2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA25N120ANTD Rev. B
F
G
A2
5N
12
0AN
T
D
1
2
0
0
V
NP
T
T
r
e
n
ch
I
G
BT
August 2005
FGA25N120ANTD
1200V NPT Trench IGBT
Features
NPT Trench Technology, Positive temperature coefficient
Low saturation voltage: V
CE(sat), typ
= 2.0V
@ I
C
= 25A and T
C
= 25
C
Low switching loss: E
off, typ
= 0.96mJ
@ I
C
= 25A and T
C
= 25
C
Extremely enhanced avalanche capability
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching
application such as induction heating, microwave oven, etc.
Absolute Maximum Ratings
Thermal Characteristics
G
C
E
G
C
E
G C E
TO-3P
Symbol
Description
FGA25N120ANTD
Units
V
CES
Collector-Emitter Voltage
1200
V
V
GES
Gate-Emitter Voltage
20
V
I
C
Collector Current
@ T
C
= 25
C
50
A
Collector Current
@ T
C
= 100
C
25
A
I
CM
Pulsed Collector Current
(Note 1)
75
A
I
F
Diode Continuous Forward Current
@ T
C
= 100
C
25
A
I
FM
Diode Maximum Forward Current
150
A
P
D
Maximum Power Dissipation
@ T
C
= 25
C
312
W
Maximum Power Dissipation
@ T
C
= 100
C
125
W
T
J
Operating Junction Temperature
-55 to +150
C
T
stg
Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds
300
C
Symbol
Parameter
Typ.
Max.
Units
R
JC
Thermal Resistance, Junction-to-Case for IGBT
--
0.4
C/W
R
JC
Thermal Resistance, Junction-to-Case for Diode
--
2.0
C/W
R
JA
Thermal Resistance, Junction-to-Ambient
--
40
C/W
2
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FGA25N120ANTD Rev. B
F
G
A2
5N
12
0AN
T
D
1
2
0
0
V
NP
T
T
r
e
n
ch
I
G
BT
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
T
C
= 25C unless otherwise noted
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGA25N120ANTD
FGA25N120ANTD
TO-3P
--
--
30
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
3
mA
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
250
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 25mA, V
CE
= V
GE
3.5
5.5
7.5
V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 25A
,
V
GE
= 15V
--
2.0
2.5
V
I
C
= 25A
,
V
GE
= 15V,
T
C
= 125
C
--
2.15
--
V
I
C
= 50A
,
V
GE
= 15V
--
2.65
--
V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
3700
--
pF
C
oes
Output Capacitance
--
130
--
pF
C
res
Reverse Transfer Capacitance
--
80
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 600 V, I
C
= 25A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 25
C
--
50
--
ns
t
r
Rise Time
--
60
90
ns
t
d(off)
Turn-Off Delay Time
--
190
--
ns
t
f
Fall Time
--
100
180
ns
E
on
Turn-On Switching Loss
--
4.1
6.2
mJ
E
off
Turn-Off Switching Loss
--
0.96
1.5
mJ
E
ts
Total
Switching
Loss
--
5.06
7.7
mJ
t
d(on)
Turn-On Delay Time
V
CC
= 600 V, I
C
= 25A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 125
C
--
50
--
ns
t
r
Rise Time
--
60
--
ns
t
d(off)
Turn-Off Delay Time
--
200
--
ns
t
f
Fall Time
--
154
--
ns
E
on
Turn-On Switching Loss
--
4.3
6.9
mJ
E
off
Turn-Off Switching Loss
--
1.5
2.4
mJ
E
ts
Total
Switching
Loss
--
5.8
9.3
mJ
Q
g
Total Gate Charge
V
CE
= 600 V, I
C
= 25A,
V
GE
= 15V
--
200
300
nC
Q
ge
Gate-Emitter Charge
--
15
23
nC
Q
gc
Gate-Collector Charge
--
100
150
nC
3
www.fairchildsemi.com
FGA25N120ANTD Rev. B
F
G
A2
5N
12
0AN
T
D
1
2
0
0
V
NP
T
T
r
e
n
ch
I
G
BT
Electrical Characteristics of DIODE
T
C
