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Электронный компонент: FDZ2554PZ

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August 2004
2004 Fairchild Semiconductor Corporation
FDZ2554PZ Rev. C3 (W)
FDZ2554PZ
Monolithic Common Drain P-Channel 2.5V Specified PowerTrench
BGA MOSFET
General Description
Combining Fairchild's advanced 2.5V specified
PowerTrench process with state-of-the-art BGA
packaging, the FDZ2554PZ minimizes both PCB space
and R
DS(ON)
. This monolithic common drain BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low R
DS(ON)
.
Applications
Battery management
Load switch
Battery protection
Features
6.5 A, 20 V. R
DS(ON)
= 28 m
@ V
GS
= 4.5 V
R
DS(ON)
= 45 m
@ V
GS
= 2.5 V
>4800V ESD Protection
Occupies only 0.10 cm
2
of PCB area:
1/3 the area of SO-8
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
Outstanding thermal transfer characteristics:
significantly better than SO-8
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
High power and current handling capability
Q2
Q1
Pin 1
G
S
D
D
S
S
S
D
S
S
S
S
G
S
S
D
D
D
Bottom
Pin 1
F
2
5
5
4
Top
S
S
G
G
D
Q1
Q2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
20
V
V
GSS
Gate-Source Voltage
12
V
I
D
Drain Current Continuous
(Note 1a)
6.5
A
Pulsed
20
P
D
Power Dissipation (Steady State)
(Note 1a)
2.1
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
55 to +150
C
Thermal Characteristics
R
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
60
C/W
R
JB
Thermal Resistance, Junction-to-Ball
(Note 1b)
6.3
R
JC
Thermal Resistance, Junction-to-Case
(Note 1)
0.6
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2554Z
FDZ2554PZ
7''
12mm
3000 units
F
D
Z
2
5
5
4
P
Z
FDZ2554P Rev C3 (W)
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
DrainSource Breakdown Voltage V
GS
= 0 V, I
D
= 250
A
20
V
BV
DSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25
C
13
mV/
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 16 V, V
GS
= 0 V
1
A
I
GSS
GateBody Leakage
V
GS
=
12 V, V
DS
= 0 V
10
A
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
0.6 0.8
1.5
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25
C
3
mV/
C
R
DS(on)
Static DrainSource
OnResistance
V
GS
= 4.5 V, I
D
= 6.5 A
V
GS
= 2.5 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 6.5 A, T
J
=125
C
21
36
30
28
45
43
m
g
FS
Forward Transconductance
V
DS
= 5 V,
I
D
= 6.5 A
24
S
Dynamic Characteristics
C
iss
Input Capacitance
1430
pF
C
oss
Output Capacitance
320
pF
C
rss
Reverse Transfer Capacitance
V
DS
= 10 V,
V
GS
= 0 V,
f = 1.0 MHz
170
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
9.2
Switching Characteristics
(Note 2)
t
d(on)
TurnOn Delay Time
15
26
ns
t
r
TurnOn Rise Time
9
18
ns
t
d(off)
TurnOff Delay Time
60
100
ns
t
f
TurnOff Fall Time
V
DD
= 10 V,
I
D
= 1 A,
V
GS
= 4.5 V,
R
GEN
= 6
37
60
ns
Q
g
Total Gate Charge
15
21
nC
Q
gs
GateSource Charge
3
nC
Q
gd
GateDrain Charge
V
DS
= 10 V,
I
D
= 6.5 A,
V
GS
= 4.5 V
4
nC
DrainSource Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous DrainSource Diode Forward Current
1.75
A
V
SD
DrainSource Diode Forward
Voltage
V
GS
= 0 V, I
S
= 1.75 A
(Note 2)
0.7
1.2
V
t
rr
Reverse Recovery Time
25
ns
Q
rr
Reverse Recovery Charge
I
F
= 6.5 A,
d
iF
/d
t
= 100 A/s
10
nC
Notes:
1.
R
JA
is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the
junction to the circuit board side of the solder ball, R
JB
, is defined for reference. For R
JC
, the thermal reference point for the case is defined as the
top surface of the copper chip carrier. R
JC
and R
JB
are guaranteed by design while R
JA
is determined by the user's board design.
a)
60C/W when mounted
on a 1in
2
pad of 2 oz
copper
b)
108C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
F
D
Z
2
5
5
4
P
Z
FDZ2554P Rev C3 (W)
Dimensional Outline and Pad Layout
F
D
Z
2
5
5
4
P
Z
F
D
Z
2
5
5
4
P
Z
FDZ2554P Rev C3 (W)
Typical Characteristics
0
5
10
15
20
0
0.5
1
1.5
2
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
-3.0V
-3.5V
-2.5V
-2.0V
V
GS
= - 4.5V
0.8
1
1.2
1.4
1.6
1.8
0
5
10
15
20
-I
D
, DRAIN CURRENT (A)
R
D
S
(
O
N
)
,

N
O
R
M
A
L
I
Z
E
D
D
R
A
I
N
-
S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E
V
GS
= -2.5V
-4.0V
-3.5V
-4.5V
-3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
S
(
O
N
)
,

N
O
R
M
A
L
I
Z
E
D

D
R
A
I
N
-
S
O
U
R
C
E

O
N
-
R
E
S
I
S
T
A
N
C
E
I
D
= -6.5A
V
GS
= -4.5V
0.01
0.03
0.05
0.07
0.09
1.5
2
2.5
3
3.5
4
4.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
S
(
O
N
)
,

O
N
-
R
E
S
I
S
T
A
N
C
E

(
O
H
M
)
I
D
= -3.2A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
I
S
,

R
E
V
E
R
S
E

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
D
Z
2
5
5
4
P
Z
FDZ2554P Rev C3 (W)
Typical Characteristics
0
1
2
3
4
5
0
4
8
12
16
Q
g
, GATE CHARGE (nC)
-
V
G
S
,

G
A
T
E
-
S
O
U
R
C
E

V
O
L
T
A
G
E

(
V
)
I
D
= -6.5A
V
DS
= -5V
-15V
-10V
0
400
800
1200
1600
2000
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
A
P
A
C
I
T
A
N
C
E

(
p
F
)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
I
D
,

D
R
A
I
N

C
U
R
R
E
N
T

(
A
)
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= -4.5V
SINGLE PULSE
R
JA
= 108
o
C/W
T
A
= 25
o
C
10ms
1ms
10s
0
10
20
30
40
50
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
(
p
k
)
,

P
E
A
K

T
R
A
N
S
I
E
N
T

P
O
W
E
R

(
W
)
SINGLE PULSE
R
JA
= 108C/W
T
A
= 25C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
(
t
)
,

N
O
R
M
A
L
I
Z
E
D

E
F
F
E
C
T
I
V
E

T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L

R
E
S
I
S
T
A
N
C
E
R
JA
(t) = r(t) * R
JA
R
JA
= 108 C/W
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
D
Z
2
5
5
4
P
Z
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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