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Электронный компонент: FDU8780

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March 2006
FDD8780/FDU8780 N-Channel PowerTrench
MOSFET
2006 Fairchild Semiconductor Corporation
FDD8780/FDU8780 Rev. B
www.fairchildsemi.com
1
FDD8780/FDU8780
N-Channel PowerTrench
MOSFET
25V, 35A, 8.5m
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
Features
Max r
DS(on)
= 8.5m
at V
GS
= 10V, I
D
= 35A
Max r
DS(on)
= 12.0m
at V
GS
= 4.5V, I
D
= 35A
Low gate charge: Q
g(10)
= 21nC(Typ), V
GS
= 10V
Low gate resistance
Avalanche rated and 100% tested
RoHS Compliant
MOSFET Maximum Ratings
T
C
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DS
Drain to Source Voltage
25
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current -Continuous (Package Limited)
35
A
-Continuous (Die Limited)
60
-Pulsed (Note 1)
224
E
AS
Single Pulse Avalanche Energy (Note 2)
73
mJ
P
D
Power Dissipation
50
W
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
C
R
JC
Thermal Resistance, Junction to Case TO-252,TO-251
3.0
C/W
R
JA
Thermal Resistance, Junction to Ambient TO-252,TO-251
100
C/W
R
JA
Thermal Resistance, Junction to Ambient TO-252,1in
2
copper pad area
52
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD8780
FDD8780
TO-252AA
13''
12mm
2500 units
FDU8780
FDU8780
TO-251AA
N/A(Tube)
N/A
75 units
FDU8780
FDU8780_F071
TO-251AA
N/A(Tube)
N/A
75 units
L
E
A D
F R E E
M
T
A
E
L
N
TI
O
MP
E
N
I
D
G
S
Short Lead I-PAK
I-PAK
(TO-251AA)
G D S
G
D
S
FDD8780/FDU8780 N-Channel PowerTrench
MOSFET
FDD8780/FDU8780 Rev. B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
25
V
B
VDSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, referenced to
25C
12
mV/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 20V,
V
GS
= 0V
1
A
T
J
= 150
C
250
I
GSS
Gate to Source Leakage Current
V
GS
= 20V
100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
1.2
1.8
2.5
V
V
GS(th)
T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250
A, referenced to
25C
-6.3
mV/C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10V, I
D
= 35A
6.5
8.5
m
V
GS
= 4.5V, I
D
= 35A
9.1
12.0
V
GS
= 10V, I
D
= 35A
T
J
= 175C
10.4
15.0
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 13V, V
GS
= 0V,
f = 1MHz
1080
1440
pF
C
oss
Output Capacitance
265
355
pF
C
rss
Reverse Transfer Capacitance
180
270
pF
R
g
Gate Resistance
f = 1MHz
0.9
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 13V, I
D
= 35A
V
GS
= 10V, R
GS
= 17
7
14
ns
t
r
Rise Time
9
18
ns
t
d(off)
Turn-Off Delay Time
43
69
ns
t
f
Fall Time
24
38
ns
Q
g
Total Gate Charge
V
GS
= 0V to 10V
V
DD
= 13V
I
D
= 35A
I
g
= 1.0mA
21
29
nC
Q
g
Total Gate Charge
V
GS
= 0V to 5V
11.2
16
nC
Q
gs
Gate to Source Gate Charge
3.5
nC
Q
gd
Gate to Drain "Miller"Charge
4.7
nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0V, I
S
= 35A
0.92
1.25
V
V
GS
= 0V, I
S
= 15A
0.84
1.0
t
rr
Reverse Recovery Time
I
F
= 35A, di/dt = 100A/
s
28
42
ns
Q
rr
Reverse Recovery Charge
I
F
= 35A, di/dt = 100A/
s
20
30
nC
Notes:
1:
Pulse time < 300
s, Duty cycle = 2%.
2: Starting T
J
= 25
o
C, L = 0.3mH, I
AS
= 22A ,V
DD
= 23V, V
GS
= 10V.
FDD8780/FDU8780 N-Channel PowerTrench
MOSFET
FDD8780/FDU8780 Rev. B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25C unless otherwise noted
Figure 1. On Region Characteristics
0
1
2
3
4
0
10
20
30
40
50
60
70
PULSE DURATION = 80
s
DUTY CYCLE = 0.5%MAX
V
GS
=
3V
V
GS
=
3.5V
V
GS
=
4.5V
V
GS
=
10V
I
D
, DR
AI
N CUR
RE
N
T
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized
0
10
20
30
40
50
60
70
0
1
2
3
4
5
6
7
PULSE DURATION = 80
s
DUTY CYCLE = 0.5%MAX
NOR
M
AL
IZ
ED
D
R
AIN
TO SOUR
C
E
ON-R
ESIST
AN
C
E
I
D
, DRAIN CURRENT(A)
V
GS
=
10V
V
GS
=
4.5V
V
GS
= 3.5V
V
GS
= 3V
On-Resistance vs Drain
Current and Gate Voltage
Figure 3.
-80
-40
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 35A
V
GS
= 10V
NO
RM
AL
I
Z
E
D
DR
AIN T
O