= 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
FM
Diode Forward Voltage
I
F
= 25A
T
C
= 25
C
--
2.0
3.0
V
T
C
= 125
C
--
2.1
--
t
rr
Diode Reverse Recovery Time
I
F
= 25A
dI/dt = 200 A/
s
T
C
= 25
C
--
235
350
ns
T
C
= 125
C
--
300
--
I
rr
Diode Peak Reverse Recovery Cur-
rent
T
C
= 25
C
--
27
40
A
T
C
= 125
C
--
31
--
Q
rr
Diode Reverse Recovery Charge
T
C
= 25
C
--
3130
4700
nC
T
C
= 125
C
--
4650
--
4
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FGA25N120ANTD Rev. B
F
G
A2
5N
12
0AN
T
D
1
2
0
0
V
NP
T
T
r
e
n
ch
I
G
BT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
Figure 3. Saturation Voltage vs. Case
Figure 4. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
0
1
2
3
4
5
0
20
40
60
80
100
120
Common Emitter
V
GE
= 15V
T
C
= 25
C
T
C
= 125
C
Coll
ector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0
2
4
6
8
10
0
20
40
60
80
100
120
140
160
180
10V
9V
8V
7V
20V
17V
15V 12V
V
GE
= 6V
T
C
= 25
C
Collector Cu
rrent, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
25
50
75
100
125
1.5
2.0
2.5
3.0
Common Emitter
V
GE
= 15V
40A
I
C
= 25A
Collecto
r-Emitter Voltage
, V
CE
[V]
Case Temperature, T
C
[
C]
0
4
8
12
16
20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= -40
C
I
C
= 12.5A
Collector-Emitter Voltage,
V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= 125
C
I
C
= 12.5A
Collector-Emitter Voltage,
V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= 25
C
I
C
= 12.5A
Collector-Emitter Voltage,
V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
5
www.fairchildsemi.com
FGA25N120ANTD Rev. B
F
G
A2
5N
12
0AN
T
D
1
2
0
0
V
NP
T
T
r
e
n
ch
I
G
BT
Typical Performance Characteristics
(Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Figure 9. Turn-Off Characteristics vs.
Figure 10. Switching Loss vs. Gate Resistance
Gate Resistance
Figure 11. Turn-On Characteristics vs.
Figure 12. Turn-Off Characteristics vs.
Collector Current
Collector Current
0
10
20
30
40
50
60
70
10
100
Common Emitter
V
CC
= 600V, V
GE
=
15V
I
C
= 25A
T
C
= 25
C
T
C
= 125
C
td(on)
tr
Sw
itching Time [ns]
Gate Resistance, R
G
[
]
1
10
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
Ciss
Coss
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
C
Crss
Capacitan
ce [pF]
Collector-Emitter Voltage, V
CE
[V]
0
10
20
30
40
50
60
70
1
10
Common Emitter
V
CC
= 600V, V
GE
=
15V
I
C
= 25A
T
C
= 25
C
T
C
= 125
C
Eon
Eoff
Switching Lo
ss [mJ]
Gate Resistance, R
G
[
]
0
10
20
30
40
50
60
70
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
=
15V
I
C
= 25A
T
C
= 25
C
T
C
= 125
C
td(off)
tf
Switching T
i
me [ns]
Gate Resistance, R
G
[
]
10
20
30
40
50
100
Common Emitter
V
GE
=
15V, R
G
= 10
T
C
= 25
C
T
C
= 125
C
tr
td(on)
Switching T
i
me [ns]
Collector Current, I
C
[A]
10
20
30
40
50
100
Common Emitter
V
GE
=
15V, R
G
= 10
T
C
= 25
C
T
C
= 125
C
td(off)
tf
Switching T
i
me [ns]
Collector Current, I
C
[A]
6
www.fairchildsemi.com
FGA25N120ANTD Rev. B
F
G
A2
5N
12
0AN
T
D
1
2
0
0
V
NP
T
T
r
e
n
ch
I
G
BT
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
Figure 15. SOA Characteristics
Figure 16. Turn-Off SOA
Figure 17. Transient Thermal Impedance of IGBT
10
20
30
40
50
0.1
1
10
Common Emitter
V
GE
=
15V, R
G
= 10
T
C
= 25
