November 2000
2000 Fairchild Semiconductor Corporation
FDW2520C Rev C(W)
FDW2520C
Complementary PowerTrench
MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild's advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC conversion
Power management
Load switch
Features
Q1: N-Channel
6 A, 20 V. R
DS(ON)
= 18 m
@ V
GS
= 4.5 V
R
DS(ON)
= 28 m
@ V
GS
= 2.5 V
Q2: P-Channel
4.4A, 20 V. R
DS(ON)
= 35 m
@ V
GS
= 4.5 V
R
DS(ON)
= 57 m
@ V
GS
= 2.5 V
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Q1
Q2
Absolute Maximum Ratings
T
A
= 25C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
V
DSS
Drain-Source Voltage
20
20
V
V
GSS
Gate-Source Voltage
12
12
V
I
D
Drain Current - Continuous
(Note 1a)
6
4.4
A
- Pulsed
30
30
P
D
Power Dissipation
(Note 1a)
1.0
W
(Note 1b)
0.6
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
125
C/W
(Note 1b)
208
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2520C
FDW2520C
13''
12mm
3000 units
FDW2520
C
FDW2520C Rev C(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 A
V
GS
= 0 V, I
D
= 250 A
Q1
Q2
20
20
V
BV
DSS
===
T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 250 A, Referenced to 25
C
I
D
= 250 A, Referenced to 25
C
Q1
Q2
14
17
mV/
C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V
Q1
Q2
1
1
A
I
GSS
Gate-Body Leakage
V
GS
= +12 V, V
DS
= 0 V
V
GS
= +12 V, V
DS
= 0 V
Q1
Q2
+100
+100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
V
DS
= V
GS
, I
D
= 250 A
Q1
Q2
0.4
0.4
1.0
1.0
1.5
1.5
V
V
GS(th)
===
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 A, Referenced to 25
C
I
D
= 250 A, Referenced to 25
C
Q1
Q2
3.3
3.1
mV/
C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 4.5 V, I
D
= 6 A
V
GS
= 2.5 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 6 A, T
J
= 125
C
Q1
14
19
19
18
28
29
m
V
GS
= 4.5 V, I
D
= 4.4 A
V
GS
= 2.5 V, I
D
= 3.3 A
V
GS
= 4.5 V, I
D
= 4.4 A, T
J
= 125
C
Q2
28
43
39
35
57
56
m
I
D(on)
On-State Drain Current
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= 4.5 V, V
DS
= 5 V
Q1
Q2
30
30
A
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 6 A
V
DS
= 5 V, I
D
= 4.4 A
Q1
Q2
30
17
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
1325
1330
pF
C
oss
Output Capacitance
Q1
Q2
358
552
pF
C
rss
Reverse Transfer
Capacitance
Q1:
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Q2:
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Q1
Q2
168
153
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
Q1
Q2
6
12
20
25
ns
t
r
Turn-On Rise Time
Q1
Q2
11
19
40
40
ns
t
d(off)
Turn-Off Delay Time
Q1
Q2
32
60
60
100
ns
t
f
Turn-Off Fall Time
Q1:
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5V, R
GEN
= 6
Q2:
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5V, R
GEN
= 6
Q1
Q2
19
37
34
70
ns
Q
g
Total Gate Charge
Q1
Q2
14
14
20
20
nC
Q
gs
Gate-Source Charge
Q1
Q2
2.6
3.0
nC
Q
gd
Gate-Drain Charge
Q1:
V
DS
= 10 V, I
D
= 6 A,
V
GS
= 4.5 V
Q2:
V
DS
= 5 V, I
D
= 4.4 A,
V
GS
= 4.5 V
Q1
Q2
3.7
3.9
nC
FDW2520
C
FDW2520C Rev C(W)
Electrical Characteristics
(continued)
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
0.83
0.83
A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 0.83 A
(Note 2)
V
GS
= 0 V, I
S
= 0.83 A
(Note 2)
Q1
Q2
0.5
0.7
1.2
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) R
JA
is 125
C/W (steady state) when mounted on a 1 inch copper pad on FR-4.
b) R
JA
is 208
C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDW2520
C
FDW2520C Rev C(W)
Typical Characteristics: Q1
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
3.0V
1.5V
2.5V
2.0V
V
GS
= 4.5V
0.8
1
1.2
1.4
1.6
1.8
2
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANCE
V
GS
= 2.0V
3.5V
3.0V
4.0V
4.5V
2.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANC
E
I
D
= 6A
V
GS
= 4.5V
0
0.01
0.02
0.03
0.04
0.05
0.06
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(
O
N)
, O
N
-
R
E
S
I
S
T
ANCE
(
O
HM)
I
D
= 3 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT (
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
R
EVER
SE
DRAIN CURRE
NT (
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2520
C
FDW2520C Rev C(W)
Typical Characteristics: Q1
0
1
2
3
4
5
0
2
4
6
8
10
12
14
16
Q
g
, GATE CHARGE (nC)
V
GS
, G
A
TE
-
S
O
URCE
V
O
LTAG
E
(
V
)
I
D
= 6A
V
DS
= 5V
15V
10V
0
250
500
750
1000
1250
1500
1750
2000
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACITANCE
(
pF)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE
NT
(
A
)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
JA
= 208
o
C/W
T
A
= 25
o
C
10ms
1ms
0
20
40
60
80
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
)
,
P
E
AK TRANS
IE
NT P
O
WE
R (
W
)
SINGLE PULSE
R
JA
= 208 C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
FDW2520
C
PDF 
ZIP