FFB2907A / FMBT2907A / MMPQ2907A
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
60
V
V
CBO
Collector-Base Voltage
60
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
600
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Absolute Maximum Ratings*
T
A
= 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Discrete POWER & Signal
Technologies
1998 Fairchild Semiconductor Corporation
PNP Multi-Chip General Purpose Amplifier
Thermal Characteristics
T
A
= 25C unless otherwise noted
Symbol
Characteristic
Max
Units
FFB2907A
FMB2907A
MMPQ2907A
P
D
Total Device Dissipation
Derate above 25
C
300
2.4
700
5.6
1,000
8.0
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
415
180
125
240
C/W
C/W
C/W
FFB2907A
SC70-6
Mark: .2F
C1
B2
E2
E1
B1
C2
pin #1
FMB2907A
SuperSOT
TM
-6
Mark: .2F
C1
E1
C2
B1
E2
B2
pin #1
MMPQ2907A
SOIC-16
C1
C1
C2
C2
C3
C3
C4
C4
E1
B1
E2
B2
E3
B3
E4
B4
This device is designed for use as a general purpose amplifier and switch requiring
collector currents to 500 mA. Sourced from Process 63.
FFB2907A / FMBT2907A / MMPQ2907A
Electrical Characteristics
T
A
= 25C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 50 mA, V
CE
= 20 V,
f = 100 MHz
250
MHz
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0,
f = 100 kHz
6.0
pF
C
ibo
Input Capacitance
V
EB
= 2.0 V, I
C
= 0,
f = 100 kHz
12
pF
SWITCHING CHARACTERISTICS
t
on
Turn-on Time
V
CC
= 30 V, I
C
= 150 mA,
30
ns
t
d
Delay Time
I
B1
= 15 mA
8.0
ns
t
r
Rise Time
20
ns
t
off
Turn-off Time
V
CC
= 6.0 V, I
C
= 150 mA
80
ns
t
s
Storage Time
I
B1
= I
B2
= 15 mA
60
ns
t
f
Fall Time
20
ns
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
I
C
= 10 mA, I
B
= 0
60
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
60
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
5.0
V
I
B
Base Cutoff Current
V
CB
= 30 V, V
EB
= 0.5 V
50
nA
I
CEX
Collector Cutoff Current
V
CE
= 30 V, V
BE
= 0.5 V
50
nA
I
CBO
Collector Cutoff Current
V
CB
= 50 V, I
E
= 0
V
CB
= 50 V, I
E
= 0, T
A
= 125
C
0.02
20
A
A
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 500 mA, V
CE
= 10 V*
75
100
100
100
50
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.4
1.6
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA*
I
C
= 500 mA, I
B
= 50 mA
1.3
2.6
V
V
PNP Multi-Chip General Purpose Amplifier
(continued)
FFB2907A / FMBT2907A / MMPQ2907A
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1
0.3
1
3
10
30
100
300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICA
L PULSE
D CU
RRE
N
T
GA
IN
C
FE
125 C
25 C
- 40 C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA)
V
-
CO
LLEC
T
OR
EM
I
TTE
R V
O
L
T
A
G
E
(
V
)
C
CE
S
A
T
= 10
25 C
- 40 C
125 C
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
500
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
- BA
SE
EM
ITTE
R V
O
L
T
A
G
E
(V)
C
BE
S
A
T
25 C
- 40 C
125 C
= 10
Base Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
BA
SE
E
M
I
T
T
E
R
ON
VO
L
T
A
G
E (
V
)
C
BE
O
N
V = 5V
CE
25 C
- 40 C
125 C
Collector-Cutoff Current
vs. Ambient Temperature
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
CO
LLE
CT
O
R
CU
RREN
T (
n
A
)
A
CB
O
V = 35V
CB
Input and Output Capacitance
vs Reverse Bias Voltage
0.1
1
10
50
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CA
P
A
C
I
T
A
NCE (
p
F)
C ob
C
ib
PNP Multi-Chip General Purpose Amplifier
(continued)
FFB2907A / FMBT2907A / MMPQ2907A
Typical Characteristics
(continued)
Switching Times
vs Collector Current
10
100
1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
TI
ME
(n
S)
I = I =
t r
t
s
B1
C
B2
I
c
10
V = 15 V
cc
t f
t d
Turn On and Turn Off Times
vs Collector Current
10
100
1000
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
TI
ME
(n
S)
I = I =
t on
t
off
B1
C
B2
I
c
10
V = 15 V
cc
Rise Time vs Collector
and Turn On Base Currents
10
100
500
1
2
5
10
20
50
I - COLLECTOR CURRENT (mA)
I
-
TU
RN
0N B
A
SE C
URREN
T
(
m
A
)
30 ns
C
t = 15 V
r
B1
60 ns
PNP Multi-Chip General Purpose Amplifier
(continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
WER DISSIP
A
T
I
O
N
(
W
)
D
o
SOT-6
FFB2907A / FMBT2907A / MMPQ2907A
Test Circuits
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
1.0 K
- 6.0 V
15 V
1.0 K
- 30 V
0
200ns
200ns
- 16 V
0
50
200
1 K
37
50
30 V
PNP Multi-Chip General Purpose Amplifier
(continued)
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