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Электронный компонент: FDY3001NZ

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January 2006
2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDY3001NZ Rev A
FDY3001NZ
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This Dual N-Channel MOSFET has been designed
using Fairchild Semiconductor's advanced Power
Trench process to optimize the R
DS(ON)
@ V
GS
= 2.5v.
Applications
Li-Ion Battery Pack
Features
200 mA, 20 V R
DS(ON)
= 5
@ V
GS
= 4.5 V
R
DS(ON)
= 7
@ V
GS
= 2.5 V
ESD protection diode (note 3)
RoHS Compliant
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source Voltage
12
V
I
D
Drain Current Continuous
(Note 1a) 1a)
200
mA
Pulsed
1000
P
D
Power Dissipation (Steady State)
(Note 1a) 1a)
625
mW
(Note 1b) 1
446
T
J
, T
STG
Operating and Storage Junction Temperature
Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 1a)
200
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b) 1
280
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
D
FDY3001NZ
7 ''
8 mm
3000 units
F
D
Y
3
0
0
1
N
Z

D
u
a
l

N
-
C
h
a
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2
.
5
V

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M
O
S
F
E
T
1
3
5
2
4
6
S
1
D
1
G
2
S
2
D
2
G
1
4
6
5
3
1
2
FDY3001NZ Rev A www.fairchildsemi.com
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
DrainSource Breakdown
Voltage
V
GS
= 0 V,
I
D
= 250
A
20
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
14
mV/
C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 16 V,
V
GS
= 0 V
1
A
V
GS
=
12 V, V
DS
= 0 V
10
A
I
GSS
GateBody Leakage,
V
GS
=
4.5 V, V
DS
= 0 V
1
A
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
I
D
= 250
A
0.6
1.0
1.5
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
3
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 4.5 V,
I
D
= 200 mA
V
GS
= 2.5 V,
I
D
= 175 mA
V
GS
= 1.8 V,
I
D
= 150 mA
V
GS
= 1.5 V
I
D
= 20 mA
V
GS
= 4.5 V, I
D
=200mA, T
J
= 125
C
5
7
9
10
7
g
FS
Forward Transconductance
V
DS
= 5 V,
I
D
= 200 mA
1.8
S
Dynamic Characteristics
C
iss
Input Capacitance
60
pF
C
oss
Output Capacitance
20
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V,
V
GS
= 0 V,
f = 1.0 MHz
10
pF
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
6
12
ns
t
r
TurnOn Rise Time
8
16
ns
t
d(off)
TurnOff Delay Time
8
16
ns
t
f
TurnOff Fall Time
V
DD
= 10 V,
I
D
= 1 A,
V
GS
= 4.5 V,
R
GEN
= 6
2.4
4.8
ns
Q
g
Total Gate Charge
0.8
1.1
nC
Q
gs
GateSource Charge
0.16
nC
Q
gd
GateDrain Charge
V
DS
= 10 V,
I
D
= 200 mA,
V
GS
= 4.5 V
0.26
nC
DrainSource Diode Characteristics and Maximum Ratings
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 150 mA
(Note 2)
0.7
1.2
V
t
rr
Diode Reverse Recovery Time
8
nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 200 mA,
dI
F
/dt = 100 A/s
1
nC
Notes:
1
. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
JC
is guaranteed by design while R
CA
is determined by the user's board design.
a)
200C/W when
mounted on a 1in2
pad of 2 oz copper
b) 280C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size
paper
2. Pulse Test: Pulse
Width < 300
s, Duty Cycle < 2.0%
3. The diode connected
between the gate and source serves
only as protection againts ESD. No
gate overvoltage rating is implied.
F
D
Y
3
0
0
1
N
Z

D
u
a
l

N
-
C
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2
.
5
V

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O
S
F
E
T
FDY3001NZ Rev A www.fairchildsemi.com
Typical Characteristics
0
0.2
0.4
0.6
0.8
1
0
0.25
0.5
0.75
1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
2.5V
2.0V
V
GS
= 4.5V
3.0V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
0.2
0.4
0.6
0.8
1
I
D
, DRAIN CURRENT (A)
R
D
S
(
O
N
)
,

N
O
R
M
A
L
I
Z
E
D
D
R
A
I
N
-
S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E
V
GS
= 2.0V
2.5V
3.5V
4.5V
3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
S
(
O
N
)
,

N
O
R
M
A
L
I
Z
E
D

D
R
A
I
N
-
S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E
I
D
= 200mA
V
GS
= 4.5V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
S
(
O
N
)
,

O
N
-
R
E
S
I
S
T
A
N
C
E

(
O
H
M
)
I
D
= 100mA
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.2
0.4
0.6
0.8
1
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,

R
E
V
E
R
S
E

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
D
Y
3
0
0
1
N
Z

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O
S
F
E
T
FDY3001NZ Rev A www.fairchildsemi.com
Typical Characteristics
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
Q
g
, GATE CHARGE (nC)
V
G
S
,

G
A
T
E
-
S
O
U
R
C
E

V
O
L
T
A
G
E

(
V
)
I
D
= 200mA
V
DS
= 5V
15V
10V
0
10
20
30
40
50
60
70
80
90
100
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
A
P
A
C
I
T
A
N
C
E

(
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
JA
= 280
o
C/W
T
A
= 25
o
C
10ms
1ms
0
5
10
15
20
25
30
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
p
k
)
,

P
E
A
K

T
R
A
N
S
I
E
N
T

P
O
W
E
R

(
W
)
SINGLE PULSE
R
JA
= 280C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t
)
,

N
O
R
M
A
L
I
Z
E
D

E
F
F
E
C
T
I
V
E

T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L

R
E
S
I
S
T
A
N
C
E
R
JA
(t) = r(t) * R
JA
R
JA
=280 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
D
Y
3
0
0
1
N
Z

D
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2
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M
O
S
F
E
T
FDY3001NZ Rev A www.fairchildsemi.com
Dimensional Outline and Pad Layout
0.55
1.20 BSC
0.20 BSC
0.35 BSC
0.18
0.10
DETAIL A
SCALE 2 : 1
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
1.70
1.50
1.70
1.55
0.50
1.00
0.30
0.15
0.60
0.56
(0.20)
1
3
6
4
SEE DETAIL A
LAND PATTERN RECOMMENDATION
1.80
0.30
1.25
0.50
0.50
F
D
Y
3
0
0
1
N
Z

D
u
a
l

N
-
C
h
a
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2
.
5
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M
O
S
F
E
T
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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