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Электронный компонент: FDT459N

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March 1998

FDT459N
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDT459N
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage - Continuous
20
V
I
D
Maximum Drain Current - Continuous
(Note 1a)
6.5
A
- Pulsed
20
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
C
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
C/W
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
12
C/W
* Order option J23Z for cropped center drain lead.
FDT459NRev.C
6.5 A, 30 V. R
DS(ON)
= 0.035
@ V
GS
= 10 V
R
DS(ON)
= 0.055
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
SOIC-16
SuperSOT
TM
-3
SuperSOT
TM
-8
SO-8
SOT-223
SuperSOT
TM
-6
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance. These products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.
D
D
S
G
D
S
G
1998 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 A
30
V
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
I
D
= 250 A, Referenced to 25
o
C
33
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
A
T
J
=55C
10
A
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
1.6
2
V
V
GS(th)
/
T
J
Gate Threshold Voltage Temp.Coefficient
I
D
= 250 A, Referenced to 25
o
C
-4.2
mV/
o
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 6.5 A
0.031
0.035
T
J
=125C
0.044
0.06
V
GS
= 4.5 V, I
D
= 5.5 A
0.046
0.055
I
D(ON)
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
20
A
g
FS
Forward Transconductance
V
DS
= 10 V, I
D
= 6.5 A
16
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
365
pF
C
oss
Output Capacitance
210
pF
C
rss
Reverse Transfer Capacitance
70
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
5.2
11
ns
t
r
Turn - On Rise Time
8.2
16
ns
t
D(off)
Turn - Off Delay Time
6
12
ns
t
f
Turn - Off Fall Time
16
26
ns
Q
g
Total Gate Charge
V
DS
= 10 V, I
D
= 6.5 A,
V
GS
= 10 V
12
17
nC
Q
gs
Gate-Source Charge
2.2
nC
Q
gd
Gate-Drain Charge
3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
2.5
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.5 A
(Note 2)
0.8
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JC
is guaranteed by
design while R
CA
is determined by the user's board design.
Typical R
JA
using the board layouts shown below on FR-4 PCB in a still air environment:
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDT459NRev.C
a. 42
o
C/W when mounted on a 1 in
2
pad of
2oz Cu.
b. 95
o
C/W when mounted on a 0.066 in
2
pad of 2oz Cu.
c. 110
o
C/W when mounted on a 0.00123
in
2
pad of 2oz Cu.
FDT459NRev.C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (C)
DRAIN-SOURCE ON-RESISTANCE
J
R NORMALIZED
DS(ON)
V = 10V
GS
I = 6.5A
D
0
1
2
3
4
5
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
V = 10V
GS
DS
D
5.0
6.0
3.0
3.5
4.0
4.5
R , NORMALIZED
DS(ON)
0
5
10
15
20
25
30
0.5
1
1.5
2
2.5
3
3.5
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
V = 3.5V
GS
D
5.0
4.0
10
4.5
6.0
2
4
6
8
10
0.02
0.04
0.06
0.08
0.1
0.12
0.14
V , GATE TO SOURCE VOLTAGE (V)
GS
R , ON-RESISTANCE (OHM)
DS(ON)
I = 6.5A
D
T = 125C
J
25C
1
2
3
4
5
6
0
5
10
15
20
25
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55C
J
125C
25C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
20
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
25C
-55C
V = 0V
GS
SD
S
T = 125C
J
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDT459NRev.C
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
0
2
4
6
8
10
12
14
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
V = 5V
DS
10V
I = 6.5A
D
15V
0.1
0.2
0.5
1
2
5
10
20 30
50
0.01
0.05
0.1
0.5
1
2
5
10
20
40
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
A
DC
DS
1s
100ms
10ms
1ms
10s
V =10V
SINGLE PULSE
R = See Note 1c
T = 25C
JA
GS
A
100us
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
A
J
P(pk)
t
1
t
2
JA
JA
JA
JA
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
0.1
0.3
1
3
10
30
30
50
100
200
400
1000
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
0.001
0.01
0.1
1
10
100 300
0
40
80
120
160
200
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R = see note 1c
T = 25C
JA
A