ChipFind - документация

Электронный компонент: FDU6680

Скачать:  PDF   ZIP
November 2004
2004 Fairchild Semiconductor Corporation
FDD6680/FDU6680 Rev. C1(W)
FDD6680 / FDU6680
30V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Motor Drives
Features
46 A, 30 V
R
DS(ON)
= 10 m
@ V
GS
= 10 V
R
DS(ON)
= 15 m
@ V
GS
= 4.5 V
Low gate charge
Fast Switching Speed
High performance trench technology for extremely
low R
DS(ON)
G
S
D
TO-252
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Continuous Drain Current @T
C
=25C
(Note 3)
46
A
@T
A
=25C
(Note 1a)
12
Pulsed
(Note 1a)
100
Power Dissipation
@T
C
=25C
(Note 3)
56
@T
A
=25C
(Note 1a)
3.3
P
D
@T
A
=25C
(Note 1b)
1.5
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +175
C
Thermal Characteristics
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
2.7
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
45
R
JA
(Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
Quantity
FDD6680
FDD6680
D-PAK (TO-252)
13''
12mm
2500 units
FDU6680
FDU6680
I-PAK (TO-251)
Tube
N/A
75
FDD6680/FDU6680
FDD6680/FDU6680 Rev. C1(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
E
AS
Drain-Source Avalanche Energy
Single Pulse, V
DD
= 25 V, I
D
= 12A
180
mJ
I
AS
Drain-Source Avalanche Current
12
A
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V,
I
D
= 250
A
30
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A,Referenced to 25
C
24
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24 V,
V
GS
= 0 V
1
A
I
GSS
GateBody Leakage
V
GS
=
20 V,
V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
A
1
1.9
3
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A,Referenced to 25
C
5
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 10 V,
I
D
= 12 A
V
GS
= 4.5 V,
I
D
= 10 A
V
GS
= 10 V, I
D
= 12 A,T
J
=125
C
7.7
9.9
11.4
10
15
16
m
I
D(on)
OnState Drain Current
V
GS
= 10 V,
V
DS
= 5 V
50
A
g
FS
Forward Transconductance
V
DS
= 10 V,
I
D
= 12 A
47
S
Dynamic Characteristics
C
iss
Input Capacitance
1230
pF
C
oss
Output Capacitance
325
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f = 1.0 MHz
150
pF
R
G
Gate Resistance
V
GS
= 15 mV,
f = 1.0 MHz
1.5
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
10
19
ns
t
r
TurnOn Rise Time
7
13
ns
t
d(off)
TurnOff Delay Time
29
46
ns
t
f
TurnOff Fall Time
V
DD
= 15 V,
I
D
= 1 A,
V
GS
= 10 V,
R
GEN
= 6
12
21
ns
Q
g
Total Gate Charge
13
18
nC
Q
gs
GateSource Charge
3.5
nC
Q
gd
GateDrain Charge
V
DS
= 15V,
I
D
= 12 A,
V
GS
= 5 V
5.1
nC
FDD6680/FDU6680
FDD6680/FDU6680 Rev. C1(W)
D
R
P
DS(ON)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
2.3
A
V
SD
DrainSource Diode Forward Voltage V
GS
= 0 V,
I
S
= 2.3 A
(Note 2)
0.76
1.2
V
t
rr
Diode Reverse Recovery Time
24
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 12 A, d
iF
/d
t
= 100 A/s
13
nC
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) R
JA
= 45C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
JA
= 96C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
FDD6680/FDU6680
FDD6680/FDU6680 Rev. C1(W)
Typical Characteristics
0
20
40
60
80
100
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
3.0V
4.0V
V
GS
= 10.0V
3.5V
4.5V
6.0V
5.0V
0.8
1
1.2
1.4
1.6
1.8
0
20
40
60
80
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.5V
4.0V
5.0V
6.0V
4.5V
10.0V
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 12A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
0.03
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 6A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
15
30
45
60
75
90
1.5
2
2.5
3
3.5
4
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
=-55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6680/FDU6680
FDD6680/FDU6680 Rev. C1(W)
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
25
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 12 A
V
DS
= 10V
15V
20V
0
300
600
900
1200
1500
1800
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
1000
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
1ms
100s
10
0
20
40
60
80
100
0.01
0.1
1
10
100
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 96C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 96 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6680/FDU6680
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
Rev. I13
ACExTM
ActiveArrayTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
VCXTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM