FFB2222A / FMB2222A / MMPQ2222A
NPN Multi-Chip General Purpose Amplifier
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
75
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
500
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Discrete POWER & Signal
Technologies
1998 Fairchild Semiconductor Corporation
Thermal Characteristics
T
A
= 25C unless otherwise noted
Symbol
Characteristic
Max
Units
FFB2222A
FMB2222A
MMPQ2222A
P
D
Total Device Dissipation
Derate above 25
C
300
2.4
700
5.6
1,000
8.0
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
415
180
125
240
C/W
C/W
C/W
FFB2222A
SC70-6
Mark: .1P
C1
B2
E2
E1
B1
C2
pin #1
FMB2222A
SuperSOT
TM
-6
Mark: .1P
C1
E1
C2
B1
E2
B2
pin #1
This device is for use as a medium power amplifier and switch requiring collector
currents up to 500 mA. Sourced from Process 19.
MMPQ2222A
SOIC-16
C1
C1
C2
C2
C3
C3
C4
C4
E1
B1
E2
B2
E3
B3
E4
B4
FFB2222A / FMB2222A / MMPQ2222A
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 20 V,
f = 100 MHz
300
MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 100 kHz
4.0
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, f = 100 kHz
20
pF
NF
Noise Figure
I
C
= 100
A, V
CE
= 10 V,
R
S
= 1.0 k
, f = 1.0 kHz
2.0
dB
SWITCHING CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
I
C
= 10 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
75
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
6.0
V
I
CEX
Collector Cutoff Current
V
CE
= 60 V, V
EB(OFF)
= 3.0 V
10
nA
I
CBO
Collector Cutoff Current
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 125
C
0.01
10
A
A
I
EBO
Emitter Cutoff Current
V
EB
= 3.0 V, I
C
= 0
10
nA
I
BL
Base Cutoff Current
V
CE
= 60 V, V
EB(OFF)
= 3.0 V
20
nA
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 10 mA,V
CE
= 10 V,T
A
= -55
C
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 150 mA, V
CE
= 1.0 V*
I
C
= 500 mA, V
CE
= 10 V*
35
50
75
35
100
50
40
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.3
1.0
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage*
I
C
= 150 mA, I
B
= 1.0 mA
I
C
= 500 mA, I
B
= 50 mA
0.6
1.2
2.0
V
V
t
d
Delay Time
V
CC
= 30 V, V
BE(OFF)
= 0.5 V,
8
ns
t
r
Rise Time
I
C
= 150 mA, I
B1
= 15 mA
20
ns
t
s
Storage Time
V
CC
= 30 V, I
C
= 150 mA,
180
ns
t
f
Fall Time
I
B1
= I
B2
= 15 mA
40
ns
NPN Multi-Chip General Purpose Amplifier
(continued)
FFB2222A / FMB2222A / MMPQ2222A
Typical Characteristics
NPN Multi-Chip General Purpose Amplifier
(continued)
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
BA
SE-
EMI
TTER
ON VOL
T
A
GE (
V
)
BE
(
O
N)
C
V = 5V
CE
25 C
125 C
- 40 C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
- BA
SE-EM
I
TTER
VO
L
T
A
G
E
(V)
BE
SA
T
C
= 10
25 C
125 C
- 40 C
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V
-
COLL
ECT
O
R
-
EMI
T
TER VOL
T
A
G
E
(
V
)
CES
A
T
25 C
C
= 10
125 C
- 40 C
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h
-
TYPI
C
A
L P
U
LS
ED CU
RRENT
GA
I
N
C
FE
125 C
25 C
- 40 C
V = 5V
CE
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I
- COLL
ECT
O
R
CURRE
NT (nA
)
A
V
= 40V
CB
CB
O
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
0.1
1
10
100
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CA
P
A
C
I
T
A
NC
E (
p
F
)
f = 1 MHz
C ob
C te
FFB2222A / FMB2222A / MMPQ2222A
Typical Characteristics
(continued)
Turn On and Turn Off Times
vs Collector Current
10
100
1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TI
M
E
(
n
S)
I = I =
t on
t
off
B1
C
B2
I
c
10
V = 25 V
cc
Switching Times
vs Collector Current
10
100
1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TI
ME
(
n
S
)
I = I =
t r
t
s
B1
C
B2
I
c
10
V = 25 V
cc
t f
t d
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
WER DISSIP
A
T
I
O
N
(
W
)
D
o
SOT-6
NPN Multi-Chip General Purpose Amplifier
(continued)
FFB2222A / FMB2222A / MMPQ2222A
Test Circuits
30 V
1.0 K
16 V
0
200ns
200ns
500
200
50
37
- 15 V
1.0 K
6.0 V
0
30 V
FIGURE 2: Saturated Turn-Off Switching Time
FIGURE 1: Saturated Turn-On Switching Time
1k
NPN Multi-Chip General Purpose Amplifier
(continued)
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