2004 Fairchild Semiconductor Corporation
April 2004
FDT461N Rev. A1
FDT461N
FDT461N
N-Channel Logic Level PowerTrench
MOSFET
100V, 0.4A, 2.5
Features
r
DS(ON)
= 1.45
(Typ.), V
GS
= 4.5V, I
D
= 0.4A
Q
g
(tot) = 2.36nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Q
RR
Body Diode
Applications
Servo Motor Load Control
DC-DC converters
MOSFET Maximum Ratings
T
A
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
100
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current
0.54
A
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
JA
= 110
o
C/W)
Continuous (T
A
= 25
o
C, V
GS
= 4.5V, R
JA
= 110
o
C/W)
0.4
A
Pulsed
Figure 4
A
E
AS
Single Pulse Avalanche Energy (Note 1)
6.3
mJ
P
D
Power dissipation
1.13
W
Derate above 25
o
C
9
mW/
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 150
o
C
R
JA
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.171 in
2
110
o
C/W
R
JA
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.068 in
2
128
o
C/W
R
JA
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.026 in
2
147
o
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
461
FDT461N
SOT-223
13"
12mm
2500 units
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
S
G
D
D
SOT-223
2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
FDT461N
Electrical Characteristics
T
A
= 25C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting T
J
= 25C, L = 67mH, I
AS
= 0.43A.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
100
-
-
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 80V
-
-
1
A
V
GS
= 0V
T
C
= 125
o
C
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
=
20V
-
-
100
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
0.8
-
2
V
r
DS(ON)
Drain to Source On Resistance
I
D
= 0.54A, V
GS
= 10V
-
1.40
2.0
I
D
= 0.4A, V
GS
= 4.5V
-
1.45
2.5
I
D
= 0.54A, V
GS
= 10V,
T
J
= 150
o
C
-
2.80
4.0
C
ISS
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
74
-
pF
C
OSS
Output Capacitance
-
11
-
pF
C
RSS
Reverse Transfer Capacitance
-
2.5
-
pF
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 0V to 10V
V
DD
= 50V
I
D
= 0.54A
I
g
= 1.0mA
2.36
4.0
nC
Q
g(4.5)
Total Gate Charge at 4.5V
V
GS
= 0V to 4.5V
-
1.27
2.0
nC
Q
g(TH)
Threshold Gate Charge
V
GS
= 0V to 1V
0.1
0.15
nC
Q
gs
Gate to Source Gate Charge
-
0.37
-
nC
Q
gs2
Gate Charge Threshold to Plateau
-
0.27
-
nC
Q
gd
Gate to Drain "Miller" Charge
-
0.25
-
nC
t
ON
Turn-On Time
V
DD
= 50V, I
D
= 0.54A
V
GS
= 10V, R
GS
= 120
-
-
6.5
ns
t
d(ON)
Turn-On Delay Time
-
3
-
ns
t
r
Rise Time
-
1.3
-
ns
t
d(OFF)
Turn-Off Delay Time
-
63
-
ns
t
f
Fall Time
-
12
-
ns
t
OFF
Turn-Off Time
-
-
113
ns
V
SD
Source to Drain Diode Voltage
I
SD
= 0.54A
-
-
1.25
V
I
SD
= 0.3A
-
-
1.0
V
t
rr
Reverse Recovery Time
I
SD
= 0.54A, dI
SD
/dt = 100A/
s
-
-
22
ns
Q
RR
Reverse Recovered Charge
I
SD
= 0.54A, dI
SD
/dt = 100A/
s
-
-
18
nC
2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
FDT461N
Typical Characteristics
T
A
= 25C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
A
, AMBIENT TEMPERATURE (
o
C)
P
O
W
E
R DIS
S
I
P
A
T
ION M
U
L
T
IP
L
I
E
R
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
0.2
0.4
25
50
75
100
125
150
0.6
I
D
, DRAIN CUR
RENT
(
A
)
T
A
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 4.5V
t, RECTANGULAR PULSE DURATION (s)
Z
JA
, NORM
AL
IZ
ED
T
H
ERM
A
L
IM
PE
DANCE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
0.01
0.1
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
2
10
-5
I
DM
, PEA
K CURRENT
(
A
)
t, PULSE WIDTH (s)
T
A
= 25
o
C
I = I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 4.5V
1
10
0.4
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
FDT461N
Figure 5. Forward Bias Safe Operating Area
Figure 6. Transfer Characteristics
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
Typical Characteristics
T
A
= 25C unless otherwise noted
0.01
0.1
1
1
10
120
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURREN
T
(
A
)
T
J
= MAX RATED
T
A
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
s
1ms
10ms
0
0.4
0.8
1.2
1.6
1.5
2.0
2.5
3.0
3.5
I
D
, DRAIN CURRE
NT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
0.4
0.8
1.2
1.6
0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
, DRAIN CU
RRENT
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 2.5V
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
o
C
V
GS
= 3V
V
GS
= 4.5V
1.0
1.5
2.0
2.5
3.0
2
3
4
5
6
7
8
9
10
I
D
= 0.2A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 0.54A
r
DS
(
O
N
)
,
DRA
I
N
T
O
SOURCE
ON RE
SIST
ANCE
(
)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NORM
AL
IZ
ED DR
AIN
T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RES
I
ST
ANCE
V
GS
= 10V, I
D
= 0.54A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
V
GS
= V
DS
, I
D
= 250
A
NORM
AL
IZ
E
D
GA
T
E
T
J
, JUNCTION TEMPERATURE (
o
C)
T
HRESH
O
L
D VO
L
T
A
G
E
2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
FDT461N
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 12. Capacitance vs Drain to Source
Voltage
Figure 13. Gate Charge Waveforms for Constant Gate Current
Typical Characteristics
T
A
= 25C unless otherwise noted
0.9
1.0
1.1
-80
-40
0
40
80
120
160
1.2
T
J
, JUNCTION TEMPERATURE (
o
C)
NORM
A
L
IZ
E
D
DRAIN T
O
S
O
URCE
I
D
= 250
A
BREAKD
O
W
N VOL
T
A
G
E
1
10
100
0.1
1
10
100
200
C, CA
P
ACIT
ANCE
(
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
V
GS
,
GA
T
E
T
O
SOURCE
V
O
L
T
AGE
(
V
)
Q
g
, GATE CHARGE (nC)
V
DD
= 50V
I
D
= 0.54A
Test Circuits and Waveforms
Figure 14. Unclamped Energy Test Circuit
Figure 15. Unclamped Energy Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
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