December 2001
2001 Fairchild Semiconductor Corporation
FDW2508P Rev. E (W)
FDW2508P
Dual P-Channel 1.8 V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild's advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Power management
Load switch
Battery protection
Features
6 A, 12 V. R
DS(ON)
= 18 m
@ V
GS
= 4.5 V
R
DS(ON)
= 22 m
@ V
GS
= 2.5 V
R
DS(ON)
= 30 m
@ V
GS
= 1.8 V
Low gate charge(26nC typical)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
12
V
V
GSS
Gate-Source
Voltage
8
V
I
D
Drain Current Continuous
(Note 1)
6 A
Pulsed
30
P
D
Power Dissipation for Single Operation
(Note 1a)
1.3 W
(Note
1b)
1
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
100
C/W
(Note
1b)
125
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2508P FDW2508P
13''
12mm
2500
units
FDW2508P
FDW2508P Rev. E (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V,
I
D
= 250
A
12 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
2 mV/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 10 V, V
GS
= 0 V
1
A
I
GSSF
GateBody
Leakage,
Forward V
GS
= 8 V,
V
DS
= 0 V
100
nA
I
GSSR
GateBody
Leakage,
Reverse V
GS
= 8 V,
V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
A
0.4 0.5 1.5 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25C
2.7 mV/C
R
DS(on)
Static
DrainSource
OnResistance
V
GS
= 4.5 V, I
D
= 6 A
V
GS
= 2.5 V, I
D
= 5 A
V
GS
= 1.8 V, I
D
= 4 A
V
GS
= 4.5 V, I
D
= 6A, T
J
=125
C
14
17
22
18
18
22
30
25
m
I
D(on)
OnState Drain Current
V
GS
= 4.5 V, V
DS
= 5 V
30
A
g
FS
Forward
Transconductance V
DS
= 5 V,
I
D
= 6 A
32
S
Dynamic Characteristics
C
iss
Input
Capacitance
2644
pF
C
oss
Output
Capacitance
987
pF
C
rss
Reverse
Transfer
Capacitance
V
DS
= 6 V,
V
GS
= 0 V,
f = 1.0 MHz
602 pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
14
25
ns
t
r
TurnOn Rise Time
9.1
18
ns
t
d(off)
TurnOff
Delay
Time
122
195
ns
t
f
TurnOff Fall Time
V
DD
= 6 V,
I
D
= 1 A,
V
GS
= 4.5 V,
R
GEN
= 6
89
142 ns
Q
g
Total
Gate
Charge
26
36
nC
Q
gs
GateSource
Charge
4 nC
Q
gd
GateDrain
Charge
V
DS
= 6 V,
I
D
= 6 A,
V
GS
= 4.5 V
7 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
1.1
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.1 A
(Note 2)
0.59
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) R
JA
is 100
C/W (steady state) when mounted on a 1 inch copper pad on FR-4.
b) R
JA
is 125
C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDW2508P
FDW2508P Rev. E (W)
Typical Characteristics
0
15
30
45
60
0
1
2
3
4
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
,
DRAI
N CURRE
NT (
A
)
V
GS
= -4.5V
-3.0V
-2.5V
-1.8V
-2.0V
-1.5V
0.8
1
1.2
1.4
1.6
1.8
2
0
15
30
45
60
-I
D
, DIRAIN CURRENT (A)
R
DS
(
O
N)
,
NO
RM
ALI
Z
E
D
DRAI
N-S
O
URCE
O
N
-RE
S
I
S
T
ANCE
V
GS
= -1.8V
-3.0V
-2.0V
-4.5V
-2.5V
-3.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANCE
I
D
= -6A
V
GS
= -4.5V
0.005
0.015
0.025
0.035
0.045
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, O
N
-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
= -3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
0.6
1
1.4
1.8
2.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
,
R
EVER
SE
DRAIN CURRE
NT (
A
)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2508P
FDW2508P Rev. E (W)
Typical Characteristics
0
1
2
3
4
5
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
-V
GS
,
G
A
TE
-S
O
URCE
V
O
LTAG
E
(V
)
I
D
= -6A
V
DS
= -4V
-6V
-8V
0
1000
2000
3000
4000
0
3
6
9
12
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACI
TANCE
(pF
)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
DC
1s
100m
100
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
JA
= 125
o
C/W
T
A
= 25
o
C
10ms
1ms
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
)
,
P
E
AK TRANS
IE
NT P
O
WE
R (
W
)
SINGLE PULSE
R
JA
= 125C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL
RESISTANCE
R
JA
(t) = r(t) * R
JA
R
JA
= 125
o
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW2508P
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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