www.docs.chipfind.ru
June 2001
2001 Fairchild Semiconductor Corporation
FDW262P Rev C(W)
FDW262P
20V P-Channel PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
Applications
Power management
Load switch
Features
4.5 A, 20 V. R
DS(ON)
= 47 m
@ V
GS
= 4.5 V
R
DS(ON)
= 65 m
@ V
GS
= 2.5 V
R
DS(ON)
= 100 m
@ V
GS
= 1.8 V
R
DS(ON)
rated for use with 1.8 V logic
Low gate charge (13nC typical)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D
S
S
G
D
S
S
D
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol Parameter
Ratings
Units
V
DSS
DrainSource Voltage
20
V
V
GSS
Gate-Source
Voltage
8
V
I
D
Drain Current Continuous
(Note 1a)
4.5 A
Pulsed
40
P
D
Power Dissipation for Single Operation
(Note 1a)
1.3 W
(Note 1b)
0.6
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
87
C/W
(Note 1b)
133
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
262P FDW262P
13''
16mm
3000
units
FDW262P
FDW262P Rev C(W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol Parameter
Test
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
20 V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
14 mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
1
A
I
GSSF
GateBody
Leakage,
Forward V
GS
= 8 V,
V
DS
= 0 V
100
nA
I
GSSR
GateBody
Leakage,
Reverse V
GS
= 8 V
V
DS
= 0 V
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
0.4 0.8 1.5 V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A,
Referenced to 25
C
2.5 mV/
C
R
DS(on)
Static
DrainSource
OnResistance
V
GS
= 4.5 V, I
D
= 4.5 A
V
GS
= 2.5 V, I
D
= 3.7 A
V
GS
= 1.8 V, I
D
= 3 A
V
GS
=4.5 V, I
D
=4.5A, T
J
=125
C
37
50
77
48
47
65
100
65
m
I
D(on)
OnState
Drain
Current
V
GS
= 4.5 V,
V
DS
= 5 V
20
A
g
FS
Forward
Transconductance V
DS
= 5 V,
I
D
= 4.5 A
16
S
Dynamic Characteristics
C
iss
Input
Capacitance
1193 pF
C
oss
Output
Capacitance
193
pF
C
rss
Reverse
Transfer
Capacitance
V
DS
= 10 V,
V
GS
= 0 V,
f = 1.0 MHz
96 pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn
Delay
Time
11
20
ns
t
r
TurnOn Rise Time
9
18
ns
t
d(off)
TurnOff
Delay
Time
36
57
ns
t
f
TurnOff Fall Time
V
DD
= 10 V,
I
D
= 1 A,
V
GS
= 4.5 V,
R
GEN
= 6
19 34 ns
Q
g
Total
Gate
Charge
13
18
nC
Q
gs
GateSource
Charge
2.5
nC
Q
gd
GateDrain
Charge
V
DS
= 10 V,
I
D
= 4.5 A,
V
GS
= 4.5 V
3.6 nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
1.1
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.1 A
(Note 2)
0.7
1.2
V
Notes:
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a) 87C/W
when
mounted on a 1in
2
pad
of 2 oz copper.
b)
133C/W when mounted
on a minimum pad of 2 oz
copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
FDW262P
FDW262P Rev C(W)
Typical Characteristics
0
10
20
30
40
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
V
GS
= -4.5V
-2.5V
-2.0V
-1.8V
-3.0V
-3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
10
20
30
40
-I
D
, DRAIN CURRENT (A)
R
DS
(
O
N)
,
NO
RMALI
Z
E
D
DRAI
N-S
O
URCE
O
N
-RE
S
I
S
T
ANCE
V
GS
= - 2.0V
-4.5V
-3.0V
-3.5V
-2.5V
-4.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS
(
O
N)
, NO
RMALIZE
D
DRAIN-
S
O
URCE
O
N
-
R
E
S
I
S
T
ANCE
I
D
= -4.5A
V
GS
= - 4.5V
0.03
0.06
0.09
0.12
0.15
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS
(O
N)
, O
N
-
R
E
S
I
S
T
ANCE
(
O
HM
)
I
D
= -2.3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
0.5
1
1.5
2
2.5
3
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
,
R
EVER
SE
DRAIN CURRE
NT (
A
)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW262P
FDW262P Rev C(W)
Typical Characteristics
0
1
2
3
4
5
0
4
8
12
16
Q
g
, GATE CHARGE (nC)
-V
GS
,
G
A
TE
-S
O
URCE
V
O
LTAG
E
(V
)
I
D
= -4.5A
V
DS
= -5V
-10V
-15V
0
400
800
1200
1600
2000
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAP
ACI
TANCE
(pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRE
NT (
A
)
DC
10s
1s
100ms
100
s
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
JA
= 133
o
C/W
T
A
= 25
o
C
10ms
1ms
0
10
20
30
40
50
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
pk
)
,
P
E
AK TRANS
IE
NT P
O
WE
R (
W
)
SINGLE PULSE
R
JA
= 133C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r(t), N
O
R
M
A
L
IZ
E
D
E
F
F
E
C
T
IV
E
TRANSI
E
NT THERMAL RESI
STANCE
R
JA
(t) = r(t) + R
JA
R
JA
= 133
o
C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW262P
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
QFETTM
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
SILENT SWITCHER
SMART STARTTM
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MICROWIRETM
OPTOLOGICTM
Rev. H3
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DenseTrenchTM
DOMETM
EcoSPARKTM
E
2
CMOS
TM
EnSigna
TM
FACTTM
FACT Quiet SeriesTM
STAR*POWERTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogicTM
TruTranslationTM
UHCTM
UltraFET
VCXTM
STAR*POWER is used under license
PDF 
ZIP