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Электронный компонент: FFA20U60DN

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2002 Fairchild Semiconductor Corporation
FFA20U60DN
Rev. A, March 2002
ULTRA FAST RECOVERY POWER RECTIFIER
Absolute Maximum Ratings
(per diode) T
C
=25



C unless otherwise noted
Thermal Characteristics
Electrical Characteristics
(per diode) T
C
=25



C unless otherwise noted
* Pulse Test: Pulse Width=300
s, Duty Cycle
=
2%
Symbol
Parameter
Value
Units
V
RRM
Peak Repetitive Reverse Voltage
600
V
I
F(AV)
Average Rectified Forward Current @ T
C
= 100
C
20
A
I
FSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
120
A
T
J,
T
STG
Operating Junction and Storage Temperature
- 65 to +150
C
Symbol
Parameter
Value
Units
R
JC
Maximum Thermal Resistance, Junction to Case
1.25
C/W
Symbol
Parameter
Min.
Typ.
Max
Units
V
FM
*
Maximum Instantaneous Forward Voltage
I
F
= 20A
I
F
= 20A
T
C
= 25
C
T
C
= 100
C
-
-
-
-
2.2
2.0
V
I
RM
*
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25
C
T
C
= 100
C
-
-
-
-
10
100
A
t
rr
I
rr
Q
rr
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
F
=20A, di/dt = 200A/
s)
-
-
-
-
-
-
90
8
360
ns
A
nC
W
AVL
Avalanche Energy
1.0
-
-
mJ
FFA20U60DN
Features
High voltage and high reliability
High speed switching
Low forward voltage
Applications
General purpose
Switching mode power supply
Free-wheeling diode for motor application
Power switching circuits
TO-3P
1 2 3
1. Anode 2.Cathode 3. Anode
2002 Fairchild Semiconductor Corporation
Rev. A, March 2002
FFA20U60DN
Typical Characteristics
Typical Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 3. Typical Junction Capacitance
Figure 5. Typical Reverse Recovery Current
vs. di/dt
Figure 2. Typical Reverse Current
vs. Reverse Voltage
Figure 4. Typical Reverse Recovery Time
vs. di/dt
Figure 6. Forward Current Derating Curve
0.1
1
10
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
C
= 25
o
C
T
C
= 100
o
C
Forward Voltage , V
F
[V]
F
o
r
w
ar
d C
u
r
r
ent ,
I
F
[A
]
0.1
1
10
100
1
50
100
150
200
Typical Capacitance
at 0V = 178 pF
Capac
i
t
anc
e ,

Cj
[
p
F
]
Reverse Voltage , V
R
[V]
100
500
0
2
4
6
8
10
12
14
16
I
F
= 20A
T
C
= 25
o
C
R
e
v
e
rs
e R
e
c
o
v
e
ry
C
u
rrent
, I
rr
[A
]
di/dt [A/
s]
100
200
300
400
500
600
1E-3
0.01
0.1
1
10
100
1000
T
C
= 100
o
C
T
C
= 25
o
C
R
e
v
e
r
s
e
C
u
r
r
e
n
t , I
R
[
A]
Reverse Voltage , V
R
[V]
100
500
40
50
60
70
80
90
100
I
F
= 20A
T
C
= 25
o
C
R
e
ve
rse

R
e
co
v
e
ry Ti
m
e
,
t
rr
[n
s
]
di/dt [A/
s]
60
80
100
120
140
160
0
5
10
15
20
25
30
DC
A
v
er
age F
o
r
w
ar
d Cur
r
ent
,

I
F(
AV)
[A
]
Case Temperature , T
C
[
o
C]
2002 Fairchild Semiconductor Corporation
Rev. A, March 2002
FFA20U60DN
Package Dimensions
15.60
0.20
4.80
0.20
13.60
0.20
9.60
0.20
2.00
0.20
3.00
0.20
1.00
0.20
1.40
0.20
3.20
0.10
3.80
0.20
13.90
0.20
3.50
0.20
16.50
0.30
12.76
0.20
19.90
0.20
23.40
0.20
18.70
0.20
1.50
+0.15
0.05
0.60
+0.15
0.05
5.45TYP
[5.45
0.30
]
5.45TYP
[5.45
0.30
]
TO-3P
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation
Rev. H5
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER is used under license
ACExTM
BottomlessTM
CoolFETTM
CROSSVOLTTM
DenseTrenchTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
ISOPLANARTM
LittleFETTM
MicroFETTM
MicroPakTM
MICROWIRETM
OPTOLOGICTM
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerTrench
QFETTM
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
SLIENT SWITCHER
SMART STARTTM
SMPTM
STAR*POWERTM
StealthTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogicTM
TruTranslationTM
UHCTM
UltraFET
VCXTM