2004 Fairchild Semiconductor Corporation
November 2004
FDU8880 Rev. B2
FDU8880
FDU8880
N-Channel PowerTrench
MOSFET
30V, 58A, 10m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Applications
DC/DC converters
Features
r
DS(ON)
= 10m
, V
GS
= 10V, I
D
= 35A
r
DS(ON)
= 13m
, V
GS
= 4.5V, I
D
= 35A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
MOSFET Maximum Ratings
T
C
= 25C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
V
DSS
Drain to Source Voltage
30
V
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current
58
A
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V) (Note 1)
51
A
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
JA
= 52
o
C/W)
13
A
Pulsed
Figure 4
A
E
AS
Single Pulse Avalanche Energy (Note 2)
53
mJ
P
D
Power dissipation
55
W
Derate above 25
o
C
0.37
W/
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
o
C
R
JC
Thermal Resistance Junction to Case TO-251
2.73
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-251
100
o
C/W
R
JA
Thermal Resistance Junction to Ambient TO-251, 1in
2
copper pad area
52
o
C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDU8880
FDU8880
TO-251AA
Tube
N/A
75 units
FDU8880
FDU8880_NL (Note 3)
TO-251AA
Tube
N/A
75 units
D
G
S
G D S
I-PAK
(TO-251AA)
2004 Fairchild Semiconductor Corporation
FDU8880 Rev. B2
FDU8880
Electrical Characteristics
T
C
= 25C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Package current limitation is 35A.
2: Starting T
J
= 25C, L = 0.14mH, I
AS
= 28A, V
DD
= 27V, V
GS
= 10V.
3: FDU8880_NL is lead free product. FDU8880_NL marking will appear on the reel label.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0V
30
-
-
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V
-
-
1
A
V
GS
= 0V
T
C
= 150
o
C
-
-
250
I
GSS
Gate to Source Leakage Current
V
GS
=
20V
-
-
100
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
1.2
-
2.5
V
r
DS(ON)
Drain to Source On Resistance
I
D
= 35A, V
GS
= 10V
-
0.007
0.010
I
D
= 35A, V
GS
= 4.5V
-
0.009
0.013
I
D
= 35A, V
GS
= 10V,
T
J
= 175
o
C
-
0.013
0.016
C
ISS
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
1260
-
pF
C
OSS
Output Capacitance
-
260
-
pF
C
RSS
Reverse Transfer Capacitance
-
150
-
pF
R
G
Gate Resistance
V
GS
= 0.5V, f = 1MHz
-
2.3
-
Q
g(TOT)
Total Gate Charge at 10V
V
GS
= 0V to 10V
V
DD
= 15V
I
D
= 35A
I
g
= 1.0mA
-
23
31
nC
Q
g(5)
Total Gate Charge at 5V
V
GS
= 0V to 5V
-
13
17
nC
Q
g(TH)
Threshold Gate Charge
V
GS
= 0V to 1V
-
1.3
1.7
nC
Q
gs
Gate to Source Gate Charge
-
3.8
-
nC
Q
gs2
Gate Charge Threshold to Plateau
-
2.5
-
nC
Q
gd
Gate to Drain "Miller" Charge
-
5.0
-
nC
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 35A
V
GS
= 10V, R
GS
= 10
-
-
147
ns
t
d(ON)
Turn-On Delay Time
-
8
-
ns
t
r
Rise Time
-
91
-
ns
t
d(OFF)
Turn-Off Delay Time
-
38
-
ns
t
f
Fall Time
-
33
-
ns
t
OFF
Turn-Off Time
-
-
108
ns
V
SD
Source to Drain Diode Voltage
I
SD
= 35A
-
-
1.25
V
I
SD
= 15A
-
-
1.0
V
t
rr
Reverse Recovery Time
I
SD
= 35A, dI
SD
/dt = 100A/
s
-
-
27
ns
Q
RR
Reverse Recovered Charge
I
SD
= 35A, dI
SD
/dt = 100A/
s
-
-
14
nC
2004 Fairchild Semiconductor Corporation
FDU8880 Rev. B2
FDU8880
Typical Characteristics
T
C
= 25C unless otherwise noted
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
C
, CASE TEMPERATURE (
o
C)
P
O
W
E
R DIS
S
IP
A
T
ION MUL
T
IP
L
I
E
R
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
0
10
20
30
40
50
60
25
50
75
100
125
150
175
I
D
, DRAIN CURRENT
(
A
)
T
C
, CASE TEMPERATURE (
o
C)
CURRENT LIMITED
BY PACKAGE
V
GS
= 4.5V
V
GS
= 10V
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
JC
, NORM
AL
IZ
ED
TH
ERM
A
L I
M
PED
AN
CE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JC
x R
JC
+ T
C
P
DM
t
1
t
2
0.5
0.2
0.1
0.05
0.01
0.02
DUTY CYCLE - DESCENDING ORDER
SINGLE PULSE
100
30
500
I
DM
,
P
E
AK CURRE
NT
(
A
)
t, PULSE WIDTH (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 4.5V
V
GS
= 10V
2004 Fairchild Semiconductor Corporation
FDU8880 Rev. B2
FDU8880
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25C unless otherwise noted
0.1
1
10
100
1000
1
10
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
D
RAIN CURRENT
(
A
)
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
s
1ms
DC
100
s
10ms
1
10
100
0.01
0.1
1
500
10
I
AS
, A
V
AL
ANCHE
CURRENT
(
A
)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0
20
40
60
80
1.5
2.0
2.5
3.0
3.5
4.0
I
D
, DRAIN CUR
RENT
(
A
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= -55
o
C
T
J
= 25
o
C
0
20
40
60
80
0
0.25
0.5
0.75
1.0
I
D
,
DRA
I
N
C
URRENT
(
A
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 4V
V
GS
= 3V
V
GS
= 5V
5
10
15
20
25
2
4
6
8
10
I
D
= 1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 35A
r
DS(
O
N)
, DRAIN T
O
S
O
U
RCE
ON RES
I
ST
ANCE
(
m
)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-80
-40
0
40
80
120
160
200
N
O
R
M
AL
IZ
E
D
DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RE
SIST
ANC
E
V
GS
= 10V, I
D
= 35A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
2004 Fairchild Semiconductor Corporation
FDU8880 Rev. B2
FDU8880
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 13. Capacitance vs Drain to Source
Voltage
Figure 14. Gate Charge Waveforms for Constant
Gate Current
Typical Characteristics
T
C
= 25C unless otherwise noted
0.4
0.6
0.8
1.0
1.2
-40
0
40
80
120
160
200
-80
V
GS
= V
DS
, I
D
= 250
A
NO
RM
A
L
I
Z
ED
G
A
T
E
T
J
, JUNCTION TEMPERATURE (
o
C)
T
HRES
H
OL
D V
O
L
T
A
G
E
0.90
0.95
1.00
1.05
1.10
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
NORM
AL
IZ
ED
DR
AIN T
O
SOURCE
I
D
= 250
A
B
R
EAKDO
WN V
O
L
T
A
G
E
100
1000
0.1
1
10
2000
30
C, CAP
A
C
IT
ANCE (
p
F
)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
5
10
15
20
25
V
GS
,
GA
T
E
T
O
SOURCE
V
O
L
T
A
GE (
V
)
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 35A
I
D
= 1A
WAVEFORMS IN
DESCENDING ORDER:
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