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February 2006
FDS88
84 N-
Channel
Powe
rTr
e
nc
h
MO
SFET
2006 Fairchild Semiconductor Corporation
FDS8884 Rev. A
www.fairchildsemi.com
1
FDS8884
N-Channel PowerTrench
MOSFET
30V, 8.5A, 23m
General Descriptions
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Features
Max r
DS(on)
= 23m
at V
GS
= 10V, I
D
= 8.5A
Max r
DS(on)
= 30m
at V
GS
= 4.5V, I
D
= 7.5A
Low gate charge
100% R
G
Tested
RoHS Compliant
L
E
A D
F R E E
M
T
A
E
L
N
TI
O
MP
E
N
I
MOSFET Maximum Ratings
T
A
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DS
Drain to Source Voltage
30
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current Continuous (Note 1a)
8.5
A
Pulsed
40
A
E
AS
Single Pulse Avalanche Energy (Note 2)
32
mJ
P
D
Power dissipation
2.5
W
Derate above 25
o
C
20
mW/
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 150
o
C
R
JA
Thermal Resistance, Junction to Ambient (Note 1a)
50
o
C/W
R
JA
Thermal Resistance, Junction to Case (Note 1)
25
o
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDS8884
FDS8884
SO-8
330mm
12mm
2500 units
4
3
2
1
5
6
7
8
S
D
S
S
SO-8
D
D
D
G
FDS88
84 N-
Channel
Powe
rTr
e
nc
h
MO
SFET
FDS8884 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25C unless otherwise noted
Off Characteristics
On Characteristics
(Note 3)
Dynamic Characteristics
Switching Characteristics
(Note 3)
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, referenced to
25
o
C
23
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V
1
A
V
GS
= 0V
T
J
= 125
o
C
250
I
GSS
Gate to Source Leakage Current
V
GS
=
20V
100
nA
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
1.2
1.7
2.5
V
V
GS(th)
T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250
A, referenced to
25
o
C
-4.9
mV/
o
C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 8.5A,
19
23
m
V
GS
= 4.5V , I
D
= 7.5A,
23
30
V
GS
= 10V, I
D
= 8.5A,
T
J
= 125
o
C
26
32
C
iss
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
475
635
pF
C
oss
Output Capacitance
100
135
pF
C
rss
Reverse Transfer Capacitance
65
100
pF
R
G
Gate Resistance
f = 1MHz
0.9
1.6
t
d(on)
Turn-On Delay Time
V
DD
= 15V, I
D
= 8.5A
V
GS
= 10V, R
GS
= 33
5
10
ns
t
r
Rise Time
9
18
ns
t
d(off)
Turn-Off Delay Time
42
68
ns
t
f
Fall Time
21
34
ns
Q
g
Total Gate Charge
V
DS
= 15V, V
GS
= 10V
I
D
= 8.5A
9.2
13
nC
Q
g
Total Gate Charge
V
DS
= 15V, V
GS
= 5V
I
D
= 8.5A
5.0
7
nC
Q
gs
Gate to Source Gate Charge
1.5
nC
Q
gd
Gate to Drain Charge
2.0
nC
V
SD
Source to Drain Diode Voltage
I
SD
= 8.5A
0.9
1.25
V
I
SD
= 2.1A
0.8
1.0
V
t
rr
Reverse Recovery Time
I
F
= 8.5A, di/dt = 100A/
s
33
ns
Q
rr
Reverse Recovery Charge
20
nC
Notes:
1: R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
JC
is guaranteed by design while
R
CA
is determined by the user's board design.
2: Starting T
J
= 25
C, L = 1mH, I
AS
= 8A, V
DD
= 27V, V
GS
= 10V.
3: Pulse Test:Pulse Width <300
s,
Duty Cycle <2%.
b) 105
C/W when
mounted on a .04 in
2
pad of 2 oz copper
minimun pad
c) 125
C/W when
mounted on a
Scale 1 : 1 on letter size paper
a) 50C/W when
mounted on a 1 in2
pad of 2 oz copper
FDS88
84 N-
Channel
Powe
rTr
enc
h
MO
SFET
FDS8884 Rev. A
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25C unless otherwise noted
Figure 1. On Region Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
20
30
40
V
GS
= 4.5V
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 4.0V
V
GS
= 5.0V
V
GS
= 10V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5%MAX
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DR
AI
N CUR
RENT
(A)
Figure 2.
