4
C1
B2
E2
E1
B1
C2
pin #1
NPN & PNP General Purpose Amplifier
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
30
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
500
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
1998 Fairchild Semiconductor Corporation
Thermal Characteristics
T
A
= 25C unless otherwise noted
FFB2227A
SC70-6
Mark: .AA
Dot denotes pin #1
FMB2227A
This complementary device is for use as a medium power amplifier and
switch requiring collector currents up to 500 mA. Sourced from Process
19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.
Symbol
Characteristic
Max
Units
FFB2227A
FMB2227A
P
D
Total Device Dissipation
Derate above 25
C
300
2.4
700
5.6
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
415
180
C/W
SuperSOT
-6
Mark: .001
Dot denotes pin #1
C1
E1
C2
B1
E2
B2
pin #1
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
TRANSISTOR TYPE
C1 B1 E1 NPN
C2 B2 E2 PNP
FFB2227A / FMB2227A
Electrical Characteristics
T
A
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 50 mA, V
CE
= 20 V,
f = 100 MHz
250
MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 100 kHz
4.0
pF
C
ibo
Input Capacitance
V
EB
= 2.0 V, I
C
= 0, f = 100 kHz
12
pF
NF
Noise Figure
I
C
= 100
A, V
CE
= 10 V,
R
S
= 1.0 k
, f = 1.0 kHz
2.0
dB
SWITCHING CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
I
C
= 10 mA, I
B
= 0
30
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
CBO
Collector Cutoff Current
V
CB
= 50 V, I
E
= 0
30
nA
I
EBO
Emitter Cutoff Current
V
EB
= 3.0 V, I
C
= 0
30
nA
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 300mA, V
CE
= 10 V*
50
75
100
30
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 300 mA, I
B
= 30 mA
0.4
1.4
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage*
I
C
= 150 mA, I
B
= 15 mA
1.3
V
NPN & PNP General Purpose Amplifier
(continued)
t
on
Turn-on Time
V
CC
= 30 V, I
C
= 150 mA,
30
ns
t
d
Delay Time
I
B1
= 15 mA
8.0
ns
t
r
Rise Time
20
ns
t
off
Turn-off Time
V
CC
= 6.0 V, I
C
= 150 mA
80
ns
t
s
Storage Time
I
B1
= I
B2
= 15 mA
60
ns
t
f
Fall Time
20
ns
FFB2227A / FMB2227A
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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