2003 Fairchild Semiconductor Corporation
August 2003
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S
2 /
F
G
P20N6S2
/
FGB20N6S
2
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Formerly Developmental Type TA49330.
Features
100kHz Operation at 390V, 7A
200kHZ Operation at 390V, 5A
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . 85ns at TJ = 125
o
C
Low Gate Charge . . . . . . . . . 30nC at V
GE
= 15V
Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical
UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
Low Conduction Loss
Low E
on
Device Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
Ratings
Units
BV
CES
Collector to Emitter Breakdown Voltage
600
V
I
C25
Collector Current Continuous, T
C
= 25C
28
A
I
C110
Collector Current Continuous, T
C
= 110C
13
A
I
CM
Collector Current Pulsed (Note 1)
40
A
V
GES
Gate to Emitter Voltage Continuous
20
V
V
GEM
Gate to Emitter Voltage Pulsed
30
V
SSOA
Switching Safe Operating Area at T
J
= 150C, Figure 2
35 at 600V
A
E
AS
Pulsed Avalanche Energy, I
CE
= 7.0A, L = 4mH, V
DD
= 50V
100
mJ
E
ARV
Pulsed Avalanche Energy, I
CE
= 7.0A, L = 4mH, V
DD
= 50V
100
mJ
P
D
Power Dissipation Total T
C
= 25C
125
W
Power Dissipation Derating T
C
> 25C
1.0
W/C
T
J
Operating Junction Temperature Range
-55 to 150
C
T
STG
Storage Junction Temperature Range
-55 to 150
C
CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Package
Symbol
C
E
G
TO-247
E
C
G
TO-263AB
TO-220AB
E
C
G
E
G
COLLECTOR
(Flange)
COLLECTOR
(Back-Metal)
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S
2 /
F
G
P20N6S2
/
FGB20N6S
2
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
20N6S2
FGH20N6S2
TO-247
Tube
N/A
30 Units
20N6S2
FGP20N6S2
TO-220AB
Tube
N/A
50 Units
20N6S2
FGB20N6S2
TO-263AB
Tube
N/A
50 Units
20N6S2
FGB20N6S2T
TO-263AB
330mm
24mm
800 Units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BV
CES
Collector to Emitter Breakdown Voltage I
C
= 250
A, V
GE
= 0
600
-
-
V
BV
ECS
Emitter to Collector Breakdown Voltage I
C
= -10mA, V
GE
= 0
20
-
-
V
I
CES
Collector to Emitter Leakage Current
V
CE
= 600V
T
J
= 25C
-
-
250
A
T
J
= 125C
-
-
2.0
mA
I
GES
Gate to Emitter Leakage Current
V
GE
= 20V
-
-
250
nA
V
CE(SAT)
Collector to Emitter Saturation Voltage I
C
= 7.0A,
V
GE
= 15V
T
J
= 25C
-
2.2
2.7
V
T
J
= 125C
-
1.9
2.2
V
Q
G(ON)
Gate Charge
I
C
= 7.0A,
V
CE
= 300V
V
GE
= 15V
-
30
36
nC
V
GE
= 20V
-
38
45
nC
V
GE(TH)
Gate to Emitter Threshold Voltage
I
C
= 250
A, V
CE
= 600V
3.5
4.3
5.0
V
V
GEP
Gate to Emitter Plateau Voltage
I
C
= 7.0A, V
CE
= 300V
-
6.5
8.0
V
SSOA
Switching SOA
T
J
= 150C, R
G
= 25
,
V
GE
=
15V , L = 0.5mH, Vce = 600V
35
-
-
A
t
d(ON)I
Current Turn-On Delay Time
IGBT and Diode at T
J
= 25C,
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25
L = 0.5mH
Test Circuit - Figure 20
-
7.7
-
ns
t
rI
Current Rise Time
-
4.5
-
ns
t
d(OFF)I
Current Turn-Off Delay Time
-
87
-
ns
t
fI
Current Fall Time
-
50
-
ns
E
ON1
Turn-On Energy (Note 1)
-
25
-
J
E
ON2
Turn-On Energy (Note 1)
-
85
-
J
E
OFF
Turn-Off Energy (Note 2)
-
58
75
J
t
d(ON)I
Current Turn-On Delay Time
IGBT and Diode at T
J
= 125C,
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25
L = 0.5mH
Test Circuit - Figure 20
-
7
-
ns
t
rI
Current Rise Time
-
4.5
-
ns
t
d(OFF)I
Current Turn-Off Delay Time
-
120
145
ns
t
fI
Current Fall Time
-
85
105
ns
E
ON1
Turn-On Energy (Note 1)
-
20
-
J
E
ON2
Turn-On Energy (Note 1)
-
125
140
J
E
OFF
Turn-Off Energy (Note 2)
-
135
180
J
R
JC
Thermal Resistance Junction-Case
-
-
1.0
C/W
NOTE:
1.
