2003 Fairchild Semiconductor Corporation
FGA15N120AND Rev. A
IGBT
FGA15N12
0AN
D
FGA15N120AND
General Description
Employing NPT technology, Fairchild's AND series of
IGBTs provides low conduction and switching losses. The
AND series offers solutions for applications such as
induction heating (IH), motor control, general purpose
inverters and uninterruptible power supplies (UPS).
Features
High speed switching
Low saturation voltage : V
CE(sat)
= 2.4 V @ I
C
= 15A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 210ns (typ.)
Absolute Maximum Ratings
T
C
= 25
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
FGA15N120AND
Units
V
CES
Collector-Emitter Voltage
1200
V
V
GES
Gate-Emitter Voltage
20
V
I
C
Collector Current
@ T
C
= 25
C
24
A
Collector Current
@ T
C
= 100
C
15
A
I
CM (1)
Pulsed Collector Current
45
A
I
F
Diode Continuous Forward Current
@ T
C
= 100
C
15
A
I
FM
Diode Maximum Forward Current
45
A
P
D
Maximum Power Dissipation
@ T
C
= 25
C
200
W
Maximum Power Dissipation
@ T
C
= 100
C
80
W
T
J
Operating Junction Temperature
-55 to +150
C
T
stg
Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds
300
C
Symbol
Parameter
Typ.
Max.
Units
R
JC
(IGBT)
Thermal Resistance, Junction-to-Case
--
0.63
C
/
W
R
JC
(DIODE)
Thermal Resistance, Junction-to-Case
--
2.88
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient
--
40
C
/
W
Applications
Induction Heating, UPS, AC & DC motor controls and general purpose inverters.
G
C
E
G
C
E
G C E
TO-3P
FGA15N120AND Rev. A
FGA15N12
0AN
D
2003 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
C unless otherwise noted
Electrical Characteristics of DIODE
T
C
= 25
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 3mA
1200
--
--
V
B
VCES
/
T
J
Temperature Coefficient of Breakdown
Voltage
V
GE
= 0V, I
C
= 3mA
--
0.6
--
V/
C
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
3
mA
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
100
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 15mA, V
CE
= V
GE
3.5
5.5
7.5
V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 15A
,
V
GE
= 15V
--
2.4
3.2
V
I
C
= 15A
,
V
GE
= 15V,
T
C
= 125
C
--
2.9
--
V
I
C
= 24A
,
V
GE
= 15V
--
3.0
--
V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
1150
--
pF
C
oes
Output Capacitance
--
120
--
pF
C
res
Reverse Transfer Capacitance
--
56
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 600 V, I
C
= 15A,
R
G
= 20
, V
GE
= 15V,
Inductive Load, T
C
= 25
C
--
90
--
ns
t
r
Rise Time
--
70
--
ns
t
d(off)
Turn-Off Delay Time
--
310
--
ns
t
f
Fall Time
--
60
120
ns
E
on
Turn-On Switching Loss
--
3.27
4.9
mJ
E
off
Turn-Off Switching Loss
--
0.6
0.9
mJ
E
ts
Total
Switching
Loss
--
3.68
5.8
mJ
t
d(on)
Turn-On Delay Time
V
CC
= 600 V, I
C
= 15A,
R
G
= 20
, V
GE
= 15V,
Inductive Load, T
C
= 125
C
--
80
--
ns
t
r
Rise Time
--
60
--
ns
t
d(off)
Turn-Off Delay Time
--
310
--
ns
t
f
Fall Time
--
50
--
ns
E
on
Turn-On Switching Loss
--
3.41
--
mJ
E
off
Turn-Off Switching Loss
--
0.84
--
mJ
E
ts
Total
Switching
Loss
--
4.25
--
mJ
Q
g
Total Gate Charge
V
CE
= 600 V, I
C
= 15A,
V
GE
= 15V
--
120
180
nC
Q
ge
Gate-Emitter Charge
--
9
14
nC
Q
gc
Gate-Collector Charge
--
63
95
nC
L
e
Internal Emitter Inductance
Measured 5mm from PKG
--
14
--
nH
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
FM
Diode Forward Voltage
I
F
= 15A
T
C
= 25
C
--
1.7
2.7
V
T
C
= 125
C
--
1.8
--
t
rr
Diode Reverse Recovery Time
I
F