5
10
15
20
25
30
35
40
0.5
1.0
1.5
2.0
2.5
3.0
NOR
M
ALIZED
DR
AIN
TO SOUR
C
E
ON-R
ESISTAN
CE
I
D
, DRAIN CURRENT(A)
V
GS
= 3V
V
GS
= 10V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4V
V
GS
= 3.5V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5%MAX
Normalized On-Resistance vs Drain
current and Gate Voltage
Figure 3. Normalized
-80
-40
0
40
80
120
160
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 8.5A
V
GS
= 10V
T
J
, JUNCTION TEMPERATURE (
o
C)
NORM
AL
I
Z
ED
DRAIN T
O
SOURCE
O
N-
RE
S
I
S
T
ANCE
On Resistance vs Junction
Temperature
Figure 4.
2
4
6
8
10
15
20
25
30
35
40
45
50
55
60
T
J
= 25
o
C
T
J
= 150
o
C
I
D
= 8.5A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5%MAX
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(
O
N)
, DR
AIN TO
SOUR
CE
O
N
-RESIST
A
N
C
E
(
m
)
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
1
2
3
4
5
0
5
10
15
20
25
30
35
40
V
DD
= 5V
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5%MAX
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DR
AIN C
U
R
R
EN
T
(
A
)
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1E-3
0.01
0.1
1
10
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, R
EVERSE
DR
A
I
N
C
U
R
R
E
NT (A
)
T
J
= -55
o
C
T
J
= 25
o
C
T
A
= 150
o
C
V
GS
= 0V
40
Source to Drain Diode Forward Voltage
vs Source Current
FDS88
84 N-
Channel
Powe
rTr
enc
h
MO
SFET
FDS8884 Rev. A
www.fairchildsemi.com
4
Figure 7.
0
2
4
6
8
10
0
2
4
6
8
10
V
DD
= 20V
V
DD
= 10V
V
GS
,
G
A
T
E T
O
SO
UR
CE VO
LT
A
G
E(V)
Q
g
, GATE CHARGE(nC)
V
DD
= 15V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
200
300
400
500
600
700
f = 1MHz
V
GS
= 0V
CA
PA
CITA
NC
E (p
F)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
Capacitance vs Drain to Source Voltage
Figure 9. Unclamped Inductive Switching
Capability
0.01
0.1
1
10
1
10
20
STARTING T
J
= 125
o
C
STARTING T
J
= 25
o
C
I
AS
, AV
AL
ANCHE
CURRENT
(
A
)
20
t
AV
, TIME IN AVALANCHE(ms)
Figure 10.
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
V
GS
= 10V
V
GS
= 4.5V
I
D
,
D
RAI
N
CU
RR
E
NT
(
A
)
T
A
, AMBIENT TEMPERATURE(
o
C)
R
JA = 50
o
C/W
Maximum Continuous Drain Current vs
Ambient Temperature
Figure 11.
0.1
1
10
100
0.01
0.1
1
10
100
DC
1s
100ms
10ms
1ms
100us
10us
I
D
, DR
AI
N CUR
RE
N
T
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
o
C
Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
10
100
1000
V
GS
=10V
SINGLE PULSE
t, PULSE WIDTH (s)
P
(P
K
)
,
PEAK
TRA
N
SIENT PO
W
ER
(
W
)
2000
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 TA
125
------------------------
Typical Characteristics
T
J
= 25C unless otherwise noted
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1E-3
0.01
0.1
1
NOR
M
ALIZED TH
ERM
A
L
I
M
P
E
DAN
CE
,
Z
JA
t, RECTANGULAR PULSE DURATION(s)
D =
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE-DESCENDING ORDER
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
FDS88
84 N-
Channel
Powe
rTr
enc
h
MO
SFET
FDS8884 Rev. A
www.fairchildsemi.com
5
Figure 13. Transient Thermal Response Curve
Typical Characteristics
T
J
= 25C unless otherwise noted
FDS8884 Rev. A
www.fairchildsemi.com
6
FDS8884 N-Channel PowerTrench
MO
SFET
TRADEMARKS
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intended to be an exhaustive list of all such trademarks.
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
ScalarPumpTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TCMTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
WireTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
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