2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
FJAF4310
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
C unless otherwise noted
Electrical Characteristics
T
C
=25
C unless otherwise noted
* Pulse Test : PW=20
s
h
FE
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
200
V
V
CEO
Collector-Emitter Voltage
140
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current (DC)
10
A
I
B
Base Current (DC)
1.5
A
P
C
Collector Dissipation (T
C
=25
C)
80
W
R
JC
Junction to Case
1.48
C/W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 55 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
=5mA, I
E
=0
200
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
=50mA, R
BE
=
140
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
=5mA, I
C
=0
6
V
I
CBO
Collector Cut-off Current
V
CB
=200V, I
E
=0
10
A
I
EBO
Emitter Cut-off Current
V
EB
=6V, I
C
=0
10
A
h
FE
*
DC Current Gain
V
CE
=4V, I
C
=3A
50
180
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=5A, I
B
=0.5A
0.5
V
C
ob
Output Capacitance
V
CB
=10V, f=1MHz
250
pF
f
T
Current Gain Bandwidth Product
V
CE
=5V, I
C
=1A
30
MHz
Classification
R
O
Y
h
FE
50 ~ 100
70 ~ 140
90 ~ 180
FJAF4310
Audio Power Amplifier
High Current Capability : I
C
=10A
High Power Dissipation
Wide S.O.A
Complement to FJAF4210
TO-3PF
1.Base 2.Collector 3.Emitter
1
2002 Fairchild Semiconductor Corporation
FJAF4310
Rev. A, November 2002
Typical Characteristics
Figure 1. Static Characterstic
Figure 2. DC current Gain
Figure 3. V
CE
(sat) vs. I
B
Characteristics
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage
Figure 6. Forward Bias Safe Operating Area
0
1
2
3
4
0
1
2
3
4
5
6
7
8
9
10
I
B
= 400mA
I
B
= 300mA
I
B
= 20mA
I
B
= 250mA
I
B
= 200mA
I
B
= 150mA
I
B
= 100mA
I
B
= 50mA
I
C
[
A
]
,
CO
L
L
E
C
T
O
R
CUR
RE
NT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
10
100
1000
V
CE
= 4 V
Ta = 25
o
C
Ta = 125
o
C
Ta = - 25
o
C
h
FE
, DC
CU
R
R
E
N
T
G
A
IN
I
C
[A], COLLECTOR CURRENT
0.0
0.4
0.8
1.2
1.6
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
C
= - 10A
I
C
= - 5A
V
CE
(sa
t
)
[V
], S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
I
B
[A], BASE CURRENT
0.01
0.1
1
10
0.01
0.1
1
I
C
= 10 I
B
Ta = 25
o
C
Ta = 125
o
C
Ta = - 25
o
C
V
CE
(sa
t
)
[V
], S
A
T
U
R
A
T
I
O
N
V
O
LT
A
G
E
I
C
[A], COLLECTOR CURRENT
0.0
0.5
1.0
1.5
0
2
4
6
8
10
V
CE
= 4 V
Ta = 25
o
C
Ta = 125
o
C
Ta = - 25
o
C
I
C
[A], CO
L
L
E
C
T
O
R
CU
R
R
E
N
T
V
BE
[V], Base-Emitter On VOLTAGE
0.1
1
10
100
0.1
1
10
t=100ms
t=10ms
T
C
=25
Single Pulse
I
C
(DC)
I
C
(Pulse)
Ic
[A], C
O
L
L
E
C
T
OR
C
U
R
R
EN
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
2002 Fairchild Semiconductor Corporation
Rev. I1
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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