SO
U
R
C
E

O
N
-R
ESIST
A
N
C
E
T
J
, JUNCTION TEMPERATURE (
o
C)
Normalized On Resistance vs Junction
Temperature
Figure 4.
3.0
4.5
6.0
7.5
9.0
0
10
20
30
40
PULSE DURATION = 80
s
DUTY CYCLE = 0.5%MAX
T
J
= 175
o
C
T
J
= 25
o
C
I
D
= 35A
r
D
S
(
on)
, O
N
-R
ESI
STAN
CE

(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
10
20
30
40
50
60
70
PULSE DURATION = 80
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
I
D
, DR
AIN C
U
R
R
EN
T
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= 0V
I
S
,

R
EVERSE DR
AIN CU
RR
ENT
(A
)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
200
Source to Drain Diode Forward
Voltage vs Source Current
FDD8780/FDU8780 N-Channel PowerTrench
MOSFET
FDD8780/FDU8780 Rev. B
www.fairchildsemi.com
4
Figure 7.
0
5
10
15
20
25
0
2
4
6
8
10
V
DD
= 13V
V
DD
= 16V
V
DD
= 10V
V
GS
,
G
A
T
E T
O

SO
UR
CE VO
LT
A
G
E(V)
Q
g
, GATE CHARGE(nC)
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
f = 1MHz
V
GS
= 0V
C
A
PA
CITA
NC
E (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
4000
30
Capacitance vs Drain to Source Voltage
Figure 9.
0.01
0.1
1
10
100
1
10
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
AS
, AV
ALANCHE
CURRE
NT
(
A
)
300
50
Unclamped Inductive Switching
Capability
Figure 10.
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
I
D
,
D
RAI
N
CU
RR
E
NT
(
A
)
T
A
, AMBIENT TEMPERATURE(
o
C)
R
JC
= 3.0
o
C/W
V
GS
= 4.5V
V
GS
= 10V
Maximum Continuous Drain Current vs
Case Temperature
Figure 11.
1
10
0.1
1
10
100
500
100us
1ms
10ms
10us
I
D
, DR
AI
N CUR
RE
N
T
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
T
J
= MAX RATED
T
C
=
25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY
r
DS(on)
DC
50
LIMITED BY
PACKAGE
Forward Bias Safe Operating Area
Figure 12. Single
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
1000
30
SINGLE PULSE
V
GS
= 10V
P
( PK
)
,
P
E
A
K
TR
ANS
I
E
NT
P
O
WE
R
(
W
)
t
,
PULSE WIDTH
(s)
7000
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 T
C
150
-----------------------
Pulse Maximum Power
Dissipation
Typical Characteristics
T
J
= 25C unless otherwise noted
FDD8780/FDU8780 N-Channel PowerTrench
MOSFET
FDD8780/FDU8780 Rev. B
www.fairchildsemi.com
5
Figure 13. Transient Thermal Response Curve
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
DUTY CYCLE-DESCENDING ORDER
NO
RM
AL
I
Z
E
D
T
H
E
R
M
A
L
I
MPEDA
N
C
E, Z
JC
t, RECTANGULAR PULSE DURATION(s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
Typical Characteristics
T
J
= 25C unless otherwise noted
FDD8780/FDU8780 Rev. B
www.fairchildsemi.com
6
FDD8780/FDU8780 N-Channel PowerTrench
MOSFET
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
ScalarPumpTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TCMTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
WireTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18