January 2003
200
3 Fairchild Semiconductor Corporation FDV305N Rev D (W)
FDV305N
20V N-Channel PowerTrench
MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild's high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
Load
switch
Battery
protection
Power
management
Features
0.9 A, 20 V
R
DS(ON)
= 220 m
@ V
GS
= 4.5 V
R
DS(ON)
= 300 m
@ V
GS
= 2.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
G
D
S
SOT-23
D
S
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source
Voltage
12
V
I
D
Drain Current Continuous
0.9
A
Pulsed
2
P
D
Maximum Power Dissipation
0.35
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
357
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
305
FDV305N
7''
8mm
3000 units
FDV305N
FDV305N Rev D (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V,
I
D
= 250
A
20
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A,Referenced to 25C
15 mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V,
V
GS
= 0 V
1
A
I
GSSF
GateBody Leakage, Forward
V
GS
= 12 V,
V
DS
= 0 V
100
nA
I
GSSR
GateBody Leakage, Reverse
V
GS
= 12 V,
V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
A
0.6 1 1.5 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A,Referenced to 25C
3 mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 4.5 V,
I
D
= 0.9 A
V
GS
= 2.5 V,
I
D
= 0.7 A
V
GS
= 4.5V, I
D
= 0.9 A, T
J
= 125
C
164
235
220
220
300
303
m
I
D(on)
OnState Drain Current
V
GS
= 4.5V,
V
DS
= 5 V
1
A
g
FS
Forward
Transconductance V
DS
= 5V,
I
D
= 0.9 A
3
S
Dynamic Characteristics
C
iss
Input
Capacitance
109
pF
C
oss
Output
Capacitance
30
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V,
V
GS
= 0 V,
f = 1.0 MHz
14 pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
4.5
9
ns
t
r
TurnOn Rise Time
7
14
ns
t
d(off)
TurnOff Delay Time
8
16
ns
t
f
TurnOff
Fall
Time
V
DD
= 10 V,
I
D
= 1 A,
V
GS
= 4.5 V,
R
GEN
= 6
1.4
2.8 ns
Q
g
Total Gate Charge
1.1
1.5
nC
Q
gs
GateSource
Charge
0.26
nC
Q
gd
GateDrain
Charge
V
DS
= 10 V,
I
D
= 0.9 A,
V
GS
= 4.5 V
0.26 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
0.29
A
V
SD
DrainSource
Diode
Forward
Voltage
V
GS
= 0 V,
I
S
= 0.29 A
0.75
1.2
V
t
rr
Diode Reverse Recovery Time
7.4
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 0.9 A,
d
iF
/d
t
= 100 A/s
2.2 nC
Notes:
1. Pulse Test: Pulse Width
300 s, Duty Cycle 2.0%
FDV305N
FDV305N Rev D (W)
Typical Characteristics
0
0.5
1
1.5
2
0
0.5
1
1.5
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT
(A)
V
GS
= 4.5V
2.0V
3.0V
2.5V
0.8
1
1.2
1.4
1.6
1.8
0
0.5
1
1.5
2
I
D
, DRAIN CURRENT (A)
R
DS(
O
N)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.5V
4.5V
3.0V
4.0V
3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(O
N)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 0.9A
V
GS
= 4.5V
0.1
0.2
0.3
0.4
0.5
0.6
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(O
N)
, ON-RESISTANCE (OHM)
I
D
= 0.5A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.5
1
1.5
2
2.5
0.5
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
,
REVERSE DRAI
N CURRENT (
A
)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDV305N
FDV305N Rev D (W)
Typical Characteristics
0
1
2
3
4
5
0
0.5
1
1.5
Q
g
, GATE CHARGE (nC)
V
GS
,
GATE-
S
OURCE VOLTAGE (
V
)
I
D
= 0.9A
V
DS
= 5V
10V
15V
0
30
60
90
120
150
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACI
TANCE (pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
JA
= 357
o
C/W
T
A
= 25
o
C
10ms
1ms
0
1
2
3
4
5
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
JA
= 357C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERM
A
L RESISTANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 357
o
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
FDV305N
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
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