February 2003
2003 Fairchild Semiconductor Corporation
FDW2515NZ Rev C
FDW2515NZ
Common Drain N-Channel 2.5V specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor's advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V 12V).
Applications
Li-Ion Battery Pack
Features
5.8 A, 20 V
R
DS(ON)
= 28 m
@ V
GS
= 4.5 V
R
DS(ON)
= 38 m
@ V
GS
= 2.5 V
Extended V
GSS
range (
12V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
@ V
GS
= 2.5 V
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source
Voltage
12
V
I
D
Drain Current Continuous
(Note 1a)
5.8 A
Pulsed
20
Power Dissipation for Single Operation
(Note 1a)
1.6
P
D
(Note 1b)
1.1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
114
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2515NZ
FDW2515NZ
13''
12mm
3000 units
FD
W2515
N
Z
FDW2515NZ Rev C
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V,
I
D
= 250
A
20 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
10 mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V,
V
GS
= 0 V
1
A
I
GSS
GateBody
Leakage
V
GS
=
12 V, V
DS
= 0 V
10
A
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
A
0.6 1.0 1.5 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
0.3 mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 4.5 V,
I
D
= 5.8 A
V
GS
= 2.5 V,
I
D
= 5.0 A
V
GS
= 4.5 V, I
D
= 5.8 A, T
J
=125
C
22
29
29
28
38
40
m
I
D(on)
OnState Drain Current
V
GS
= 4.5 V,
V
DS
= 5 V
10
A
g
FS
Forward
Transconductance V
DS
= 5 V,
I
D
= 5.8 A
25
S
Dynamic Characteristics
C
iss
Input
Capacitance
745
pF
C
oss
Output
Capacitance
205
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V,
V
GS
= 0 V,
f = 1.0 MHz
115 pF
R
G
Gate
Resistance
V
GS
= 15 mV, f = 1.0 MHz
1.6
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
9
17
Ns
t
r
TurnOn
Rise
Time
6 11 Ns
t
d(off)
TurnOff
Delay
Time
15
28
Ns
t
f
TurnOff Fall Time
V
DD
= 10 V,
I
D
= 1 A,
V
GS
= 4.5 V,
R
GEN
= 6
8 16 Ns
Q
g
Total Gate Charge
9
12
nC
Q
gs
GateSource
Charge
1.5
nC
Q
gd
GateDrain
Charge
V
DS
= 10 V,
I
D
= 5.8 A,
V
GS
= 5 V
2.4 nC
FD
W2515
N
Z
FDW2515NZ Rev C
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
1.3
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.3 A
(Note 2)
0.7
1.2 V
t
rr
Diode Reverse Recovery Time
17
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 5.8 A
d
iF
/d
t
= 100 A/s
(Note 2)
5 nC
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 77C/W
when
mounted on a 1in
2
pad
of 2 oz copper
b)
114C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FD
W2515
N
Z
FDW2515NZ Rev C
Typical Characteristics
0
4
8
12
16
20
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
D
RAIN CURRE
NT (
A
)
4.5V
2.5V
2.0V
V
GS
= 10.0V
1.5V
3.0V
0.8
1.2
1.6
2
2.4
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NO
RMALI
Z
E
D
D
RAIN-
S
O
URCE
O
N
-
R
E
S
IS
TANC
E
V
GS
= 2.0V
3.5V
3.0V
4.5V
2.5V
10.0V
6.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(O
N)
,
NO
R
M
ALI
Z
E
D
DRAI
N-
S
O
U
RCE
O
N
-RE
S
I
S
T
ANCE
I
D
= 5.8A
V
GS
= 4.5V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
,
O
N
-
R
E
S
I
S
TANCE
(
O
HM)
I
D
= 2.9A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
20
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
DRAI
N
C
URRE
NT (
A
)
T
A
= 125
o
C
25
o
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
R
EVER
SE D
R
A
I
N
C
U
R
R
E
N
T
(A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FD
W2515
N
Z
FDW2515NZ Rev C
Typical Characteristics
0
2
4
6
8
10
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
V
GS
,
G
A
TE
-S
O
URCE
V
O
LTAG
E
(V
)
I
D
= 5.8A
V
DS
= 5V
15V
10V
0
300
600
900
1200
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACI
TAN
C
E
(
pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DRA
I
N
CURRE
NT
(
A
)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
JA
= 114
o
C/W
T
A
= 25
o
C
10ms
1ms
100us
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
)
,
P
E
AK TRANS
IE
NT P
O
WE
R
(
W
)
SINGLE PULSE
R
JA
= 114C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t
)
,
NO
R
M
AL
I
Z
E
D
E
F
F
E
CT
I
V
E
T
R
A
N
S
I
E
NT
T
H
E
R
M
A
L
RE
S
I
S
T
AN
CE
R
JA
(t) = r(t) * R
JA
R
JA
=114 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FD
W2515
N
Z
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
MSXPro
OCX
OCXPro
OPTOLOGIC
OPTOPLANAR
FACT
FACT Quiet Series
FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I
2
C
Rev. I2
ACEx
ActiveArray
Bottomless
CoolFET
CROSSVOLT
DOME
EcoSPARK
E
2
CMOS
TM
EnSigna
TM
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SILENT SWITCHER
SMART START
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
VCX
Across the board. Around the world.
The Power Franchise
Programmable Active Droop
PDF 
ZIP