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss
of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 20.
2.
Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S
2 /
F
G
P20N6S2
/
FGB20N6S
2
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COL
L
ECT
O
R CURRENT
(
A
)
50
5
0
10
25
75
100
125
150
30
20
15
25
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
CE
, CO
L
L
E
CT
O
R
T
O
EM
IT
T
E
R CURRE
NT
(
A
)
300
400
200
100
500
600
0
20
30
15
40
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 500
H
5
10
35
25
f
MA
X
, OP
E
R
A
T
ING F
R
E
Q
UE
NCY
(kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
400
20
10
700
100
T
J
= 125
o
C, R
G
= 25
, L = 500
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
JC
= 0.27
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
V
GE
= 15V
T
C =
75
o
C
V
GE
= 10V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK S
H
OR
T
CIRCUIT
CURRENT
(
A
)
t
SC
,
S
H
OR
T
CIRCUIT
WIT
H
S
T
AND T
I
M
E
(
s)
9
11
12
10
6
90
150
13
14
12
8
60
120
180
210
10
15
4
2
t
SC
I
SC
V
CE
= 390V, R
G
= 25
, T
J
= 125
o
C
0.50
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COL
L
ECT
O
R T
O
EM
IT
T
E
R CURRE
NT
(
A
)
0
2
4
1.25
2.0
2.25
8
6
14
T
J
= 25
o
C
0.75
T
J
= 150
o
C
12
1.5
1.75
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
GE
= 15V
T
J
= 125
o
C
10
2.5
2.75
I
CE
, COL
L
ECT
O
R T
O
EM
IT
T
E
R CURRE
NT
(
A
)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0.50
1.0
1.5
2.0
2.5
0.75
T
J
= 150
o
C
1.75
1.25
T
J
= 25
o
C
2.25
0
2
4
8
6
14
12
10
T
J
= 125
o
C
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
GE
= 10V
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S
2 /
F
G
P20N6S2
/
FGB20N6S
2
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves
(Continued)
E
ON
2
, T
URN
-
O
N E
N
E
R
GY
L
O
S
S
(
J)
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
200
0
400
2
4
6
8
10
14
0
300
250
350
50
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
12
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 25
, L = 500
H, V
CE
= 390V
E
OF
F
T
URN-
O
F
F
E
N
ERGY L
O
SS (
J)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
2
4
6
8
10
14
0
12
150
100
200
0
350
300
250
50
R
G
= 25
, L = 500
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(O
N
)I
,
T
URN-
ON DEL
A
Y
T
I
M
E
(
n
s
)
6
7
8
9
10
2
4
6
8
10
14
0
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
11
12
13
12
R
G
= 25
, L = 500
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
,
R
IS
E
T
I
ME
(n
s)
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
2
4
6
8
10
14
0
12
0
5
10
15
20
25
30
35
R
G
= 25
, L = 500
H, V
CE
= 390V
80
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(
O
F
F)
I
, T
URN-
OF
F
DE
L
A
Y T
I
M
E
(
n
s
)
140
120
100
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
2
4
6
8
10
14
0
12
R
G
= 25
, L = 500
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
,
F
A
LL
TI
M
E
(
n
s
)
T
J
= 25
o
C, V
GE
= 10V or 15V
T
J
= 125
o
C, V
GE
= 10V or 15V
2
4
6
8
10
14
0
12
60
40
120
100
80
R
G
= 25
, L = 500
H, V
CE
= 390V
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S
2 /
F
G
P20N6S2
/
FGB20N6S
2
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
(Continued)
I
CE
, COL
L
E
C
T
O
R T
O
E
M
IT
T
E
R CURRENT
(
A
)
0
20
40
V
GE
, GATE TO EMITTER VOLTAGE (V)
60
120
T
J
= 125
o
C
T
J
= -55
o
C
100
80
T
J
= 25
o
C
PULSE DURATION = 250
s
DUTY CYCLE < 0.5%, V
CE
= 10V
6
8
10
12
14
16
4
V
GE
, GA
T
E
T
O
E
M
I
T
T
E
R V
O
L
T
A
GE
(V
)
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 1mA, R
L
= 42.6
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 600V
V
CE
= 400V
5
10
15
20
25
35
0
30
6
4
8
0
16
12
10
14
2
T
C
, CASE TEMPERATURE (
o
C)
E
TO
T
A
L
, T
O
T
A
L
S
W
IT
CHING E
N
E
R
GY
L
O
S
S
(
m
J)
R
G
= 25
, L = 500
H, V
CE
= 390V, V
GE
= 15V
I
CE
= 14A
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 7A
I
CE
= 3A
0.2
0
0.8
0.6
0.4
50
25
75
100
125
150
R
G
, GATE RESISTANCE (
)
E
TO
T
A
L
, T
O
T
A
L
S
W
IT
CHING E
N
E
R
GY
L
O
S
S
(
m
J)
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500
H, V
CE
= 390V, V
GE
= 15V
0.1
0.05
10
1
I
CE
= 14A
1
10
100
1000
I
CE