= 15A
dI/dt = 200 A/
s
T
C
= 25
C
--
210
330
ns
T
C
= 125
C
--
280
--
I
rr
Diode Peak Reverse Recovery
Current
T
C
= 25
C
--
27
40
A
T
C
= 125
C
--
31
--
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
C
--
2835
6600
nC
T
C
= 125
C
--
4340
--
FGA15N120AND Rev. A
FGA15N12
0AN
D
2003 Fairchild Semiconductor Corporation
0
2
4
6
0
20
40
60
80
Common Emitter
V
GE
= 15V
T
C
= 25
T
C
= 125
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0
2
4
6
8
10
0
20
40
60
80
100
120
20V
17V
15V
12V
V
GE
= 10V
T
C
= 25
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
25
50
75
100
125
2.0
2.5
3.0
3.5
4.0
Common Emitter
V
GE
= 15V
24A
I
C
= 15A
Collector-Emitter Voltage, V
CE
[V]
Case Temperature, T
C
[
]
0.1
1
10
100
1000
0
10
20
30
Vcc = 600V
load Current : peak of square wave
Duty cycle : 50%
Tc = 100
Powe Dissipation = 40W
Load Current [A]
Frequency [kHz]
0
4
8
12
16
20
0
4
8
12
16
20
24A
15A
Common Emitter
T
C
= 25
I
C
= 7.5A
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
24A
15A
Common Emitter
T
C
= 125
I
C
= 7.5A
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
FGA15N120AND Rev. A
FGA15N12
0AN
D
2003 Fairchild Semiconductor Corporation
0
10
20
30
40
50
60
70
10
100
Common Emitter
V
CC
= 600V, V
GE
=
15V
I
C
= 15A
T
C
= 25
T
C
= 125
td(on)
tr
Switching Time [ns]
Gate Resistance, R
G
[
]
1
10
0
500
1000
1500
2000
2500
Ciss
Coss
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
Crss
Capacitance [pF]
Collector-Emitter Voltage, V
CE
[V]
Fig 7. Capacitance Characteristics
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
0
10
20
30
40
50
60
70
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
15V
I
C
= 15A
T
C
= 25
T
C
= 125
td(off)
tf
Sw
itching T
i
me [ns]
Gate Resistance, R
G
[
]
0
10
20
30
40
50
60
70
1
10
Common Emitter
V
CC
= 600V, V
GE
=
15V
I
C
= 15A
T
C
= 25
T
C
= 125
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, R
G
[
]
5
10
15
20
25
30
100
Common Emitter
V
GE
=
15V, R
G
= 20
T
C
= 25
T
C
= 125
tr
td(on)
Switching Time [ns]
Collector Current, I
C
[A]
5
10
15
20
25
30
100
1000
Common Emitter
V
GE
=
15V, R
G
= 20
T
C
= 25
T
C
= 125
td(off)
tf
Sw
itching T
i
me [ns]
Collector Current, I
C
[A]
Fig 8. Turn-On Characteristics vs. Gate
Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
FGA15N120AND Rev. A
FGA15N12
0AN
D
2003 Fairchild Semiconductor Corporation
1E-5
1E-4
1E-3
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
0.1
0.5
0.2
0.05
0.02
0.01
single pulse
T
hermal Response [Zthjc]
Rectangular Pulse Duration [sec]
0
20
40
60
80
100
120
0
2
4
6
8
10
12
14
16
600V
400V
Common Emitter
R
L
= 40
T
C
= 25
Vcc = 200V
Gate-Emitter Voltage, V
GE
[V]
Gate Charge, Q
g
[nC]
5
10
15
20
25
30
0.1
1
10
Common Emitter
V
GE
=
15V, R
G
= 20
T
C
= 25
T
C
= 125
Eon
Eoff
Sw
itching Loss [mJ]
Collector Current, I
C
[A]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
Fig 17. Transient Thermal Impedance of IGBT
Fig 13. Switching Loss vs. Collector Current
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
0.1
1
10
100
1000
0.01
0.1
1
10
100
50
s
100
s
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25
o
C
Curves must be derated
linearly with increase
in temperature
Collector Current, Ic [A]
Collector - Emitter Voltage, V
CE
[V]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 15V, T
C
= 125
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
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