3000
4000
5000
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
A
C
I
T
A
NCE
(
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRAI
N C
URRE
NT
(A
)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
100s
10s
0
20
40
60
80
100
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(
pk)
,
PEA
K
T
R
A
N
SIEN
T POWER
(W)
SINGLE PULSE
R
JA
= 125C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t),
N
O
RM
A
L
IZ
ED EF
FECT
IVE
TRA
N
S
I
E
NT TH
ERMA
L
R
E
S
I
STAN
C
E
R
JA
(t) = r(t) * R
JA
R
JA
= 125 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS86
70 3
0
V N-Chan
nel PowerTrench
MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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