= 7A
I
CE
= 3A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAP
A
C
IT
ANC
E (
n
F
)
C
RES
0
10
20
30
40
50
0.0
0.4
1.2
0.8
FREQUENCY = 1MHz
C
OES
C
IES
60
70
80
90
100
0.2
0.6
1.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
2.0
9
2.2
2.6
2.4
8
10
11
12
16
2.8
V
CE
, CO
L
L
E
CT
OR T
O
E
M
IT
T
E
R V
O
L
T
A
GE
(V
)
PULSE DURATION = 250
s, T
J
= 25
o
C
3.6
7
13
14
15
DUTY CYCLE < 0.5%
I
CE
= 14A
5
I
CE
= 3A
I
CE
= 7A
3.0
3.2
3.4
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S
2 /
F
G
P20N6S2
/
FGB20N6S
2
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Typical Performance Curves
(Continued)
t
1
, RECTANGULAR PULSE DURATION (s)
Z
JC
,
N
O
R
MAL
I
Z
E
D T
H
ERMAL
RESPO
NSE
10
-2
10
-1
10
0
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
0.10
t
1
t
2
P
D
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
JC
X R
JC
) + T
C
SINGLE PULSE
0.50
0.20
0.05
0.02
0.01
Test Circuit and Waveforms
Figure 20. Inductive Switching Test Circuit
Figure 21. Switching Test Waveforms
R
G
= 25
L = 500
H
V
DD
= 390V
+
-
FGH20N6S2D
DIODE TA49469
FGH20N6S2
t
fI
t
d(OFF)I
t
rI
t
d(ON)I
10%
90%
10%
90%
V
CE
I
CE
V
GE
E
OFF
E
ON2
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
FGH20N6S
2 /
F
G
P20N6S2
/
FGB20N6S
2
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic
discharge of energy through the devices. When
handling these devices, care should be exercised to
assure that the static charge built in the handler's
body capacitance is not discharged through the
device. With proper handling and application
procedures, however, IGBTs are currently being
extensively used in production by numerous
equipment manufacturers in military, industrial and
consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can
be handled safely if the following basic precautions
are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conduc-
tive material such as "ECCOSORBDTM LD26" or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be
grounded by any suitable means - for example,
with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-
voltage rating of V
GEM
. Exceeding the rated V
GE
can result in permanent damage to the oxide
layer in the gate region.
6. Gate Termination - The gates of these devices
are essentially capacitors. Circuits that leave the
gate open-circuited or floating should be avoided.
These conditions can result in turn-on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating
device performance for a specific application. Other
typical frequency vs collector current (I
CE
) plots are
possible using the information shown for a typical
unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows
f
MAX1
or f
MAX2
; whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
).
Deadtime (the denominator) has been arbitrarily held
to 10% of the on-state time for a 50% duty factor.
Other definitions are possible. t
d(OFF)I
and t
d(ON)I
are
defined in Figure 21. Device turn-off delay can
establish an additional frequency limiting condition
for an application other than T
JM
. t
d(OFF)I
is important
when controlling output ripple under a lightly loaded
condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/(E
OFF
+ E
ON2
).
The allowable dissipation (P
D
) is defined by
P
D
= (T
JM
- T
C
)/R
JC
. The sum of device switching
and conduction losses must not exceed P
D
. A 50%
duty factor was used (Figure 3) and the conduction
losses (P
C
) are approximated by P
C
= (V
CE
x I
CE
)/2.
E
ON2
and E
OFF
are defined in the switching
waveforms shown in Figure 21. E
ON2
is the integral
of the instantaneous power loss (I
CE
x V
CE
) during
turn-on and E
OFF
is the integral of the instantaneous
power loss (I
CE
x V
CE
) during turn-off. All tail losses
are included in the calculation for E
OFF
; i.e., the
collector current equals zero (I
CE
= 0)
ECCOSORBD
is a Trademark of Emerson and Cumming, Inc.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
LittleFETTM
MICROCOUPLERTM
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I
2
CTM
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2
CMOS
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