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2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FJD5304D Rev. A
FJD5304D Hig
h
V
o
lt
age
Fast Switching T
r
ansisto
r
FJD5304D
High Voltage Fast Switching Transistor
Features
Built-in Free Wheeling Diode
Wide Safe Operating Area
Small Variance in Storage Time
Suitable for Electronic Ballast Application
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
* Pulse Test: PW = 300
s, Duty Cycle = 2% Pulsed
Package Marking and Ordering Information
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
700
V
V
CEO
Collector-Emitter Voltage
400
V
V
EBO
Emitter-Base Voltage
12
V
I
C
Collector Current (DC)
4
A
I
CP
* Collector Current (Pulse)
8
A
I
B
Base Current (DC)
2
A
I
BP
* Base Current (Pulse)
4
A
P
C
Collector Dissipation (T
C
= 25
C)
30
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-55 ~ 150
C
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
J5304D
FJD5304DTM
D-PAK
13" Dia
-
2500
J5304D
FJD5304DTF
D-PAK
13" Dia
-
2000
C
B
E
Equivalent Circuit
1. Base 2. Collector 3. Emitter
D-PACK
1
2
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FJD5304D Rev. A
FJD5304D Hig
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Fast Switching T
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Electrical Characteristics
T
C
= 25C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 1mA, I
E
= 0
700
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= 5mA, I
B
= 0
400
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA, I
C
= 0
12
V
I
CES
Collector Cut-off Current
V
CB
= 700V, I
E
= 0
100
A
I
CEO
Collector Cut-off Current
V
CB
= 400V, I
B
= 0
250
A
I
EBO
Emitter Cut-off Current
V
EB
= 12V, I
C
= 0
1
mA
h
FE
DC Current Gain
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 2.0A
10
8
40
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 0.5A, I
B
= 0.1A
0.7
V
I
C
= 1.0A, I
B
= 0.2A
1.0
V
I
C
= 2.5A, I
B
= 0.5A
1.5
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 0.5A, I
B
= 0.1A
1.1
V
I
C
= 1.0A, I
B
= 0.2A
1.2
V
I
C
= 2.5A, I
B
= 0.5A
1.3
V
t
STG
Storage Time
V
CLAMP
=200V, I
C
=2.0A
I
B1
=0.4A, V
BE
(off)=-5V, L=200
H
0.6
s
t
F
Fall Time
0.1
s
t
STG
Storage Time
V
CC
=250V, I
C
=2.0A
I
B1
=0.4A, I
B2
=-0.4A, T
P
=30
s
2.9
s
t
F
Fall Time
0.2
s
3
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FJD5304D Rev. A
FJD5304D Hig
h
V
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Fast Switching T
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ansisto
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Typical Performance Characteristics
Figure 1. Static Characterstic
Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
Figure 5. Resistive Load Switching Time
Figure 6. Forward Biased Safe Operating Area
0
2
4
6
8
10
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
B
=300mA
I
B
=150mA
I
B
=100mA
I
C
[A],
CO
L
L
E
CT
OR
CURR
E
N
T
V
CE
[V]. COLLECTOR-EMITTER VOLTAGE
I
B
=50mA
0.01
0.1
1
10
1
10
100
T
C
= - 25
o
C
T
C
=25
o
C
h
FE
,
DC CURRENT
G
A
I
N
I
C
[A], COLLECTOR CURRENT
T
C
=125
o
C
0.01
0.1
1
10
0.01
0.1
1
10
T
C
= - 25
o
C
T
C
=25
o
C
T
C
=125
o
C
V
CE
(sat) [V],
S
ATURAT
IO
N VO
LT
AG
E
I
C
[A], COLLECTOR CURRENT
I
C
= 5 I
B
0.01
0.1
1
10
0.1
1
10
T
C
= - 25
o
C
T
C
=25
o
C
T
C
=125
o
C
V
BE
(sat) [V],
S
ATURAT
IO
N VO
LT
AG
E
I
C
[A], COLLECTOR CURRENT
I
C
= 5 I
B
0.1
1
10
0.01
0.1
1
10
t
F
t
ST
G
&
t
F
[
s],
S
W
IT
CHING
TI
ME
I
C
[A], COLLECTOR CURRENT
V
CC
=250V
I
C
= 5 I
B1
= - 5 I
B2
t
STG
1
10
100
1000
0.01
0.1
1
10
100
1
s
10
s
Pulse I
C_MAX
I
C
[
A
],
CO
LL
ECT
O
R CURRE
N
T
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
= 25
o
C
Single Pulse
DC I
C_MAX
1ms
4
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FJD5304D Rev. A
FJD5304D Hig
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age
Fast Switching T
r
ansisto
r
Typical Performance Characteristics
(Continued)
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Power Derating Curve
0
100
200
300
400
500
600
700
800
900
1000
0
1
2
3
4
5
6
7
8
9
10
I
C
[
A
]
,
COL
L
E
CT
O
R
CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Vcc=50V, L = 1mH
I
B1
=1A, I
B2
= -1A
0
25
50
75
100
125
150
0
20
40
P
C
[W
]
,
COLL
E
C
TOR POW
E
R
DISSIPATIO
N
T
C
[
o
C], CASE TEMPERATURE
5
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FJD5304D Rev. A
FJD5304D Hig
h
V
o
lt
age
Fast Switching T
r
ansisto
r
Mechanical Dimensions
Dimensions in Millimeters
D-PAK
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