March 1998
FDS8947A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDS8947A
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage
-20
V
I
D
Drain Current - Continuous
(Note 1a)
- 4.0
A
- Pulsed
-20
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
C/W
FDS8947A Rev.B
-4.0 A, -30 V. R
DS(ON)
= 0.052
@ V
GS
= -10 V
R
DS(ON)
= 0.080
@ V
GS
= -4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
S1
D1
S2
G1
SO-8
D2
D2
D1
G2
FDS
8947A
pin
1
1
5
7
8
2
3
4
6
1998 Fairchild Semiconductor Corporation
Electrical Characteristics (
T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 A
-30
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= -250 A, Referenced to 25
o
C
-23
mV /
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -24 V, V
GS
= 0 V
-1
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
-100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 A
-1
-1.5
-3
V
V
GS(th)
/
T
J
Gate Threshold Voltage Temp. Coefficient
I
D
= -250 A, Referenced to 25
o
C
4
mV /
o
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -4 A
0.044
0.052
T
J
=125C
0.06
0.085
V
GS
= -4.5 V, I
D
= -3.2 A
0.067
0.08
I
D(ON)
On-State Drain Current
V
GS
= -10 V, V
DS
= -5 V
-20
A
g
FS
Forward Transconductance
V
DS
= -10 V, I
D
= -4 A
8
S
DYNAMIC CH ARACTERISTICS
C
iss
Input Capacitance
V
DS
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
730
pF
C
oss
Output Capacitance
400
pF
C
rss
Reverse Transfer Capacitance
90
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DS
= -10 V, I
D
= -1 A
11
20
ns
t
r
Turn - On Rise Time
V
GS
= -10 V , R
GEN
= 6
10
18
t
D(off)
Turn - Off Delay Time
90
110
t
f
Turn - Off Fall Time
55
80
Q
g
Total Gate Charge
V
DS
= -10 V, I
D
= -4 A,
19
27
nC
Q
gs
Gate-Source Charge
V
GS
= -10 V
3.5
Q
gd
Gate-Drain Charge
3.6
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
-1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-0.75
-1.2
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
F
= -1.3 A
dI
F
/dt = 100 A/s
48
100
ns
I
rr
Reverse Recovery Current
0.8
A
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
FDS8947A Rev.B
c. 135
O
C/W on a 0.003 in
2
pad of 2oz copper.
b. 125
O
C/W on a 0.02 in
2
pad of 2oz copper.
a. 78
O
C/W on a 0.5 in
2
pad of 2oz copper.
FDS8947A Rev.B
0
4
8
12
16
20
0.5
1
1.5
2
2.5
3
-I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V =-3.5V
GS
D
R , NORMALIZED
DS(on)
-5.0V
-4.5V
-4.0V
-10V
-6.0V
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with
Drain Current and Gate
Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R , NORMALIZED
DS(ON)
V = -10V
GS
I = -4.0A
D
Figure 3. On-Resistance Variation with
Temperature.
1
2
3
4
5
6
0
5
10
15
20
-V , GATE TO SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
V = -5V
DS
GS
D
T = -55C
J
125C
25C
Figure 5. Transfer Characteristics
.
0
0.3
0.6
0.9
1.2
1.5
0.0001
0.001
0.01
0.1
1
5
20
-V , BODY DIODE FORWARD VOLTAGE (V)
-I , REVERSE DRAIN CURRENT (A)
25C
-55C
V = 0V
GS
SD
S
T = 125C
J
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
2
4
6
8
10
0
0.05
0.1
0.15
0.2
0.25
0.3
-V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
T = 25C
A
I = -2A
D
T = 125C
A
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
0
5
10
15
20
-V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN-SOURCE CURRENT (A)
V =-10V
GS
DS
D
-4.0V
-4.5V
-3.5V
-3.0V
-6.0V
-5.0V
FDS8947A Rev.B
0
5
10
15
20
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-V , GATE-SOURCE VOLTAGE (V)
g
GS
V = -5V
DS
-10V
-15V
I = -4.0A
D
0.1
0.2
0.5
1
2
5
10
20 30
50
0.01
0.05
0.1
0.5
1
2
5
20
50
-V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
DS
A
-V = -10V
SINGLE PULSE
R = 135C/W
T = 25C
JA
GS
A
DC
1s
100ms
10ms
1ms
10s
100us
0.01
0.1
0.5
1
10
50 100
300
0
5
10
15
20
25
30
SINGLE PULSE TIME (sec)
POWER (W)
SINGLE PULSE
R =See Note 1C
T = 25C
JA
A
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.2
0.5
1
2
5
10
20 30
50
100
200
300
500
1000
2000
-V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
(continued)
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = 135C/W
JA
JA
JA
T - T = P * R (t)
JA
A
J
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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