C
T
C
= 125
C
Eon
Eoff
Switching L
o
ss [mJ]
Collector Current, I
C
[A]
0
20
40
60
80
100 120
140
160
180
200
0
2
4
6
8
10
12
14
16
600V
400V
Common Emitter
R
L
= 24
T
C
= 25
C
Vcc = 200V
Gate-Emitter V
o
ltage, V
GE
[V]
Gate Charge, Q
g
[nC]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 15V, T
C
= 125
C
Collector Cu
rrent, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0.1
1
10
100
1000
0.01
0.1
1
10
100
50
s
100
s
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse T
C
= 25
C
Curves must be derated
linearly with increase
in temperature
Coll
ector Current, Ic
[A]
Collector - Emitter Voltage, V
CE
[V]
1 E - 5
1 E - 4
1 E - 3
0 . 0 1
0 . 1
1
1 0
1 E - 3
0 . 0 1
0 . 1
1
1 0
0.1
0.5
0.2
0.05
0.02
0.01
single pulse
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
[
Z
t
h
j
c
]
R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
7
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FGA25N120ANTD Rev. B
F
G
A2
5N
12
0AN
T
D
1
2
0
0
V
NP
T
T
r
e
n
ch
I
G
BT
Typical Performance Characteristics
(Continued)
Figure 18. Forward Characteristics
Figure 19. Reverse Recovery Current
Figure 20. Stored Charge
Figure 21. Reverse Recovery Time
0.1
1
10
50
0.0
0.4
0.8
1.2
1.6
2.0
T
C
= 125
C
T
C
= 25
C
T
J
= 25
C
T
J
= 125
C
Forward Voltage , V
F
[V]
Fo
rw
a
r
d C
u
rren
t
, I
F
[A
]
5
10
15
20
25
0
5
10
15
20
25
30
di/dt = 100A/
s
di/dt = 200A/
s
R
e
ve
rse
R
e
c
o
ve
ry C
u
rrn
et ,
I
rr
[A
]
Forward Current , I
F
[A]
5
10
15
20
25
0
100
200
300
di/dt = 100A/s
di/dt = 200A/s
Re
v
e
r
s
e
Re
c
o
v
e
ry
T
i
m
e
,
t
rr
[ns
]
Forward Current , I
F
[A]
5
10
15
20
25
0
1000
2000
3000
4000
di/dt = 100A/
s
di/dt = 200A/
s
Stored Recov
e
ry Charge , Q
rr
[nC]
Forward Current , I
F
[A]
8
www.fairchildsemi.com
FGA25N120ANTD Rev. B
F
G
A2
5N
12
0AN
T
D
1
2
0
0
V
NP
T
T
r
e
n
ch
I
G
BT
Mechanical Dimensions
TO-3P
15.60
0.20
4.80
0.20
13.60
0.20
9.60
0.20
2.00
0.20
3.00
0.20
1.00
0.20
1.40
0.20
3.20
0.10
3.80
0.20
13.90
0.20
3.50
0.20
16.50
0.30
12.76
0.20
19.90
0.20
23.40
0.20
18.70
0.20
1.50
+0.15
0.05
0.60
+0.15
0.05
5.45TYP
[5.45
0.30
]
5.45TYP
[5.45
0.30
]
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
F
G
A2
5N
12
0AN
T
D
1
2
0
0
V
NP
T
T
r
e
n
ch
I
G
BT
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
FAST
FASTrTM
FPSTM
FRFETTM
GlobalOptoisolatorTM
GTOTM
HiSeCTM
I
2
CTM
i-LoTM
ImpliedDisconnectTM
IntelliMAXTM
ISOPLANARTM
LittleFETTM
MICROCOUPLERTM
MicroFETTM
MicroPakTM
MICROWIRETM
MSXTM
MSXProTM
OCXTM
OCXProTM
OPTOLOGIC
OPTOPLANARTM
PACMANTM
POPTM
Power247TM
PowerEdgeTM
PowerSaverTM
PowerTrench
QFET
QSTM
QT OptoelectronicsTM
Quiet SeriesTM
RapidConfigureTM
RapidConnectTM
SerDesTM
SILENT SWITCHER
SMART STARTTM
SPMTM
StealthTM
SuperFETTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SyncFETTM
TinyLogic
TINYOPTOTM
TruTranslationTM
UHCTM
UltraFET
UniFETTM
VCXTM
WireTM
ACExTM
ActiveArrayTM
BottomlessTM
Build it NowTM
CoolFETTM
CROSSVOLTTM
DOMETM
EcoSPARKTM
E
2
CMOSTM
EnSignaTM
FACTTM
FACT Quiet SeriesTM
Across the board. Around the world.TM
The Power Franchise
Programmable Active DroopTM
Rev. I16
9
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FGA25N120ANTD Rev. B
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