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Электронный компонент: FJA4213

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2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
FJA421
3
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test : PW=20us
*h
FE
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
-230
V
V
CEO
Collector-Emitter Voltage
-230
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-15
A
I
B
Base Current
-1.5
A
P
C
Collector Dissipation (T
C
=25
C)
130
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 50 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=-5mA, I
E
=0
-230
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=-10mA, R
BE
=
-230
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=-5mA, I
C
=0
-5
V
I
CBO
Collector Cut-off Current
V
CB
=-230V, I
E
=0
-5.0
A
I
EBO
Emitter Cut-off Current
V
EB
=-5V, I
C
=0
-5.0
A
h
FE1
* DC Current Gain
V
CE
=-5V, I
C
=-1A
55
160
h
FE2
DC Current Gain
V
CE
=-5V, I
C
=-7A
35
60
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=-8A, I
B
=-0.8A
-0.4
-3.0
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
=-5V, I
C
=-7A
-1.0
-1.5
V
f
T
Current Gain Bandwidth Product
V
CE
=-5V, I
C
=-1A
30
MHz
C
ob
Output Capacitance
V
CB
=-10V, f=1MHz
360
pF
Classification
R
O
h
FE1
55 ~ 110
80 ~ 160
1.Base 2.Collector 3.Emitter
FJA4213
Audio Power Amplifier
High Current Capability I
C
= -15A
High Power Dissipation
Wide S.O.A
Complement to FJA4313
TO-3P
1
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2003 Fairchild Semiconductor Corporation
FJA421
3
Rev. A, March 2003
Typical Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage
Figure 6. Safe Operating Area
-0
-2
-4
-6
-8
-10
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
I
B
= -500mA
I
B
= -600mA
I
B
= -400mA
I
B
= -700mA
I
B
= -300mA
I
B
= -900mA
I
B
= -200mA
I
B
= -800mA
I
B
= -1A
I
B
= -100mA
I
C
[
m
A]
,
COL
L
E
CT
OR
CURRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1
10
1
10
100
V
CE
= -5V
Tj = -25
o
C
Tj = 25
o
C
Tj = 125
o
C
h
FE
,
DC
CUR
RENT
G
A
I
N
I
C
[A], COLLECTOR CURRENT
0.01
0.1
1
10
100
10
100
1000
10000
Ic=-10Ib
Tj=-25
Tj=25
Tj=125
Vbe
(
s
a
t
)
[
m
V]
,
SA
TUR
A
TI
O
N
V
O
L
T
A
G
E
Ic[A], COLLECTOR CURRENT
0.01
0.1
1
10
100
1
10
100
1000
10000
Ic=-10Ib
Tj=-25
Tj=25
Tj=125
Vc
e
(
s
a
t
)
[
m
V]
,
SATU
R
A
TI
O
N
VO
LTAG
E
Ic[A], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
2
4
6
8
10
12
14
V
CE
= 5V
I
C
[
A
]
,
C
O
LLE
CT
O
R

CU
RR
E
N
T
V
BE
[V], BASE-EMITTER VOLTAGE
1
10
100
-0.01
-0.1
-1
-10
-100
*SINGLE NONREPETITIVE
PULSE T
C
=25[
o
C]
10ms*
100ms*
DC
I
C
MAX. (Pulsed*)
I
C
MAX. (DC)
I
C

[
A
]
,
CO
L
L
EC
TO
R CU
RRE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
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2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
FJA421
3
Typical Characteristics
Figure 7. Power Derating
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
140
160
P
C
[
W
]
,
POW
E
R
DI
SSI
PAT
ION
T
C
[
o
C], CASE TEMPERATURE
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Package Dimensions
FJA421
3
Dimensions in Millimeters
2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
15.60
0.20
4.80
0.20
13.60
0.20
9.60
0.20
2.00
0.20
3.00
0.20
1.00
0.20
1.40
0.20
3.20
0.10
3.80
0.20
13.90
0.20
3.50
0.20
16.50
0.30
12.76
0.20
19.90
0.20
23.40
0.20
18.70
0.20
1.50
+0.15
0.05
0.60
+0.15
0.05
5.45TYP
[5.45
0.30
]
5.45TYP
[5.45
0.30
]
TO-3P
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2003 Fairchild Semiconductor Corporation
Rev. I2
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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